FQU5N50TU - аналоги и даташиты транзистора

 

FQU5N50TU - Даташиты. Аналоги. Основные параметры


   Наименование производителя: FQU5N50TU
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 50 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 3.5 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 55 ns
   Cossⓘ - Выходная емкость: 75 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 1.8 Ohm
   Тип корпуса: I-PAK
 

 Аналог (замена) для FQU5N50TU

   - подбор ⓘ MOSFET транзистора по параметрам

 

FQU5N50TU Datasheet (PDF)

 ..1. Size:768K  fairchild semi
 fqd5n50tf fqu5n50tu.pdf pdf_icon

FQU5N50TU

April 2000TMQFETQFETQFETQFET 500V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 3.5A, 500V, RDS(on) = 1.8 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 13 nC)planar stripe, DMOS technology. Low Crss ( typical 8.5 pF)This advanced technology

 7.1. Size:664K  fairchild semi
 fqd5n50c fqd5n50ctf fqd5n50ctm fqd5n50c fqu5n50c fqu5n50ctu.pdf pdf_icon

FQU5N50TU

October 2008QFETFQD5N50C / FQU5N50C500V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 4.0A, 500V, RDS(on) = 1.4 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 18nC)planar stripe, DMOS technology. Low Crss ( typical 15pF)This advanced technology has been especially

 9.1. Size:695K  fairchild semi
 fqd5n20 fqu5n20.pdf pdf_icon

FQU5N50TU

April 2000TMQFETQFETQFETQFETFQD5N20 / FQU5N20200V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 3.8A, 200V, RDS(on) = 1.2 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 6.0 nC)planar stripe, DMOS technology. Low Crss ( typical 6.0 pF)This advanced technology

 9.2. Size:730K  fairchild semi
 fqd5n40tf fqd5n40tm fqu5n40tu.pdf pdf_icon

FQU5N50TU

April 2000TMQFETQFETQFETQFETFQD5N40 / FQU5N40400V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 3.4A, 400V, RDS(on) = 1.6 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 10 nC)planar stripe, DMOS technology. Low Crss ( typical 7.0 pF)This advanced technology

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... FQU3N60CTU , FQU3N60TU , FQU3P20TU , FQU3P50TU , FQU4N20TU , FQU4N25TU , FQU5N40TU , FQU5N50CTU , IRFZ44 , FQU5N60CTU , FQU5P20TU , FQU6N40CTU , FQU6P25TU , FQU7N10LTU , FQU7P06TU , FQU7P20TU , FQU8N25TU .

History: AOD403 | AOT5N50 | IRFP452R | SL5N50D | IXFY5N50P3 | AP05N50S-HF | MDD5N50RH

 

 
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