Справочник MOSFET. FQT4N25TF

 

FQT4N25TF Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: FQT4N25TF
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 2.5 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 250 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 0.83 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 45 ns
   Cossⓘ - Выходная емкость: 35 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 1.75 Ohm
   Тип корпуса: SOT-223
     - подбор MOSFET транзистора по параметрам

 

FQT4N25TF Datasheet (PDF)

 ..1. Size:652K  fairchild semi
 fqt4n25tf.pdf pdf_icon

FQT4N25TF

May 2001TMQFETFQT4N25250V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 0.83A, 250V, RDS(on) = 1.75 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.3 nC)planar stripe, DMOS technology. Low Crss ( typical 4.8 pF)This advanced technology has been especially tailored

 7.1. Size:653K  fairchild semi
 fqt4n25.pdf pdf_icon

FQT4N25TF

May 2001TMQFETFQT4N25250V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 0.83A, 250V, RDS(on) = 1.75 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.3 nC)planar stripe, DMOS technology. Low Crss ( typical 4.8 pF)This advanced technology has been especially tailored

 8.1. Size:627K  fairchild semi
 fqt4n20tf.pdf pdf_icon

FQT4N25TF

May 2001TMQFETFQT4N20200V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 0.85A, 200V, RDS(on) = 1.4 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 5.0 nC)planar stripe, DMOS technology. Low Crss ( typical 5.0 pF)This advanced technology has been especially tailored

 8.2. Size:625K  fairchild semi
 fqt4n20ltf.pdf pdf_icon

FQT4N25TF

May 2001TMQFETFQT4N20L200V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 0.85A, 200V, RDS(on) = 1.35 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.0 nC)planar stripe, DMOS technology. Low Crss ( typical 6.0 pF)This advanced technology has been especially t

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History: ST2315S23R | NCEP026N10F | SQD50N04-4M1 | SI7913DN | JCS5N50CT | MC11N005 | NVMFS5C628N

 

 
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