Справочник MOSFET. IRFZ44A

 

IRFZ44A MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: IRFZ44A

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 126 W

Предельно допустимое напряжение сток-исток (Uds): 60 V

Максимально допустимый постоянный ток стока (Id): 50 A

Максимальная температура канала (Tj): 150 °C

Выходная емкость (Cd): 1770 pf

Сопротивление сток-исток открытого транзистора (Rds): 0.024 Ohm

Тип корпуса: TO220

Аналог (замена) для IRFZ44A

 

 

IRFZ44A Datasheet (PDF)

1.1. irfz44a.pdf Size:503K _samsung

IRFZ44A
IRFZ44A

Advanced Power MOSFET FEATURES BVDSS = 60 V Avalanche Rugged Technology Ω RDS(on) = 0.024 Rugged Gate Oxide Technology Lower Input Capacitance ID = 50 A Improved Gate Charge Extended Safe Operating Area 175 Operating Temperature Lower Leakage Current : 10 µA (Max.) @ VDS = 60V Ω Lower RDS(ON) : 0.020 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratin

4.1. irfz44ns 1.pdf Size:57K _philips

IRFZ44A
IRFZ44A

Philips Semiconductors Product specification N-channel enhancement mode IRFZ44NS TrenchMOSTM transistor GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a surface mounting VDS Drain-source voltage 55 V plastic envelope using ’trench’ ID Drain current (DC) 49 A technology. The device feat

4.2. irfz44n 1.pdf Size:52K _philips

IRFZ44A
IRFZ44A

Philips Semiconductors Product specification N-channel enhancement mode IRFZ44N TrenchMOSTM transistor GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope using VDS Drain-source voltage 55 V ’trench’ technology. The device ID Drain current (DC) 49 A features very low on-s

 4.3. irfz44ns 1.pdf Size:57K _international_rectifier

IRFZ44A
IRFZ44A

Philips Semiconductors Product specification N-channel enhancement mode IRFZ44NS TrenchMOSTM transistor GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a surface mounting VDS Drain-source voltage 55 V plastic envelope using ’trench’ ID Drain current (DC) 49 A technology. The device feat

4.4. irfz44vpbf.pdf Size:226K _international_rectifier

IRFZ44A
IRFZ44A

PD - 94826A IRFZ44VPbF HEXFET® Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D l Dynamic dv/dt Rating VDSS = 60V l 175°C Operating Temperature l Fast Switching RDS(on) = 16.5mΩ l Fully Avalanche Rated G l Optimized for SMPS Applications ID = 55A S l Lead-Free Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced pro

 4.5. irfz44v.pdf Size:229K _international_rectifier

IRFZ44A
IRFZ44A

PD - 93957A IRFZ44V HEXFET® Power MOSFET Advanced Process Technology D VDSS = 60V Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature RDS(on) = 16.5mW G Fast Switching Fully Avalanche Rated ID = 55A Optimized for SMPS Applications S Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to ac

4.6. irfz44rpbf.pdf Size:221K _international_rectifier

IRFZ44A
IRFZ44A

PD - 94823 IRFZ44RPbF HEXFET® Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D l Dynamic dv/dt Rating VDSS = 60V l 175°C Operating Temperature l Fast Switching RDS(on) = 0.028Ω G l Fully Avalanche Rated l Drop in Replacement of the IRFZ44 ID = 50*A for Linear/Audio Applications S l Lead-Free Description Advanced HEXFET® Power MOSFETs from Internation

4.7. irfz44npbf.pdf Size:226K _international_rectifier

IRFZ44A
IRFZ44A

PD - 94787B IRFZ44NPbF HEXFET® Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D l Dynamic dv/dt Rating VDSS = 55V l 175°C Operating Temperature l Fast Switching RDS(on) = 17.5mΩ l Fully Avalanche Rated G l Lead-Free ID = 49A S Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve ex

4.8. irfz44e.pdf Size:96K _international_rectifier

IRFZ44A
IRFZ44A

PD - 91671B IRFZ44E HEXFET® Power MOSFET Advanced Process Technology D VDSS = 60V Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching RDS(on) = 0.023Ω G Fully Avalanche Rated ID = 48A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefi

4.9. irfz44.pdf Size:859K _international_rectifier

IRFZ44A
IRFZ44A

PD - 94943 IRFZ44PbF • Lead-Free 01/14/04 Document Number: 91291 www.vishay.com 1 IRFZ44PbF Document Number: 91291 www.vishay.com 2 IRFZ44PbF Document Number: 91291 www.vishay.com 3 IRFZ44PbF Document Number: 91291 www.vishay.com 4 IRFZ44PbF Document Number: 91291 www.vishay.com 5 IRFZ44PbF Document Number: 91291 www.vishay.com 6 IRFZ44PbF TO-220AB Package Outline

4.10. irfz44espbf.pdf Size:234K _international_rectifier

IRFZ44A
IRFZ44A

PD - 95572 IRFZ44ESPbF IRFZ44ELPbF HEXFET® Power MOSFET l Advanced Process Technology l Surface Mount (IRFZ44ES) D VDSS = 60V l Low-profile through-hole (IRFZ44EL) l 175°C Operating Temperature RDS(on) = 0.023Ω l Fast Switching G l Fully Avalanche Rated ID = 48A l Lead-Free S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing tec

