Справочник MOSFET. IRL2703S

 

IRL2703S MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IRL2703S
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 45 W
   Предельно допустимое напряжение сток-исток |Uds|: 30 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 16 V
   Пороговое напряжение включения |Ugs(th)|: 1(min) V
   Максимально допустимый постоянный ток стока |Id|: 24 A
   Максимальная температура канала (Tj): 175 °C
   Общий заряд затвора (Qg): 15(max) nC
   Время нарастания (tr): 140 ns
   Выходная емкость (Cd): 210 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.04 Ohm
   Тип корпуса: TO263

 Аналог (замена) для IRL2703S

 

 

IRL2703S Datasheet (PDF)

 ..1. Size:1187K  international rectifier
 irl2703spbf.pdf

IRL2703S IRL2703S

PD- 95586IRL2703SPbF Lead-Freewww.irf.com 107/20/04IRL2703SPbF2 www.irf.comIRL2703SPbFwww.irf.com 3IRL2703SPbF4 www.irf.comIRL2703SPbFwww.irf.com 5IRL2703SPbF6 www.irf.comIRL2703SPbFPeak Diode Recovery dv/dt Test Circuit+Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage InductanceCurrent Transformer-+

 ..2. Size:134K  international rectifier
 irl2703s.pdf

IRL2703S IRL2703S

PD - 9.1360IRL2703SPRELIMINARYHEXFET Power MOSFET Logic-Level Gate DriveD Advanced Process TechnologyVDSS = 30V Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 0.04 Fast SwitchingG Fully Avalanche RatedID = 24ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieve thelowest possible

 7.1. Size:217K  international rectifier
 irl2703pbf.pdf

IRL2703S IRL2703S

PD - 95368IRL2703PbF Lead-Freewww.irf.com 16/17/04IRL2703PbF2 www.irf.comIRL2703PbFwww.irf.com 3IRL2703PbF4 www.irf.comIRL2703PbFwww.irf.com 5IRL2703PbF6 www.irf.comIRL2703PbFwww.irf.com 7IRL2703PbFTO-220AB Package OutlineDimensions are shown in millimeters (inches)10.54 (.415) - B -3.78 (.149)10.29 (.405)2.87 (.113) 4.69 (.185)3.54 (.13

 7.2. Size:108K  international rectifier
 irl2703.pdf

IRL2703S IRL2703S

PD - 9.1359AIRL2703HEXFET Power MOSFET Logic-Level Gate DriveD Advanced Process TechnologyVDSS = 30V Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 0.04 Fast SwitchingG Fully Avalanche RatedID = 24ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieve thelowest possible on-resistanc

 7.3. Size:217K  infineon
 irl2703pbf.pdf

IRL2703S IRL2703S

PD - 95368IRL2703PbF Lead-Freewww.irf.com 16/17/04IRL2703PbF2 www.irf.comIRL2703PbFwww.irf.com 3IRL2703PbF4 www.irf.comIRL2703PbFwww.irf.com 5IRL2703PbF6 www.irf.comIRL2703PbFwww.irf.com 7IRL2703PbFTO-220AB Package OutlineDimensions are shown in millimeters (inches)10.54 (.415) - B -3.78 (.149)10.29 (.405)2.87 (.113) 4.69 (.185)3.54 (.13

 7.4. Size:251K  inchange semiconductor
 irl2703.pdf

IRL2703S IRL2703S

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRL2703 IIRL2703FEATURESStatic drain-source on-resistance:RDS(on) 0.04Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM

Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
Back to Top