IRF6633APBF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IRF6633APBF
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 2.3 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 16 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 13 ns
Cossⓘ - Выходная емкость: 680 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0056 Ohm
Тип корпуса: DIRECTFET
Аналог (замена) для IRF6633APBF
IRF6633APBF Datasheet (PDF)
irf6633apbf.pdf
PD - 97122AIRF6633APbFIRF6633ATRPbFDirectFET Power MOSFET Typical values (unless otherwise specified)l RoHS Compliant VDSS VGS RDS(on) RDS(on) l Lead-Free (Qualified up to 260C Reflow)20V max 20V max 4.1m@ 10V 7.0m@ 4.5Vl Application Specific MOSFETsQg tot Qgd Qgs2 Qrr Qoss Vgs(th) l Ideal for CPU Core DC-DC Converters11nC 3.9nC 1.7nC 33nC 8.5nC 1.8Vl Lo
irf6633.pdf
PD - 96989BIRF6633DirectFET Power MOSFET Typical values (unless otherwise specified)l RoHs Compliant Containing No Lead and Bromide VDSS VGS RDS(on) RDS(on) l Low Profile (
irf6631.pdf
PD - 97183IRF6631DirectFET Power MOSFET Typical values (unless otherwise specified)l RoHS compliant containing no lead or bromide VDSS VGS RDS(on) RDS(on) l Low Profile (
irf6638pbf.pdf
PD - 97239IRF6638PbFIRF6638TRPbFDirectFET Power MOSFET l RoHs Compliant Typical values (unless otherwise specified)l Lead-Free (Qualified up to 260C Reflow)VDSS VGS RDS(on) RDS(on) l Application Specific MOSFETsl Ideal for CPU Core DC-DC Converters 30V max 20V max 2.2m@ 10V 3.0m@ 4.5Vl Low Conduction LossesQg tot Qgd Qgs2 Qrr Qoss Vgs(th) l High Cdv/dt I
irf6635pbf.pdf
PD - 97086IRF6635PbFIRF6635TRPbFDirectFET Power MOSFET l RoHs Compliant Typical values (unless otherwise specified)l Lead-Free (Qualified up to 260C Reflow)VDSS VGS RDS(on) RDS(on) l Application Specific MOSFETsl Ideal for CPU Core DC-DC Converters30V max 20V max 1.3m@ 10V 1.8m@ 4.5Vl Low Conduction LossesQg tot Qgd Qgs2 Qrr Qoss Vgs(th) l High Cdv/dt
irf6637pbf.pdf
PD - 97088IRF6637PbFIRF6637TRPbFDirectFET Power MOSFET Typical values (unless otherwise specified)l RoHS Compliant VDSS VGS RDS(on) RDS(on) l Lead-Free (Qualified up to 260C Reflow)30V max 20V max 5.7m@ 10V 8.2m@ 4.5Vl Application Specific MOSFETsQg tot Qgd Qgs2 Qrr Qoss Vgs(th) l Ideal for CPU Core DC-DC Convertersl Low Conduction Losses and Switching L
irf6636.pdf
PD - 96977DIRF6636DirectFET Power MOSFET Typical values (unless otherwise specified)l RoHS compliant containing no lead or bromide VDSS VGS RDS(on) RDS(on) l Low Profile (
irf6637pbf irf6637trpbf.pdf
PD - 97088IRF6637PbFIRF6637TRPbFDirectFET Power MOSFET Typical values (unless otherwise specified)l RoHS Compliant VDSS VGS RDS(on) RDS(on) l Lead-Free (Qualified up to 260C Reflow)30V max 20V max 5.7m@ 10V 8.2m@ 4.5Vl Application Specific MOSFETsQg tot Qgd Qgs2 Qrr Qoss Vgs(th) l Ideal for CPU Core DC-DC Convertersl Low Conduction Losses and Switching L
Другие MOSFET... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918