FQT7N10TF. Аналоги и основные параметры

Наименование производителя: FQT7N10TF

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 2 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 100 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 25 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 1.7 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 24 ns

Cossⓘ - Выходная емкость: 60 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.35 Ohm

Тип корпуса: SOT-223

Аналог (замена) для FQT7N10TF

- подборⓘ MOSFET транзистора по параметрам

 

FQT7N10TF даташит

 ..1. Size:637K  fairchild semi
 fqt7n10tf.pdf pdf_icon

FQT7N10TF

May 2001 TM QFET FQT7N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 1.7A, 100V, RDS(on) = 0.35 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 5.8 nC) planar stripe, DMOS technology. Low Crss ( typical 10 pF) This advanced technology has been especially tailored t

 7.1. Size:640K  fairchild semi
 fqt7n10ltf.pdf pdf_icon

FQT7N10TF

May 2001 TM QFET FQT7N10L 100V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 1.7A, 100V, RDS(on) = 0.35 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 4.6 nC) planar stripe, DMOS technology. Low Crss ( typical 12 pF) This advanced technology has been especially tai

 7.2. Size:642K  fairchild semi
 fqt7n10l.pdf pdf_icon

FQT7N10TF

May 2001 TM QFET FQT7N10L 100V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 1.7A, 100V, RDS(on) = 0.35 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 4.6 nC) planar stripe, DMOS technology. Low Crss ( typical 12 pF) This advanced technology has been especially tai

 7.3. Size:638K  fairchild semi
 fqt7n10.pdf pdf_icon

FQT7N10TF

May 2001 TM QFET FQT7N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 1.7A, 100V, RDS(on) = 0.35 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 5.8 nC) planar stripe, DMOS technology. Low Crss ( typical 10 pF) This advanced technology has been especially tailored t

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