Справочник MOSFET. SIA425EDJ

 

SIA425EDJ MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: SIA425EDJ
   Тип транзистора: MOSFET
   Полярность: P
   Максимальная рассеиваемая мощность (Pd): 2.9 W
   Предельно допустимое напряжение сток-исток |Uds|: 20 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 12 V
   Пороговое напряжение включения |Ugs(th)|: 1 V
   Максимально допустимый постоянный ток стока |Id|: 4.5 A
   Максимальная температура канала (Tj): 150 °C
   Время нарастания (tr): 5 ns
   Сопротивление сток-исток открытого транзистора (Rds): 0.06 Ohm
   Тип корпуса: SC-70-6L

 Аналог (замена) для SIA425EDJ

 

 

SIA425EDJ Datasheet (PDF)

 ..1. Size:109K  vishay
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SiA425EDJVishay SiliconixP-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition TrenchFET Power MOSFET0.060 at VGS = - 4.5 V - 4.5a New Thermally Enhanced PowerPAK0.065 at VGS = - 3.6 V - 4.5a- 20 4.9 nCSC-70 Package0.080 at VGS = - 2.5 V - 4.5a- Small Footpri

 9.1. Size:200K  vishay
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SiA421DJVishay SiliconixP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) Qg (Typ.) New Thermally Enhanced PowerPAKSC-70 Package0.035 at VGS = - 10 V - 12a- 30 10 nC- Small Footprint Area0.056 at VGS = - 4.5 V - 12a- Low On-Resistance Material categorization:For definitions of compliance please

 9.2. Size:222K  vishay
 sia427adj.pdf

SIA425EDJ SIA425EDJ

New ProductSiA427ADJVishay SiliconixP-Channel 8 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () (Max.) ID (A) Qg (Typ.) Thermally Enhanced PowerPAK SC-70 Package0.016 at VGS = - 4.5 V - 12a- Small Footprint Area0.0215 at VGS = - 2.5 V - 12a - Low On-Resistance 100 % Rg Tested- 8 0.026 at VGS = - 1.8 V - 12a 30 nC

 9.3. Size:200K  vishay
 sia429djt.pdf

SIA425EDJ SIA425EDJ

New ProductSiA429DJTVishay SiliconixP-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition TrenchFET Power MOSFET0.0205 at VGS = - 4.5 V - 12a New Thermally Enhanced PowerPAK0.027 at VGS = - 2.5 V - 12aSC-70 Package- 20 24.5 nC0.036 at VGS = - 1.8 V - 12a - S

 9.4. Size:154K  vishay
 sia429dj.pdf

SIA425EDJ SIA425EDJ

New ProductSiA429DJTVishay SiliconixP-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition TrenchFET Power MOSFET0.0205 at VGS = - 4.5 V - 12a New Thermally Enhanced PowerPAK0.027 at VGS = - 2.5 V - 12aSC-70 Package- 20 24.5 nC0.036 at VGS = - 1.8 V - 12a - S

 9.5. Size:222K  vishay
 sia427dj.pdf

SIA425EDJ SIA425EDJ

New ProductSiA427DJVishay SiliconixP-Channel 8 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) Qg (Typ.) New Thermally Enhanced PowerPAKSC-70 Package0.016 at VGS = - 4.5 V - 12a- Small Footprint Area0.0215 at VGS = - 2.5 V - 12a- Low On-Resistance- 8 0.026 at VGS = - 1.8 V - 12a 30 nC 100 % Rg Tested Mate

 9.6. Size:217K  vishay
 sia426dj.pdf

SIA425EDJ SIA425EDJ

New ProductSiA426DJVishay SiliconixN-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.0236 at VGS = 10 V 4.5 New Thermally Enhanced PowerPAKRoHS0.0263 at VGS = 4.5 V 20 4.5 7.9 nCCOMPLIANTSC-70 Package0.0361 at VGS = 2.5 V - Small Footprint Area4.5- Low On-Resistanc

Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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