PD - 95572IRFZ44ESPbFIRFZ44ELPbFHEXFET Power MOSFETl Advanced Process Technologyl Surface Mount (IRFZ44ES)DVDSS = 60Vl Low-profile through-hole (IRFZ44EL)l 175C Operating TemperatureRDS(on) = 0.023l Fast SwitchingGl Fully Avalanche RatedID = 48Al Lead-FreeSDescriptionFifth Generation HEXFETs from International Rectifier utilize advancedprocessing tec

PD - 9.1714IRFZ44ES/LPRELIMINARYHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 60V Surface Mount (IRFZ44ES) Low-profile through-hole (IRFZ44EL) 175C Operating TemperatureRDS(on) = 0.023G Fast Switching Fully Avalanche RatedID = 48ASDescriptionFifth Generation HEXFETs from International Rectifier utilize advancedprocessing techniques to achieve

PD - 95572IRFZ44ESPbFIRFZ44ELPbFHEXFET Power MOSFETl Advanced Process Technologyl Surface Mount (IRFZ44ES)DVDSS = 60Vl Low-profile through-hole (IRFZ44EL)l 175C Operating TemperatureRDS(on) = 0.023l Fast SwitchingGl Fully Avalanche RatedID = 48Al Lead-FreeSDescriptionFifth Generation HEXFETs from International Rectifier utilize advancedprocessing tec

IRFZ44ESwww.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a, e Qg (Max)Definition Surface Mount0.023 at VGS = 10 V 5060 66 nC Available in Tape and Reel0.027 at VGS = 4.5 V40 Dynamic dV/dt Rating Logic-Level Gate Drive Fast Switching Compliant to RoHS Dire

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFZ44ESFEATURESWith TO-263(D2PAK) packagingUninterruptible power supplyHigh speed switchingHard switched and high frequency circuits100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =2

PD - 91671BIRFZ44EHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 60V Dynamic dv/dt Rating 175C Operating Temperature Fast SwitchingRDS(on) = 0.023G Fully Avalanche RatedID = 48ASDescriptionFifth Generation HEXFETs from International Rectifier utilize advanced processingtechniques to achieve extremely low on-resistance per silicon area. Thisbenefi

PD - 94822IRFZ44EPbFHEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating DVDSS = 60V 175C Operating Temperature Fast SwitchingRDS(on) = 0.023 Fully Avalanche RatedG Lead-FreeID = 48ASDescriptionFifth Generation HEXFETs from International Rectifier utilize advanced processingtechniques to achieve extremely low on-resistance per silicon area.

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFZ44E IIRFZ44EFEATURESStatic drain-source on-resistance:RDS(on) 23mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM R