IRL3103 - описание и поиск аналогов

PD - 94994 IRL3103PbF HEXFET Power MOSFET l Advanced Process Technology D l Ultra Low On-Resistance VDSS = 30V l Dynamic dv/dt Rating l 175 C Operating Temperature RDS(on) = 12m l Fast Switching G l Fully Avalanche Rated ID = 64A l Lead-Free S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely

PD - 91337 IRL3103 HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 30V Dynamic dv/dt Rating 175 C Operating Temperature RDS(on) = 12m Fast Switching G Fully Avalanche Rated ID = 64A S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance

isc N-Channel MOSFET Transistor IRL3103 IIRL3103 FEATURES Static drain-source on-resistance RDS(on) 12m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Combine with the fast switching speed and ruggedized device design,provide the designer with an extrem

PD 9.1660 IRL3103D2 PRELIMINARY FETKYTM MOSFET & SCHOTTKY RECTIFIER D Copackaged HEXFET Power MOSFET and Schottky Diode VDSS = 30V Generation 5 Technology Logic Level Gate Drive RDS(on) = 0.014 Minimize Circuit Inductance G Ideal For Synchronous Regulator Application ID = 54A S Description The FETKY family of copackaged HEXFET power MOSFETs and Schottky Diodes offer

PD- 9.1558A IRL3103D1S FETKYTM MOSFET & SCHOTTKY RECTIFIER Co-packaged HEXFET Power MOSFET D and Schottky Diode VDSS = 30V Generation 5 Technology Logic Level Gate Drive RDS(on) = 0.014 Minimize Circuit Inductance G Ideal For Synchronous Regulator Application ID = 64A S Description The FETKY family of co-packaged HEXFET power MOSFETs and Schottky Diodes offer the desi

PD-95435 IRL3103D2PbF FETKYTM MOSFET & SCHOTTKY RECTIFIER l Copackaged HEXFET Power MOSFET D and Schottky Diode VDSS = 30V l Generation 5 Technology l Logic Level Gate Drive RDS(on) = 0.014 l Minimize Circuit Inductance G l Ideal For Synchronous Regulator Application ID = 54A l Lead-Free S Description The FETKY family of copackaged HEXFET power MOSFETs and Schottky Diodes

PD 9.1608C IRL3103D1 FETKYTM MOSFET & SCHOTTKY RECTIFIER Copackaged HEXFET Power MOSFET D and Schottky Diode VDSS = 30V Generation 5 Technology Logic Level Gate Drive RDS(on) = 0.014 Minimize Circuit Inductance G Ideal For Synchronous Regulator Application ID = 64A S Description The FETKY family of copackaged HEXFET power MOSFETs and Schottky Diodes offer the designer

PD - 94162 IRL3103S IRL3103L Advanced Process Technology Surface Mount (IRL3103S) HEXFET Power MOSFET Low-profile through-hole (IRL3103L) D 175 C Operating Temperature VDSS = 30V Fast Switching Fully Avalanche Rated RDS(on) = 12m Description G Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to ID = 64A achieve ext

PD - 95150 IRL3103SPbF IRL3103LPbF Advanced Process Technology Surface Mount (IRL3103S) HEXFET Power MOSFET Low-profile through-hole (IRL3103L) 175 C Operating Temperature D VDSS = 30V Fast Switching Fully Avalanche Rated RDS(on) = 12m Lead-Free G Description Advanced HEXFET Power MOSFETs from International ID = 64A Rectifier utilize advanced processing technique

isc N-Channel MOSFET Transistor IRL3103S FEATURES With TO-263( D2PAK ) packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a S

isc N-Channel MOSFET Transistor IRL3103S FEATURES With TO-263( D2PAK ) packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a S