4.11. irfz44r.pdf Size:153K _international_rectifier

IRFZ44A
IRFZ44A

PD - 93956 IRFZ44R HEXFET® Power MOSFET Advanced Process Technology D VDSS = 60V Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature RDS(on) = 0.028Ω G Fast Switching Fully Avalanche Rated ID = 50*A Drop in Replacement of the IRFZ44 S for Linear/Audio Applications Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize a

4.12. irfz44vzl irfz44vzpbf irfz44vzspbf.pdf Size:301K _international_rectifier

IRFZ44A
IRFZ44A

PD - 94755 IRFZ44VZ AUTOMOTIVE MOSFET IRFZ44VZS IRFZ44VZL Features HEXFET® Power MOSFET ● Advanced Process Technology D ● Ultra Low On-Resistance VDSS = 60V ● 175°C Operating Temperature ● Fast Switching ● Repetitive Avalanche Allowed up to Tjmax RDS(on) = 12mΩ G Description ID = 57A Specifically designed for Automotive applications, S this HEXFET® Power MOSFE

4.13. irfz44s.pdf Size:325K _international_rectifier

IRFZ44A
IRFZ44A

PD - 9.893A IRFZ44S/L HEXFET® Power MOSFET Advanced Process Technology D VDSS = 60V Surface Mount (IRFZ44S) Low-profile through-hole (IRFZ44L) 175°C Operating Temperature RDS(on) = 0.028Ω Fast Switching G ID = 50A S Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon

4.14. irfz44n 1.pdf Size:52K _international_rectifier

IRFZ44A
IRFZ44A

Philips Semiconductors Product specification N-channel enhancement mode IRFZ44N TrenchMOSTM transistor GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope using VDS Drain-source voltage 55 V ’trench’ technology. The device ID Drain current (DC) 49 A features very low on-s

4.15. auirfz44zstrl.pdf Size:327K _international_rectifier

IRFZ44A
IRFZ44A

PD - 97543 AUIRFZ44Z AUTOMOTIVE GRADE AUIRFZ44ZS Features ● Advanced Process Technology HEXFET® Power MOSFET ● Ultra Low On-Resistance ● 175°C Operating Temperature D V(BR)DSS 55V ● Fast Switching ● Repetitive Avalanche Allowed up to RDS(on) max. 13.9m Ω Tjmax G ● Lead-Free, RoHS Compliant ID 51A S ● Automotive Qualified * D Description D Specifically

4.16. irfz44zlpbf irfz44zpbf irfz44zspbf.pdf Size:382K _international_rectifier

IRFZ44A
IRFZ44A

PD - 95379A IRFZ44ZPbF IRFZ44ZSPbF Features Advanced Process Technology IRFZ44ZLPbF Ultra Low On-Resistance HEXFET® Power MOSFET Dynamic dv/dt Rating 175°C Operating Temperature D Fast Switching VDSS = 55V Repetitive Avalanche Allowed up to Tjmax Lead-Free RDS(on) = 13.9mΩ G Description ID = 51A S This HEXFET® Power MOSFET utilizes the latest processing techniqu

4.17. irfz44ns.pdf Size:151K _international_rectifier

IRFZ44A
IRFZ44A

PD - 94153 IRFZ44NS IRFZ44NL Advanced Process Technology Surface Mount (IRFZ44NS) HEXFET® Power MOSFET Low-profile through-hole (IRFZ44NL) D 175°C Operating Temperature VDSS = 55V Fast Switching Fully Avalanche Rated RDS(on) = 0.0175Ω Description G Advanced HEXFET® Power MOSFETs from International ID = 49A Rectifier utilize advanced processing techniques to achieve e

4.18. irfz44vs.pdf Size:145K _international_rectifier

IRFZ44A
IRFZ44A

PD - 94050A IRFZ44VS IRFZ44VL HEXFET® Power MOSFET Advanced Process Technology Ultra Low On-Resistance D Dynamic dv/dt Rating VDSS = 60V 175°C Operating Temperature Fast Switching RDS(on) = 16.5mΩ Fully Avalanche Rated G Optimized for SMPS Applications ID = 55A S Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing te

4.19. irfz44n.pdf Size:100K _international_rectifier

IRFZ44A
IRFZ44A

PD - 94053 IRFZ44N HEXFET® Power MOSFET Advanced Process Technology D VDSS = 55V Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature RDS(on) = 17.5mΩ G Fast Switching Fully Avalanche Rated ID = 49A S Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistan

4.20. irfz44nlpbf irfz44nspbf.pdf Size:334K _international_rectifier

IRFZ44A
IRFZ44A

 IRFZ44NSPbF l IRFZ44NLPbF l ® l l D DSS l l l DS(on) Ω Description G ® D

4.21. irfz44epbf.pdf Size:150K _international_rectifier

IRFZ44A
IRFZ44A

PD - 94822 IRFZ44EPbF HEXFET® Power MOSFET Advanced Process Technology Dynamic dv/dt Rating D VDSS = 60V 175°C Operating Temperature Fast Switching RDS(on) = 0.023Ω Fully Avalanche Rated G Lead-Free ID = 48A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

