FQPF9N50CT. Аналоги и основные параметры

Наименование производителя: FQPF9N50CT

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 44 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 500 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 9 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 65 ns

Cossⓘ - Выходная емкость: 130 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.8 Ohm

Тип корпуса: TO-220F

Аналог (замена) для FQPF9N50CT

- подборⓘ MOSFET транзистора по параметрам

 

FQPF9N50CT даташит

 ..1. Size:844K  fairchild semi
 fqpf9n50ct fqpf9n50cydtu.pdf pdf_icon

FQPF9N50CT

TM QFET FQP9N50C/FQPF9N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 9 A, 500V, RDS(on) = 0.8 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 28 nC) planar stripe, DMOS technology. Low Crss ( typical 24 pF) This advanced technology has been especially tailored to

 5.1. Size:765K  fairchild semi
 fqpf9n50cf.pdf pdf_icon

FQPF9N50CT

December 2005 TM FRFET FQPF9N50CF 500V N-Channel MOSFET Features Description 9A, 500V, RDS(on) = 0.85 @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low gate charge (typical 28 nC) DMOS technology. Low Crss (typical 24pF) This advanced technology has been especially tailored to

 5.2. Size:845K  fairchild semi
 fqp9n50c fqpf9n50c.pdf pdf_icon

FQPF9N50CT

TM QFET FQP9N50C/FQPF9N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 9 A, 500V, RDS(on) = 0.8 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 28 nC) planar stripe, DMOS technology. Low Crss ( typical 24 pF) This advanced technology has been especially tailored to

 5.3. Size:770K  fairchild semi
 fqpf9n50c.pdf pdf_icon

FQPF9N50CT

November 2013 FQPF9N50C N-Channel QFET MOSFET 500 V, 9 A, 800 m Description Features These N-Channel enhancement mode power field effect 9 A, 500 V, RDS(on) = 800 m (Max.) @ VGS = 10 V, transistors are produced using Fairchild s proprietary, ID = 4.5 A planar stripe, DMOS technology. This advanced Low Gate Charge (Typ. 28 nC) technology has been especially tailored to m

ПОКАЗАТЬ ЕЩЁ

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