IRF7316PBF-1 - описание и поиск аналогов

IRF7316TRPbF-1 HEXFET Power MOSFET VDS -30 V 1 8 S1 D1 RDS(on) max 0.058 2 7 G1 D1 (@V = -10V) GS Qg (typical) 23 nC 3 6 S2 D2 ID 4 5 -4.9 A G2 D2 (@T = 25 C) A SO-8 Top View Features Benefits Industry-standard pinout SO-8 Package Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant, Halogen-Free En

PD - 95182 IRF7316PbF HEXFET Power MOSFET l Generation V Technology 1 8 S1 D1 l Ultra Low On-Resistance VDSS = -30V 2 7 l Dual P-Channel MOSFET G1 D1 l Surface Mount 3 6 S2 D2 l Fully Avalanche Rated 4 5 G2 D2 l Lead-Free RDS(on) = 0.058 Top View Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extreme

PD - 96126 IRF7316QPbF HEXFET Power MOSFET l Advanced Process Technology 1 8 l Ultra Low On-Resistance S1 D1 VDSS = -30V l Dual P- Channel MOSFET 2 7 G1 D1 l Surface Mount 3 6 S2 D2 l Available in Tape & Reel l 150 C Operating Temperature 4 5 G2 D2 RDS(on) = 0.058 l Automotive [Q101] Qualified l Lead-Free Top View Description Specifically designed for Automotive appli

AUTOMOTIVE GRADE AUIRF7316Q VDSS Features 1 8 S1 D1 -30V Advanced Planar Technology 2 7 G1 D1 RDS(on) typ. 0.042 3 6 Low On-Resistance S2 D2 4 5 Logic Level Gate Drive D2 max. G2 0.058 Dual P Channel MOSFET Top View ID -4.9A Surface Mount Available in Tape & Reel 150 C Operating Temperature Lead-Free, RoHS Complian

PD - 9.1505A IRF7316 PRELIMINARY HEXFET Power MOSFET Generation V Technology 1 8 S1 D1 Ultra Low On-Resistance VDSS = -30V Dual P-Channel MOSFET 2 7 G1 D1 Surface Mount 3 6 S2 D2 Fully Avalanche Rated 4 5 G2 D2 RDS(on) = 0.058 T op V iew Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely l

PD - 9.1505A IRF7316 PRELIMINARY HEXFET Power MOSFET Generation V Technology 1 8 S1 D1 Ultra Low On-Resistance VDSS = -30V Dual P-Channel MOSFET 2 7 G1 D1 Surface Mount 3 6 S2 D2 Fully Avalanche Rated 4 5 G2 D2 RDS(on) = 0.058 T op V iew Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely l

PD - 96126A IRF7316QPbF HEXFET Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance 1 8 S1 D1 l Dual P- Channel MOSFET VDSS = -30V 2 7 l Surface Mount G1 D1 l Available in Tape & Reel 3 6 S2 D2 l 150 C Operating Temperature 4 5 G2 D2 l Lead-Free RDS(on) = 0.058 Top View Description These HEXFET Power MOSFET's in a Dual SO-8 package utilize the laste

AUTOMOTIVE GRADE AUIRF7316Q VDSS Features 1 8 S1 D1 -30V Advanced Planar Technology 2 7 G1 D1 RDS(on) typ. 0.042 3 6 Low On-Resistance S2 D2 4 5 Logic Level Gate Drive D2 max. G2 0.058 Dual P Channel MOSFET Top View ID -4.9A Surface Mount Available in Tape & Reel 150 C Operating Temperature Lead-Free, RoHS Complian