IRF7342QPBF - аналоги, параметры транзистора - Справочник транзисторов

IRF7342QPBF даташит

..1. Size:183K international rectifier
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PD - 96109 IRF7342QPbF HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance 1 8 S1 D1 Dual P Channel MOSFET VDSS = -55V 2 7 G1 D1 Surface Mount 3 6 Available in Tape & Reel S2 D2 150 C Operating Temperature 4 5 G2 D2 RDS(on) = 0.105 Automotive [Q101] Qualified Lead-Free Top View Description Specifically designed for Automotive applications,

6.1. Size:172K 1
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PD - 97640 AUTOMOTIVE GRADE AUIRF7342Q Advanced Planar Technology Low On-Resistance HEXFET Power MOSFET Dual P-Channel MOSFET Dynamic dV/dT Rating 1 8 S1 D1 V(BR)DSS -55V 150 C Operating Temperature 2 7 G1 D1 Fast Switching 3 6 S2 D2 RDS(on) max. 0.105 Fully Avalanche Rated 4 5 G2 D2 Lead-Free, RoHS Compliant ID -3.4A Top View Autom

6.2. Size:267K infineon
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AUTOMOTIVE GRADE AUIRF7342Q VDSS 1 8 S1 D1 Features -55V 2 7 G1 D1 Advanced Planar Technology 3 6 RDS(on) max. S2 D2 Low On-Resistance 0.105 4 5 G2 D2 Logic Level Gate Drive ID -3.4A Dual P Channel MOSFET Top View Dynamic dv/dt Rating 150 C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free, RoHS

6.3. Size:2614K cn vbsemi
irf7342qtr.pdf pdf_icon

IRF7342QTR www.VBsemi.tw Dual P-Channel 6 0-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET 0.059 at VGS = - 10 V - 5.3 100 % UIS Tested RoHS - 60 17 nC COMPLIANT 0.069 at VGS = - 4.5 V - 5.0 APPLICATIONS Load Switches S1 S2 SO-8 S1 1 D1 8 G1 G2 G1 2 D1 7 S2 3 D2 6 G2 4 D2 5 Top

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