Справочник MOSFET. FQT7N10TF

 

FQT7N10TF Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: FQT7N10TF
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 2 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 25 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 1.7 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 24 ns
   Cossⓘ - Выходная емкость: 60 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.35 Ohm
   Тип корпуса: SOT-223
 

 Аналог (замена) для FQT7N10TF

   - подбор ⓘ MOSFET транзистора по параметрам

 

FQT7N10TF Datasheet (PDF)

 ..1. Size:637K  fairchild semi
 fqt7n10tf.pdf pdf_icon

FQT7N10TF

May 2001TMQFETFQT7N10100V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 1.7A, 100V, RDS(on) = 0.35 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 5.8 nC)planar stripe, DMOS technology. Low Crss ( typical 10 pF)This advanced technology has been especially tailored t

 7.1. Size:640K  fairchild semi
 fqt7n10ltf.pdf pdf_icon

FQT7N10TF

May 2001TMQFETFQT7N10L100V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 1.7A, 100V, RDS(on) = 0.35 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.6 nC)planar stripe, DMOS technology. Low Crss ( typical 12 pF)This advanced technology has been especially tai

 7.2. Size:642K  fairchild semi
 fqt7n10l.pdf pdf_icon

FQT7N10TF

May 2001TMQFETFQT7N10L100V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 1.7A, 100V, RDS(on) = 0.35 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.6 nC)planar stripe, DMOS technology. Low Crss ( typical 12 pF)This advanced technology has been especially tai

 7.3. Size:638K  fairchild semi
 fqt7n10.pdf pdf_icon

FQT7N10TF

May 2001TMQFETFQT7N10100V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 1.7A, 100V, RDS(on) = 0.35 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 5.8 nC)planar stripe, DMOS technology. Low Crss ( typical 10 pF)This advanced technology has been especially tailored t

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... FQT1N80TFWS , FQT2P25TF , FQT3P20TF , FQT4N20LTF , FQT4N20TF , FQT4N25TF , FQT5P10TF , FQT7N10LTF , AO3401 , FQU10N20CTU , FQU10N20LTU , FQU10N20TU , FQU11P06TU , FQU12N20TU , FQU13N06LTU , FQU13N06TU , FQU13N10TU .

History: IMW120R350M1H | AONS36306 | 2SK2805 | AP18N20GH-HF | 2SK3032 | STS1HNK60 | UPA2793GR

 

 
Back to Top

 


 
.