4.22. irfz44es.pdf Size:163K _international_rectifier

IRFZ44A
IRFZ44A

PD - 9.1714 IRFZ44ES/L PRELIMINARY HEXFET® Power MOSFET Advanced Process Technology D VDSS = 60V Surface Mount (IRFZ44ES) Low-profile through-hole (IRFZ44EL) 175°C Operating Temperature RDS(on) = 0.023Ω G Fast Switching Fully Avalanche Rated ID = 48A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve

4.23. auirfz44vzstrl.pdf Size:274K _international_rectifier

IRFZ44A
IRFZ44A

PD - 96354 AUTOMOTIVE GRADE AUIRFZ44VZS HEXFET® Power MOSFET Features l Advanced Process Technology D V(BR)DSS 60V l Ultra Low On-Resistance RDS(on) typ. 9.6mΩ l 175°C Operating Temperature l Fast Switching G max. 12mΩ l Repetitive Avalanche Allowed up to Tjmax S l Lead-Free, RoHS Compliant ID 57A l Automotive Qualified * Description D Specifically designed for Automo

4.24. irfz44s irfz44l sihfz44s sihfz44l.pdf Size:790K _vishay

IRFZ44A
IRFZ44A

IRFZ44S, IRFZ44L, SiHFZ44S, SiHFZ44L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition VDS (V) 60 • Advanced Process Technology RDS(on) ()VGS = 10 V 0.028 • Surface Mount (IRFZ44S, SiHFZ44S) Qg (Max.) (nC) 67 • Low-Profile Through-Hole (IRFZ44L, SiHFZ44L) • 175 °C Operating Temperature Qgs (nC) 18 • Fast S

4.25. irfz44l irfz44s irfz44spbf sihfz44l sihfz44s.pdf Size:815K _vishay

IRFZ44A
IRFZ44A

IRFZ44S, IRFZ44L, SiHFZ44S, SiHFZ44L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition VDS (V) 60 • Advanced Process Technology RDS(on) ()VGS = 10 V 0.028 • Surface Mount (IRFZ44S, SiHFZ44S) Qg (Max.) (nC) 67 • Low-Profile Through-Hole (IRFZ44L, SiHFZ44L) • 175 °C Operating Temperature Qgs (nC) 18 • Fast S

4.26. irfz44r sihfz44r.pdf Size:1287K _vishay

IRFZ44A
IRFZ44A

IRFZ44R, SiHFZ44R Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Advanced Process Technology VDS (V) 60 Available • Ultra Low On-Resistance RDS(on) (Ω)VGS = 10 V 0.028 RoHS* • Dynamic dV/dt Rating COMPLIANT Qg (Max.) (nC) 67 • 175 °C Operating Temperature • Fast Switching Qgs (nC) 18 • Fully Avalanche Rated Qgd (nC) 25 • Drop in Replacement of the

4.27. irfz44pbf sihfz44.pdf Size:1542K _vishay

IRFZ44A
IRFZ44A

IRFZ44, SiHFZ44 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) 60 Available • 175 °C Operating Temperature RDS(on) (Ω)VGS = 10 V 0.028 RoHS* • Fast Switching Qg (Max.) (nC) 67 COMPLIANT • Ease of Paralleling Qgs (nC) 18 Qgd (nC) 25 • Simple Drive Requirements Configuration Single • Compliant to RoHS Directive 2002/95/EC D

4.28. irfz44r irfz44rpbf sihfz44r.pdf Size:1289K _vishay

IRFZ44A
IRFZ44A

IRFZ44R, SiHFZ44R Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Advanced Process Technology VDS (V) 60 Available • Ultra Low On-Resistance RDS(on) (Ω)VGS = 10 V 0.028 RoHS* • Dynamic dV/dt Rating COMPLIANT Qg (Max.) (nC) 67 • 175 °C Operating Temperature • Fast Switching Qgs (nC) 18 • Fully Avalanche Rated Qgd (nC) 25 • Drop in Replacement of the

4.29. irfz44 sihfz44.pdf Size:1540K _vishay

IRFZ44A
IRFZ44A

IRFZ44, SiHFZ44 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) 60 Available • 175 °C Operating Temperature RDS(on) (Ω)VGS = 10 V 0.028 RoHS* • Fast Switching Qg (Max.) (nC) 67 COMPLIANT • Ease of Paralleling Qgs (nC) 18 Qgd (nC) 25 • Simple Drive Requirements Configuration Single • Compliant to RoHS Directive 2002/95/EC D

4.30. lirfz44n.pdf Size:252K _lrc

IRFZ44A
IRFZ44A

LESHAN RADIO COMPANY, LTD. 55V N-Channel Mode MOSFET VDS=55V LIRFZ44N RDS(ON), Vgs@10V, Ids@25A =17.5mΩ Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated TO-220 D G S Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 49 ID @ TC = 10

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top