IRF730B datasheet, аналоги, основные параметры
Наименование производителя: IRF730B 📄📄
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 104 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 400 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 6 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 11 ns
Cossⓘ - Выходная емкость: 38 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 1 Ohm
Тип корпуса: TO-220AB
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Аналог (замена) для IRF730B
- подборⓘ MOSFET транзистора по параметрам
IRF730B даташит
irf730b.pdf
IRF730B www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY Optimal Design VDS (V) at TJ max. 450 - Low Area Specific On-Resistance RDS(on) max. at 25 C ( ) VGS = 10 V 1.0 - Low Input Capacitance (Ciss) Qg max. (nC) 18 - Reduced Capacitive Switching Losses Qgs (nC) 3 - High Body Diode Ruggedness - Avalanche Energy Rated (UIS) Qgd (nC) 4 Opt
auirf7309q.pdf
AUTOMOTIVE GRADE AUIRF7309Q Features N-CHANNEL MOSFET N-CH P-CH Advanced Planar Technology 1 8 S1 D1 Low On-Resistance 2 7 VDSS 30V -30V G1 D1 Logic Level Gate Drive 3 6 S2 D2 Dual N and P Channel MOSFET RDS(on) max. 0.05 0.10 4 5 G2 D2 Dynamic dv/dt Rating P-CHANNEL MOSFET 150 C Operating Temperature Top View ID 4.7A -3.5A
irf7304q.pdf
PD - 96104 IRF7304QPbF HEXFET Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance 1 8 S1 D1 l Dual P Channel MOSFET VDSS = -20V 2 7 G1 D1 l Surface Mount l Available in Tape & Reel 3 6 S2 D2 l 150 C Operating Temperature 4 5 G2 D2 l Automotive [Q101] Qualified RDS(on) = 0.090 l Lead-Free Top View Description Specifically designed for Automotive appl
irf730as-l.pdf
PD-95114 SMPS MOSFET IRF730AS/LPbF HEXFET Power MOSFET Applications VDSS Rds(on) max ID l Switch Mode Power Supply (SMPS) l Uninterruptable Power Supply 400V 1.0 5.5A l High speed power switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and D 2 TO-
irf7304qpbf.pdf
PD - 96104 IRF7304QPbF HEXFET Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance 1 8 S1 D1 l Dual P Channel MOSFET VDSS = -20V 2 7 G1 D1 l Surface Mount l Available in Tape & Reel 3 6 S2 D2 l 150 C Operating Temperature 4 5 G2 D2 l Automotive [Q101] Qualified RDS(on) = 0.090 l Lead-Free Top View Description Specifically designed for Automotive appl
irf7304pbf-1.pdf
IRF7304PbF-1 HEXFET Power MOSFET VDS -20 V 1 8 S1 D1 RDS(on) max 0.09 2 7 (@V = -4.5V) G1 D1 GS Qg 22 nC 3 6 S2 D2 ID 4 5 -4.3 A G2 D2 (@T = 25 C) A SO-8 Top View Features Benefits Industry-standard pinout SO-8 Package Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant, Halogen-Free Environmentall
irf7301pbf.pdf
PD - 95176 IRF7301PbF HEXFET Power MOSFET l Generation V Technology l Ultra Low On-Resistance 1 8 l Dual N-Channel Mosfet S1 D1 VDSS = 20V l Surface Mount 2 7 G1 D1 l Available in Tape & Reel 3 6 S2 D2 l Dynamic dv/dt Rating 4 5 l Fast Switching G2 D2 RDS(on) = 0.050 l Lead-Free Top View Description Fifth Generation HEXFETs from International Rectifier utilize advanced
irf730s.pdf
PD - 95115 IRF730SPbF Lead-Free 3/16/04 Document Number 91048 www.vishay.com 1 IRF730SPbF Document Number 91048 www.vishay.com 2 IRF730SPbF Document Number 91048 www.vishay.com 3 IRF730SPbF Document Number 91048 www.vishay.com 4 IRF730SPbF Document Number 91048 www.vishay.com 5 IRF730SPbF Document Number 91048 www.vishay.com 6 IRF730SPbF D2Pak Package Outli
irf7304pbf.pdf
PD - 95038 IRF7304PbF HEXFET Power MOSFET l Generation V Technology l Ultra Low On-Resistance 1 8 S1 D1 l Dual P-Channel Mosfet VDSS = -20V 2 7 G1 D1 l Surface Mount 3 6 l Available in Tape & Reel S2 D2 l Dynamic dv/dt Rating 4 5 G2 D2 RDS(on) = 0.090 l Fast Switching l Lead-Free Top View Description Fifth Generation HEXFETs from International Rectifier utilize adva
irf7306qpbf.pdf
PD - 96105 IRF7306QPbF HEXFET Power MOSFET l Advanced Process Technology 1 8 l Ultra Low On-Resistance S1 D1 VDSS = -30V l Dual P Channel MOSFET 2 7 G1 D1 l Surface Mount 3 6 S2 D2 l Available in Tape & Reel 4 l 150 C Operating Temperature 5 G2 D2 RDS(on) = 0.10 l Automotive [Q101] Qualified l Lead-Free Top View Description Specifically designed for Automotive applic
irf7303.pdf
PD - 9.1239D IRF7303 HEXFET Power MOSFET Generation V Technology 1 8 Ultra Low On-Resistance D1 S1 VDSS = 30V Dual N-Channel Mosfet 2 7 G1 D1 Surface Mount 3 6 S2 D2 Available in Tape & Reel 4 5 G2 D2 RDS(on) = 0.050 Dynamic dv/dt Rating Fast Switching Top View Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniq
irf7309qpbf.pdf
PD - 96135A IRF7309QPbF HEXFET Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance N-CHANNEL MOSFET 1 8 N-Ch P-Ch l Dual N and P Channel MOSFET S1 D1 l Surface Mount 2 7 G1 D1 l Available in Tape & Reel VDSS 30V -30V 3 6 l 150 C Operating Temperature S2 D2 l Lead-Free 4 5 RDS(on) 0.050 0.10 G2 D2 P-CHANNEL MOSFET Description Top View These HEXF
irf7309.pdf
PD - 9.1243B IRF7309 PRELIMINARY HEXFET Power MOSFET Generation V Technology N-CHANNEL MOSFET Ultra Low On-Resistance 1 8 N-Ch P-Ch S1 D1 Dual N and P Channel Mosfet 2 7 G1 D1 Surface Mount VDSS 30V -30V Available in Tape & Reel 3 6 S2 D2 Dynamic dv/dt Rating 4 5 G2 D2 Fast Switching P-CHANNEL MOSFET RDS(on) 0.050 0.10 Top View Description Fifth Generation HEXFET
irf7303pbf.pdf
PD - 95177 IRF7303PbF HEXFET Power MOSFET l Generation V Technology l Ultra Low On-Resistance 1 8 l Dual N-Channel Mosfet S1 D1 VDSS = 30V l Surface Mount 2 7 G1 D1 l Available in Tape & Reel 3 6 S2 D2 l Dynamic dv/dt Rating 4 5 G2 D2 RDS(on) = 0.050 l Fast Switching l Lead-Free Top View Description Fifth Generation HEXFETs from International Rectifier utilize advanc
irf730as.pdf
PD-93772A SMPS MOSFET IRF730AS/L HEXFET Power MOSFET Applications VDSS Rds(on) max ID Switch Mode Power Supply (SMPS) Uninterruptable Power Supply 400V 1.0 5.5A High speed power switching Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and dynamic dv/dt Ruggedness Fully Characterized Capacitance and D 2 TO-262 Pak Avalanche
irf7306pbf.pdf
PD - 95178 IRF7306PbF HEXFET Power MOSFET l Generation V Technology l Ultra Low On-Resistance l Dual P-Channel Mosfet 1 8 S1 D1 VDSS = -30V l Surface Mount 2 7 G1 D1 l Available in Tape & Reel 3 6 S2 D2 l Dynamic dv/dt Rating 4 5 l Fast Switching G2 D2 RDS(on) = 0.10 l Lead-Free Top View Description Fifth Generation HEXFETs from International Rectifier utilize advance
irf7301.pdf
PD - 9.1238C IRF7301 HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance 1 8 S1 D1 Dual N-Channel Mosfet VDSS = 20V 2 7 G1 D1 Surface Mount 3 6 Available in Tape & Reel S2 D2 Dynamic dv/dt Rating 4 5 G2 D2 RDS(on) = 0.050 Fast Switching T op V iew Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing tec
irf7307pbf.pdf
PD - 95179 IRF7307PbF HEXFET Power MOSFET l Generation V Technology l Ultra Low On-Resistance N-CHANNEL MOSFET 1 8 l Dual N and P Channel Mosfet S1 D1 N-Ch P-Ch l Surface Mount 2 7 G1 D1 l Available in Tape & Reel 3 6 S2 D2 VDSS 20V -20V l Dynamic dv/dt Rating 4 5 G2 D2 l Fast Switching P-CHANNEL MOSFET l Lead-Free Top View RDS(on) 0.050 0.090 Description Fifth G
irf7309pbf-1.pdf
IRF7309TRPbF-1 HEXFET Power MOSFET N-CH P-CH V VDS 30 -30 V RDS(on) max 0.05 0.10 (@V = 10V) GS Qg (max) 25 25 nC ID SO-8 4.0 -3.0 A (@T = 25 C) A Features Benefits Industry-standard pinout SO-8 Package Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant, Halogen-Free Environmentally Friendlier MSL1, Ind
irf730pbf.pdf
PD - 94977 IRF730PbF Lead-Free 02/03/04 Document Number 91047 www.vishay.com 1 Downloaded from Elcodis.com electronic components distributor IRF730PbF Document Number 91047 www.vishay.com 2 Downloaded from Elcodis.com electronic components distributor IRF730PbF Document Number 91047 www.vishay.com 3 Downloaded from Elcodis.com electronic components distributor IRF730
irf7309trpbf-1.pdf
IRF7309TRPbF-1 HEXFET Power MOSFET N-CH P-CH V VDS 30 -30 V RDS(on) max 0.05 0.10 (@V = 10V) GS Qg (max) 25 25 nC ID SO-8 4.0 -3.0 A (@T = 25 C) A Features Benefits Industry-standard pinout SO-8 Package Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant, Halogen-Free Environmentally Friendlier MSL1, Ind
irf7307qpbf.pdf
PD - 96106 IRF7307QPbF HEXFET Power MOSFET l Advanced Process Technology N-CHANNEL MOSFET 1 8 l Ultra Low On-Resistance S1 D1 N-Ch P-Ch l Dual N and P Channel MOSFET 2 7 G1 D1 l Surface Mount 3 6 S2 D2 VDSS 20V -20V l Available in Tape & Reel 4 5 G2 D2 l 150 C Operating Temperature P-CHANNEL MOSFET l Automotive [Q101] Qualified Top View RDS(on) 0.050 0.090 l Lead-F
irf7306.pdf
PD - 9.1241C IRF7306 HEXFET Power MOSFET Generation V Technology 1 8 Ultra Low On-Resistance S1 D1 VDSS = -30V Dual P-Channel Mosfet 2 7 G1 D1 Surface Mount 3 6 S2 D2 Available in Tape & Reel 4 5 RDS(on) = 0.10 G2 D2 Dynamic dv/dt Rating Fast Switching Top View Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techni
irf7309ipbf.pdf
PD - 96086 IRF7309IPbF Lead-Free Description www.irf.com 1 07/07/06 IRF7309IPbF 2 www.irf.com IRF7309IPbF www.irf.com 3 IRF7309IPbF 4 www.irf.com IRF7309IPbF www.irf.com 5 IRF7309IPbF 6 www.irf.com IRF7309IPbF www.irf.com 7 IRF7309IPbF 8 www.irf.com IRF7309IPbF Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations Low Stray Inductance
irf7304.pdf
PD - 9.1240C IRF7304 HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance 1 8 S1 D1 Dual P-Channel Mosfet VDSS = -20V 2 7 G1 D1 Surface Mount 3 6 Available in Tape & Reel S2 D2 Dynamic dv/dt Rating 4 5 G2 D2 RDS(on) = 0.090 Fast Switching T op V iew Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing tec
irf7307.pdf
PD - 9.1242B IRF7307 HEXFET Power MOSFET Generation V Technology N -C HAN NEL M O SF ET 1 8 Ultra Low On-Resistance S1 D1 N-Ch P-Ch Dual N and P Channel Mosfet 2 7 G1 D1 Surface Mount 3 6 S2 D2 VDSS 20V -20V Available in Tape & Reel 4 5 G2 D2 Dynamic dv/dt Rating P-CH ANNEL MOSFET Fast Switching Top View RDS(on) 0.050 0.090 Description Fifth Generation HEXFE
irf730a.pdf
PD - 94976 SMPS MOSFET IRF730APbF HEXFET Power MOSFET Applications VDSS Rds(on) max ID l Switch Mode Power Supply (SMPS) l Uninterruptable Power Supply 400V 1.0 5.5A l High speed power switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanch
irf730 1.pdf
Philips Semiconductors Product specification PowerMOS transistor IRF730 Avalanche energy rated FEATURES SYMBOL QUICK REFERENCE DATA d Repetitive Avalanche Rated Fast switching VDSS = 400 V High thermal cycling performance Low thermal resistance ID = 7.2 A g RDS(ON) 1 s GENERAL DESCRIPTION PINNING SOT78 (TO220AB) N-channel, enhancement mode PIN DESCRIPTION
irf730.pdf
IRF730 N-channel 400V - 0.75 - 5.5A TO-220 Powermesh II Power MOSFET General features Type VDSS RDS(on) ID IRF730 400V
irf730a.pdf
Advanced Power MOSFET FEATURES BVDSS = 400 V Avalanche Rugged Technology RDS(on) = 1.0 Rugged Gate Oxide Technology Lower Input Capacitance ID = 5.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 400V Lower RDS(ON) 0.765 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic
irf730apbf sihf730a.pdf
IRF730A, SiHF730A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg results in Simple Drive VDS (V) 400 Available Requirement RDS(on) ( )VGS = 10 V 1.0 RoHS* Improved Gate, Avalanche and Dynamic dV/dt COMPLIANT Qg (Max.) (nC) 22 Ruggedness Qgs (nC) 5.8 Fully Characterized Capacitance and Avalanche Voltage and Current Qgd (nC) 9.3 Effecti
irf730s sihf730s.pdf
IRF730S, SiHF730S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 400 Definition Surface Mount RDS(on) ( )VGS = 10 V 1.0 Available in Tape and Reel Qg (Max.) (nC) 38 Dynamic dV/dt Rating Qgs (nC) 5.7 Repetitive Avalanche Rated Qgd (nC) 22 Fast Switching Ease of Paralleling Configuration Sing
irf730spbf sihf730s.pdf
IRF730S, SiHF730S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 400 Definition Surface Mount RDS(on) ( )VGS = 10 V 1.0 Available in Tape and Reel Qg (Max.) (nC) 38 Dynamic dV/dt Rating Qgs (nC) 5.7 Repetitive Avalanche Rated Qgd (nC) 22 Fast Switching Ease of Paralleling Configuration Sing
irf730 sihf730.pdf
IRF730, SiHF730 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 400 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 1.0 RoHS* Fast Switching Qg (Max.) (nC) 38 COMPLIANT Ease of Paralleling Qgs (nC) 5.7 Qgd (nC) 22 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D DES
irf730a sihf730a.pdf
IRF730A, SiHF730A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg results in Simple Drive VDS (V) 400 Available Requirement RDS(on) ( )VGS = 10 V 1.0 RoHS* Improved Gate, Avalanche and Dynamic dV/dt COMPLIANT Qg (Max.) (nC) 22 Ruggedness Qgs (nC) 5.8 Fully Characterized Capacitance and Avalanche Voltage and Current Qgd (nC) 9.3 Effecti
irf730alpbf irf730aspbf sihf730al sihf730as.pdf
IRF730AS, SiHF730AS, IRF730AL, SiHF730AL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 400 Definition RDS(on) (Max.) ( )VGS = 10 V 1.0 Low Gate Charge Qg Results in Simple Drive Requirement Qg (Max.) (nC) 22 Improved Gate, Avalanche and Dynamic dV/dt Qgs (nC) 5.8 Ruggedness Qgd (nC) 9.3 Fully Characteriz
auirf7309q.pdf
AUTOMOTIVE GRADE AUIRF7309Q Features N-CHANNEL MOSFET N-CH P-CH Advanced Planar Technology 1 8 S1 D1 Low On-Resistance 2 7 VDSS 30V -30V G1 D1 Logic Level Gate Drive 3 6 S2 D2 Dual N and P Channel MOSFET RDS(on) max. 0.05 0.10 4 5 G2 D2 Dynamic dv/dt Rating P-CHANNEL MOSFET 150 C Operating Temperature Top View ID 4.7A -3.5A
irf730 sihf730.pdf
IRF730, SiHF730 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 400 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 1.0 RoHS* Fast Switching Qg (Max.) (nC) 38 COMPLIANT Ease of Paralleling Qgs (nC) 5.7 Qgd (nC) 22 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D DES
hirf730.pdf
Spec. No. MOS200406 HI-SINCERITY Issued Date 2004.10.01 Revised Date 2005.04.22 MICROELECTRONICS CORP. Page No. 1/4 HIRF730 Series Pin Assignment HIRF730 / HIRF730F Tab N-CHANNEL POWER MOSFET 3-Lead Plastic TO-220AB Package Code E Pin 1 Gate Pin 2 & Tab Drain Description Pin 3 Source Third Generation HEXFETs from international Rectifier provide the designer with the
irf730.pdf
IRF730 RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ease of Paralleling D BVDSS 400V Fast Switching Characteristic RDS(ON) 1 Simple Drive Requirement ID 5.5A G S Description G TO-220(P) D APEC MOSFET provide the power designer with the best combination of fast S switching , lower on-resistance and reasonable cost.
irf730.pdf
IRF730 Rev.H Jul.-2018 DATA SHEET / Descriptions TO-220 N MOS N-CHANNEL MOSFET in a TO-220 Plastic Package. / Features , , Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for high efficiency swi
irf730s.pdf
SMD Type MOSFET N-Channel MOSFET IRF730S (KRF730S) Features VDS (V) =400V ID = 5.5 A (VGS = 10V) RDS(ON) 1 (VGS = 10V) Fast switching Low thermal resistance d g s Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 400 V Gate-Source Voltage VGS 20 Tc = 25 5.5 Continuous Drain Current ID Tc
irf7306qtr.pdf
IRF7306QTR www.VBsemi.tw Dual P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET 0.029 at VGS = - 10 V - 7.3 100 % UIS Tested RoHS - 30 17 nC COMPLIANT 0.039 at VGS = - 4.5 V - 6.3 APPLICATIONS Load Switches S1 S2 SO-8 S1 1 D1 8 G1 G2 G1 2 D1 7 S2 3 D2 6 G2 4 D2 5 Top V
irf7301tr.pdf
IRF7301TR www.VBsemi.tw Dual N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.025 at VGS = 4.5 V 7.1 TrenchFET Power MOSFET 20 0.035 at VGS = 2.5 V 6.0 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC SO-8 D1 D2 S1 1 D1 8 G1 2 D1 7 S2 3 D2 6 G1 G2 G2 4 D2 5
irf7306tr.pdf
IRF7306TR www.VBsemi.tw Dual P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET 0.029 at VGS = - 10 V - 7.3 100 % UIS Tested RoHS - 30 17 nC COMPLIANT 0.039 at VGS = - 4.5 V - 6.3 APPLICATIONS Load Switches S1 S2 SO-8 S1 1 D1 8 G1 G2 G1 2 D1 7 S2 3 D2 6 G2 4 D2 5 Top Vi
irf7309trpbf.pdf
IRF7309TRPBF www.VBsemi.tw N- and P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) Definition ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.018 at VGS = 10 V 8e 100 % Rg and UIS Tested N-Channel 30 0.020 at VGS = 8 V 8e 6.2 Compliant to RoHS Directive 2002/95/EC 0.024 at VGS = 4.5 V 8e 0.032 at
irf7304qtr.pdf
IRF7304QTR www.VBsemi.tw Dual P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET 0.029 at VGS = - 10 V - 7.3 100 % UIS Tested RoHS - 30 17 nC COMPLIANT 0.039 at VGS = - 4.5 V - 6.3 APPLICATIONS Load Switches S1 S2 SO-8 S1 1 D1 8 G1 G2 G1 2 D1 7 S2 3 D2 6 G2 4 D2 5 Top V
irf730fi.pdf
isc N-Channel MOSFET Transistor IRF730FI DESCRIPTION Drain Current I =3.5A@ T =25 D C Drain Source Voltage- V = 400V(Min) DSS Static Drain-Source On-Resistance R = 1.0 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed especially for high voltage,high speed applications,
irf730.pdf
MOSFET INCHANGE IRF730 N-channel mosfet transistor Features With TO-220 package 1 2 3 Simple drive requirements Fast switching VDSS=400V; RDS(ON) 1.0 ;ID=5.5A 1.gate 2.drain 3.source Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNIT VDSS Drain-source voltage (VGS=0) 400 V VGS Gate-source voltage 20 V ID Drain Current-continuous@ TC=25 5
irf730a.pdf
INCHANGE Semiconductor isc N-Channel Mosfet Transistor IRF730A FEATURES Drain Current I =5.5A@ T =25 D C Drain Source Voltage- V = 400V(Min) DSS Fast Switching Speed Low Drive Requirement Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switch Mode Power Supply Uninterruptable Power Supply High speed power swi
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Параметры MOSFET. Взаимосвязь и компромиссы
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