IRF7316PBF-1 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IRF7316PBF-1
Тип транзистора: MOSFET
Полярность: P
Максимальная рассеиваемая мощность (Pd): 2 W
Предельно допустимое напряжение сток-исток |Uds|: 30 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 1 V
Максимально допустимый постоянный ток стока |Id|: 4.9 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 23 nC
Время нарастания (tr): 13 ns
Выходная емкость (Cd): 380 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.058 Ohm
Тип корпуса: SO-8
Аналог (замена) для IRF7316PBF-1
IRF7316PBF-1 Datasheet (PDF)
irf7316pbf-1.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
IRF7316TRPbF-1HEXFET Power MOSFETVDS -30 V1 8S1 D1RDS(on) max 0.058 2 7G1 D1(@V = -10V)GSQg (typical) 23 nC 3 6S2 D2ID 4 5-4.9 AG2 D2(@T = 25C)ASO-8Top ViewFeatures BenefitsIndustry-standard pinout SO-8 Package Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techniques Easier ManufacturingRoHS Compliant, Halogen-Free En
irf7316pbf.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
PD - 95182IRF7316PbFHEXFET Power MOSFETl Generation V Technology1 8S1 D1l Ultra Low On-ResistanceVDSS = -30V2 7l Dual P-Channel MOSFETG1 D1l Surface Mount3 6S2 D2l Fully Avalanche Rated4 5G2 D2l Lead-Free RDS(on) = 0.058Top ViewDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextreme
irf7316qpbf.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
PD - 96126IRF7316QPbFHEXFET Power MOSFETl Advanced Process Technology1 8l Ultra Low On-Resistance S1 D1VDSS = -30Vl Dual P- Channel MOSFET2 7G1 D1l Surface Mount3 6S2 D2l Available in Tape & Reell 150C Operating Temperature 4 5G2 D2RDS(on) = 0.058l Automotive [Q101] Qualifiedl Lead-FreeTop ViewDescriptionSpecifically designed for Automotive appli
auirf7316q.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
AUTOMOTIVE GRADE AUIRF7316Q VDSS Features 1 8S1 D1 -30V Advanced Planar Technology 2 7G1 D1RDS(on) typ. 0.0423 6 Low On-Resistance S2 D24 5 Logic Level Gate Drive D2 max. G20.058 Dual P Channel MOSFET Top ViewID -4.9A Surface Mount Available in Tape & Reel 150C Operating Temperature Lead-Free, RoHS Complian
irf7316.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
PD - 9.1505AIRF7316PRELIMINARYHEXFET Power MOSFET Generation V Technology1 8S1 D1 Ultra Low On-ResistanceVDSS = -30V Dual P-Channel MOSFET 2 7G1 D1 Surface Mount3 6S2 D2 Fully Avalanche Rated4 5G2 D2RDS(on) = 0.058T op V iewDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely l
irf7316s.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
PD - 9.1505AIRF7316PRELIMINARYHEXFET Power MOSFET Generation V Technology1 8S1 D1 Ultra Low On-ResistanceVDSS = -30V Dual P-Channel MOSFET 2 7G1 D1 Surface Mount3 6S2 D2 Fully Avalanche Rated4 5G2 D2RDS(on) = 0.058T op V iewDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely l
irf7316qpbf.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
PD - 96126AIRF7316QPbFHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-Resistance1 8S1 D1l Dual P- Channel MOSFETVDSS = -30V2 7l Surface Mount G1 D1l Available in Tape & Reel3 6S2 D2l 150C Operating Temperature4 5G2 D2l Lead-FreeRDS(on) = 0.058Top ViewDescriptionThese HEXFET Power MOSFET's in a DualSO-8 package utilize the laste
auirf7316q.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
AUTOMOTIVE GRADE AUIRF7316Q VDSS Features 1 8S1 D1 -30V Advanced Planar Technology 2 7G1 D1RDS(on) typ. 0.0423 6 Low On-Resistance S2 D24 5 Logic Level Gate Drive D2 max. G20.058 Dual P Channel MOSFET Top ViewID -4.9A Surface Mount Available in Tape & Reel 150C Operating Temperature Lead-Free, RoHS Complian
Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: IRF7379QPBF
History: IRF7379QPBF
![IRF7316PBF-1](https://alltransistors.com/images/us.png)
![IRF7316PBF-1](https://alltransistors.com/images/es.png)
![IRF7316PBF-1](https://alltransistors.com/images/ru.png)
Список транзисторов
Обновления
MOSFET: BSS123K2 | BRU26N50 | BRU24N50 | BRI7N65 | BRI7N60 | BRI740 | BRI65R380C | BRI5N65 | BRI50N06 | BRI4N70 | BRI2N70 | BRGN250N65YK | BRFL8N65 | BRFL7N65S | BRFL70R360C | BRFL65R380C