IRF7240PBF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IRF7240PBF
Тип транзистора: MOSFET
Полярность: P
Pdⓘ - Максимальная рассеиваемая мощность: 2.5 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 3 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 10.5 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 73 nC
trⓘ - Время нарастания: 490 ns
Cossⓘ - Выходная емкость: 580 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.015 Ohm
Тип корпуса: SO-8
Аналог (замена) для IRF7240PBF
IRF7240PBF Datasheet (PDF)
irf7240pbf.pdf
PD- 95253IRF7240PbFHEXFET Power MOSFETl Ultra Low On-ResistanceVDSS RDS(on) max IDl P-Channel MOSFET-40V 0.015@VGS = -10V -10.5Al Surface Mount0.025@VGS = -4.5V -8.4Al Available in Tape & Reell Lead-FreeA1 8DescriptionS DThese P-Channel MOSFETs from International2 7S DRectifier utilize advanced processing techniques toachieve the extremely low on-resistan
irf7240pbf.pdf
PD- 95253IRF7240PbFHEXFET Power MOSFETl Ultra Low On-ResistanceVDSS RDS(on) max IDl P-Channel MOSFET-40V 0.015@VGS = -10V -10.5Al Surface Mount0.025@VGS = -4.5V -8.4Al Available in Tape & Reell Lead-FreeA1 8DescriptionS DThese P-Channel MOSFETs from International2 7S DRectifier utilize advanced processing techniques toachieve the extremely low on-resistan
irf7240.pdf
PD- 93916IRF7240HEXFET Power MOSFET Ultra Low On-ResistanceVDSS RDS(on) max ID P-Channel MOSFET-40V 0.015@VGS = -10V -10.5A Surface Mount0.025@VGS = -4.5V -8.4A Available in Tape & ReelA1 8DescriptionS DThese P-Channel MOSFETs from International2 7S DRectifier utilize advanced processing techniques toachieve the extremely low on-resistance per silicon3 6
irf7240trpbf.pdf
IRF7240TRPBFwww.VBsemi.twP-Channel 40 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.010 at VGS = - 10 V - 16.1 100 % Rg Tested- 40 33 nC0.014 at VGS = - 4.5 V - 13.3 100 % UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONSS Load Switch POLSO-8GSD
irf7241.pdf
PD- 94087IRF7241HEXFET Power MOSFET)))) Trench Technology VDSS RDS(on) max (m) ID Ultra Low On-Resistance-40V 41@VGS = -10V -6.2A P-Channel MOSFET70@VGS = -4.5V -5.0A Available in Tape & ReelA1 8S DDescription2 7New trench HEXFET Power MOSFETs from DSInternational Rectifier utilize advanced processing3 6S Dtechniques to achieve ex
irf7241pbf.pdf
PD - 95294IRF7241PbFHEXFET Power MOSFET Trench Technology VDSS RDS(on) max (mW) ID Ultra Low On-Resistance-40V 41@VGS = -10V -6.2A P-Channel MOSFET70@VGS = -4.5V -5.0A Available in Tape & Reel Lead-FreeA1 8S DDescription2 7New trench HEXFET Power MOSFETs from DSInternational Rectifier utilize advanced processing3 6S Dtechniques to achie
irf7241pbf.pdf
PD - 95294IRF7241PbFHEXFET Power MOSFET Trench Technology VDSS RDS(on) max (mW) ID Ultra Low On-Resistance-40V 41@VGS = -10V -6.2A P-Channel MOSFET70@VGS = -4.5V -5.0A Available in Tape & Reel Lead-FreeA1 8S DDescription2 7New trench HEXFET Power MOSFETs from DSInternational Rectifier utilize advanced processing3 6S Dtechniques to achie
irf7241tr.pdf
IRF7241TRwww.VBsemi.twP-Channel 40 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.010 at VGS = - 10 V - 16.1 100 % Rg Tested- 40 33 nC0.014 at VGS = - 4.5 V - 13.3 100 % UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONSS Load Switch POLSO-8GSD1
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Список транзисторов
Обновления
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