SIA461DJ MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: SIA461DJ
Тип транзистора: MOSFET
Полярность: P
Максимальная рассеиваемая мощность (Pd): 3.4 W
Предельно допустимое напряжение сток-исток |Uds|: 20 V
Предельно допустимое напряжение затвор-исток |Ugs|: 8 V
Пороговое напряжение включения |Ugs(th)|: 1 V
Максимально допустимый постоянный ток стока |Id|: 8.3 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 30 nC
Время нарастания (tr): 22 ns
Выходная емкость (Cd): 210 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.033 Ohm
Тип корпуса: SC-70-6L
SIA461DJ Datasheet (PDF)
sia461dj.pdf
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New ProductSiA461DJVishay SiliconixP-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max. Thermally Enhanced PowerPAK SC-70 PackageID (A)a Qg (Typ.)- Small Footprint Area0.033 at VGS = - 4.5 V - 12- Low On-Resistance Material categorization: 0.042 at VGS = - 2.5 V - 12 18 nC- 20For definitions of complia
sia469dj.pdf
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SiA469DJwww.vishay.comVishay SiliconixP-Channel 30 V (D-S) MOSFETFEATURESPowerPAK SC-70-6L SingleD TrenchFET Gen III p-channel power MOSFETD 6 Thermally enhanced PowerPAK SC-70 packageS 54 100% Rg tested Material categorization: for definitions of compliance please see www.vishay.com/doc?99912S172 DAPPLICATIONS3 D S1G Load
sia465edj.pdf
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SiA465EDJwww.vishay.comVishay SiliconixP-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) RDS(on) () MAX. ID (A) Qg (TYP.) Thermally enhanced PowerPAK SC-70 package0.0165 at VGS = -4.5 V -12 a- Small footprint area-20 0.0185 at VGS = -3.7 V -12 a 23 nC- Low on-resistance0.0300 at VGS = -2.5 V -12 a 100 % Rg tested
sia466edj.pdf
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SiA466EDJwww.vishay.comVishay SiliconixN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) RDS(on) () MAX. ID (A) a Qg (TYP.) Thermally enhanced PowerPAK SC-70 package0.0095 at VGS = 10 V 25- Small footprint area20 0.0111 at VGS = 6 V 25 6.3 nC- Low on-resistance0.0130 at VGS = 4.5 V 25 Typical ESD protection: 2500 V (HBM)
sia462dj.pdf
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New Product SiA462DJVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () (Max.)ID (A)a Qg (Typ.) 100 % Rg Tested0.018 at VGS = 10 V Material categorization:12For definitions of compliance please see0.020 at VGS = 6 V 30 12 5 nCwww.vishay.com/doc?999120.022 at VGS = 4.5 V 12APPLICATIONS
sia468dj.pdf
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SiA468DJwww.vishay.comVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Gen IV power MOSFETVDS (V) RDS(on) () (MAX.) ID (A) a Qg (TYP.) 100 % Rg tested0.0084 at VGS = 10 V 37.830 8.2 nC The highest continuous drain current capability 0.0114 at VGS = 4.5 V 32.5in its class Very low RDS-Qg FOM and Qgd elevate efficiencyPowe
Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
![SIA461DJ](https://alltransistors.com/images/us.png)
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Список транзисторов
Обновления
MOSFET: BSS123K2 | BRU26N50 | BRU24N50 | BRI7N65 | BRI7N60 | BRI740 | BRI65R380C | BRI5N65 | BRI50N06 | BRI4N70 | BRI2N70 | BRGN250N65YK | BRFL8N65 | BRFL7N65S | BRFL70R360C | BRFL65R380C