FQT13N06TF Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: FQT13N06TF
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 2.1 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 2.8 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 90 ns
Cossⓘ - Выходная емкость: 95 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.11 Ohm
Тип корпуса: SOT-223
- подбор MOSFET транзистора по параметрам
FQT13N06TF Datasheet (PDF)
fqt13n06ltf fqt13n06tf.pdf

May 2001TMQFETFQT13N06L60V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 2.8A, 60V, RDS(on) = 0.11 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.8 nC)planar stripe, DMOS technology. Low Crss ( typical 17 pF)This advanced technology has been especially tail
fqt13n06l.pdf

May 2001TMQFETFQT13N06L60V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 2.8A, 60V, RDS(on) = 0.11 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.8 nC)planar stripe, DMOS technology. Low Crss ( typical 17 pF)This advanced technology has been especially tail
fqt13n06.pdf

January 2002TMQFETFQT13N0660V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 2.8A, 60V, RDS(on) = 0.14 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 5.8 nC)planar stripe, DMOS technology. Low Crss ( typical 15 pF)This advanced technology has been especially tailore
fqt13n06l.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: IXFB210N30P3 | FDG6320C | NCEAP016N10LL | STB10NK60ZT4 | SI7413DN | BUK455-100B | SSF65R420S2
History: IXFB210N30P3 | FDG6320C | NCEAP016N10LL | STB10NK60ZT4 | SI7413DN | BUK455-100B | SSF65R420S2



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