Справочник MOSFET. IRF640NPBF

 

IRF640NPBF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IRF640NPBF
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 150 W
   Предельно допустимое напряжение сток-исток |Uds|: 200 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
   Пороговое напряжение включения |Ugs(th)|: 4 V
   Максимально допустимый постоянный ток стока |Id|: 18 A
   Максимальная температура канала (Tj): 175 °C
   Общий заряд затвора (Qg): 67 nC
   Время нарастания (tr): 19 ns
   Выходная емкость (Cd): 185 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.15 Ohm
   Тип корпуса: TO-220AB

 Аналог (замена) для IRF640NPBF

 

 

IRF640NPBF Datasheet (PDF)

 ..1. Size:336K  international rectifier
 irf640nlpbf irf640npbf irf640nspbf.pdf

IRF640NPBF IRF640NPBF

PD - 95046AIRF640NPbFIRF640NSPbFl Advanced Process Technology IRF640NLPbFl Dynamic dv/dt RatingHEXFET Power MOSFETl 175C Operating Temperaturel Fast SwitchingDVDSS = 200Vl Fully Avalanche Ratedl Ease of Parallelingl Simple Drive Requirements RDS(on) = 0.15Gl Lead-FreeDescriptionID = 18AFifth Generation HEXFET Power MOSFETs fromSInternational Rectif

 ..2. Size:336K  infineon
 irf640npbf irf640nspbf irf640nlpbf.pdf

IRF640NPBF IRF640NPBF

PD - 95046AIRF640NPbFIRF640NSPbFl Advanced Process Technology IRF640NLPbFl Dynamic dv/dt RatingHEXFET Power MOSFETl 175C Operating Temperaturel Fast SwitchingDVDSS = 200Vl Fully Avalanche Ratedl Ease of Parallelingl Simple Drive Requirements RDS(on) = 0.15Gl Lead-FreeDescriptionID = 18AFifth Generation HEXFET Power MOSFETs fromSInternational Rectif

 7.1. Size:155K  international rectifier
 irf640n.pdf

IRF640NPBF IRF640NPBF

PD - 94006IRF640NIRF640NSIRF640NL Advanced Process TechnologyHEXFET Power MOSFET Dynamic dv/dt RatingD 175C Operating TemperatureVDSS = 200V Fast Switching Fully Avalanche RatedRDS(on) = 0.15 Ease of ParallelingG Simple Drive RequirementsDescriptionID = 18AFifth Generation HEXFET Power MOSFETs from SInternational Rectifier utilize advanced processi

 7.2. Size:245K  inchange semiconductor
 irf640n.pdf

IRF640NPBF IRF640NPBF

isc N-Channel MOSFET Transistor IRF640NIIRF640NFEATURESStatic drain-source on-resistance:RDS(on) 150mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITION Efficient and reliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T

 7.3. Size:228K  inchange semiconductor
 irf640ns.pdf

IRF640NPBF IRF640NPBF

Isc N-Channel MOSFET Transistor IRF640NSFEATURESWith TO-263( DPAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)a

 7.4. Size:244K  inchange semiconductor
 irf640nl.pdf

IRF640NPBF IRF640NPBF

Isc N-Channel MOSFET Transistor IRF640NLFEATURESWith TO-262 packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PAR

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