IRF7324TRPbF-1HEXFET Power MOSFETVDS -20 V1 8RDS(on) max S1 D10.018 2 7(@V = -4.5V)GSG1 D1Qg (typical) 42 nC3 6S2 D2ID 4 5-9.0 AG2 D2(@T = 25C)ASO-8Top ViewFeatures BenefitsIndustry-standard pinout SO-8 Package Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techniques Easier ManufacturingRoHS Compliant, Halogen-Free En

PD - 95460IRF7324PbFHEXFET Power MOSFET Trench Technology Ultra Low On-Resistance 1 8S1 D1VDSS = -20V Dual P-Channel MOSFET2 7G1 D1 Low Profile (

PD -93799AIRF7324HEXFET Power MOSFET Trench Technology Ultra Low On-Resistance 1 8S1 D1VDSS = -20V Dual P-Channel MOSFET2 7G1 D1 Low Profile (

PD-95309AIRF7324D1PbFFETKY MOSFET / Schottky Diodel Co-packaged HEXFET Power1 8A KMOSFET and Schottky DiodeVDSS = -20V2 7l Ideal for Mobile Phone Applications A Kl Generation V Technology3 6S DRDS(on) = 0.27l SO-8 Footprint45G Dl Lead-FreeSchottky Vf = 0.39VTop ViewDescriptionThe FETKYTM family of co-packaged HEXFETs and Schottky diodes offer

PD- 91789IRF7324D1PRELIMINARY FETKY MOSFET / Schottky Diode Co-packaged HEXFET Power1 8A KMOSFET and Schottky DiodeVDSS = -20V2 7 Ideal for Mobile Phone Applications A K Generation V Technology3 6S DRDS(on) = 0.18 SO-8 Footprint45G DSchottky Vf = 0.39VTop ViewDescriptionThe FETKYTM family of co-packaged HEXFETs and Schottk

IRF7324TRwww.VBsemi.twDual P-Channel 20V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.018 at VGS = - 4.5 V- 8.9 TrenchFET Power MOSFET0.022 at VGS = - 2.5 V- 20 - 8.1 Advanced High Cell Density Process0.030 at VGS = - 1.8 V- 3.6 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS