FQT4N25TF Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: FQT4N25TF
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 2.5 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 250 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 0.83 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 45 ns
Cossⓘ - Выходная емкость: 35 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 1.75 Ohm
Тип корпуса: SOT-223
Аналог (замена) для FQT4N25TF
FQT4N25TF Datasheet (PDF)
fqt4n25tf.pdf

May 2001TMQFETFQT4N25250V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 0.83A, 250V, RDS(on) = 1.75 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.3 nC)planar stripe, DMOS technology. Low Crss ( typical 4.8 pF)This advanced technology has been especially tailored
fqt4n25.pdf

May 2001TMQFETFQT4N25250V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 0.83A, 250V, RDS(on) = 1.75 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.3 nC)planar stripe, DMOS technology. Low Crss ( typical 4.8 pF)This advanced technology has been especially tailored
fqt4n20tf.pdf

May 2001TMQFETFQT4N20200V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 0.85A, 200V, RDS(on) = 1.4 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 5.0 nC)planar stripe, DMOS technology. Low Crss ( typical 5.0 pF)This advanced technology has been especially tailored
fqt4n20ltf.pdf

May 2001TMQFETFQT4N20L200V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 0.85A, 200V, RDS(on) = 1.35 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.0 nC)planar stripe, DMOS technology. Low Crss ( typical 6.0 pF)This advanced technology has been especially t
Другие MOSFET... FQT13N06LTF , FQT13N06TF , FQT1N60CTFWS , FQT1N80TFWS , FQT2P25TF , FQT3P20TF , FQT4N20LTF , FQT4N20TF , AON6380 , FQT5P10TF , FQT7N10LTF , FQT7N10TF , FQU10N20CTU , FQU10N20LTU , FQU10N20TU , FQU11P06TU , FQU12N20TU .
History: FQPF9N15 | BUK7Y12-100E
History: FQPF9N15 | BUK7Y12-100E



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