FQT4N20LTF. Аналоги и основные параметры

Наименование производителя: FQT4N20LTF

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 2.2 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 200 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 0.85 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 70 ns

Cossⓘ - Выходная емкость: 36 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 1.35 Ohm

Тип корпуса: SOT-223

Аналог (замена) для FQT4N20LTF

- подборⓘ MOSFET транзистора по параметрам

 

FQT4N20LTF даташит

 ..1. Size:625K  fairchild semi
 fqt4n20ltf.pdf pdf_icon

FQT4N20LTF

May 2001 TM QFET FQT4N20L 200V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 0.85A, 200V, RDS(on) = 1.35 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 4.0 nC) planar stripe, DMOS technology. Low Crss ( typical 6.0 pF) This advanced technology has been especially t

 6.1. Size:627K  fairchild semi
 fqt4n20l.pdf pdf_icon

FQT4N20LTF

May 2001 TM QFET FQT4N20L 200V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 0.85A, 200V, RDS(on) = 1.35 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 4.0 nC) planar stripe, DMOS technology. Low Crss ( typical 6.0 pF) This advanced technology has been especially t

 6.2. Size:831K  onsemi
 fqt4n20l.pdf pdf_icon

FQT4N20LTF

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 7.1. Size:627K  fairchild semi
 fqt4n20tf.pdf pdf_icon

FQT4N20LTF

May 2001 TM QFET FQT4N20 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 0.85A, 200V, RDS(on) = 1.4 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 5.0 nC) planar stripe, DMOS technology. Low Crss ( typical 5.0 pF) This advanced technology has been especially tailored

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Другие IGBT... FQPF9P25YDTU, FQS4410TF, FQT13N06LTF, FQT13N06TF, FQT1N60CTFWS, FQT1N80TFWS, FQT2P25TF, FQT3P20TF, IRF2807, FQT4N20TF, FQT4N25TF, FQT5P10TF, FQT7N10LTF, FQT7N10TF, FQU10N20CTU, FQU10N20LTU, FQU10N20TU