FQPF9N50T - Даташиты. Аналоги. Основные параметры
Наименование производителя: FQPF9N50T
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 50 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 5.3 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 95 ns
Cossⓘ - Выходная емкость: 160 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.73 Ohm
Тип корпуса: TO-220F
Аналог (замена) для FQPF9N50T
FQPF9N50T Datasheet (PDF)
fqpf9n50ydtu fqpf9n50 fqpf9n50t.pdf

April 2000TMQFETQFETQFETQFET 500V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 5.3A, 500V, RDS(on) = 0.73 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 28 nC)planar stripe, DMOS technology. Low Crss ( typical 20 pF)This advanced technology has been
fqpf9n50ct fqpf9n50cydtu.pdf

TMQFETFQP9N50C/FQPF9N50C500V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 9 A, 500V, RDS(on) = 0.8 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 28 nC)planar stripe, DMOS technology. Low Crss ( typical 24 pF)This advanced technology has been especially tailored to
fqpf9n50cf.pdf

December 2005TMFRFETFQPF9N50CF500V N-Channel MOSFETFeatures Description 9A, 500V, RDS(on) = 0.85 @VGS = 10 V These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low gate charge (typical 28 nC)DMOS technology. Low Crss (typical 24pF)This advanced technology has been especially tailored to
fqp9n50c fqpf9n50c.pdf

TMQFETFQP9N50C/FQPF9N50C500V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 9 A, 500V, RDS(on) = 0.8 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 28 nC)planar stripe, DMOS technology. Low Crss ( typical 24 pF)This advanced technology has been especially tailored to
Другие MOSFET... FQPF9N08L , FQPF9N15 , FQPF9N25CT , FQPF9N25CYDTU , FQPF9N30 , FQPF9N50 , FQPF9N50CT , FQPF9N50CYDTU , STF13NM60N , FQPF9N50YDTU , FQPF9N90CT , FQPF9P25YDTU , FQS4410TF , FQT13N06LTF , FQT13N06TF , FQT1N60CTFWS , FQT1N80TFWS .
History: RU30290R
History: RU30290R



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