FQT4N25TF. Аналоги и основные параметры

Наименование производителя: FQT4N25TF

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 2.5 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 250 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 0.83 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 45 ns

Cossⓘ - Выходная емкость: 35 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 1.75 Ohm

Тип корпуса: SOT-223

Аналог (замена) для FQT4N25TF

- подборⓘ MOSFET транзистора по параметрам

 

FQT4N25TF даташит

 ..1. Size:652K  fairchild semi
 fqt4n25tf.pdf pdf_icon

FQT4N25TF

May 2001 TM QFET FQT4N25 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 0.83A, 250V, RDS(on) = 1.75 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 4.3 nC) planar stripe, DMOS technology. Low Crss ( typical 4.8 pF) This advanced technology has been especially tailored

 7.1. Size:653K  fairchild semi
 fqt4n25.pdf pdf_icon

FQT4N25TF

May 2001 TM QFET FQT4N25 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 0.83A, 250V, RDS(on) = 1.75 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 4.3 nC) planar stripe, DMOS technology. Low Crss ( typical 4.8 pF) This advanced technology has been especially tailored

 8.1. Size:627K  fairchild semi
 fqt4n20tf.pdf pdf_icon

FQT4N25TF

May 2001 TM QFET FQT4N20 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 0.85A, 200V, RDS(on) = 1.4 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 5.0 nC) planar stripe, DMOS technology. Low Crss ( typical 5.0 pF) This advanced technology has been especially tailored

 8.2. Size:625K  fairchild semi
 fqt4n20ltf.pdf pdf_icon

FQT4N25TF

May 2001 TM QFET FQT4N20L 200V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 0.85A, 200V, RDS(on) = 1.35 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 4.0 nC) planar stripe, DMOS technology. Low Crss ( typical 6.0 pF) This advanced technology has been especially t

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