Справочник MOSFET. IRL3103L

 

IRL3103L MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IRL3103L
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 94 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 16 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 64 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 120 ns
   Cossⓘ - Выходная емкость: 650 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.012 Ohm
   Тип корпуса: TO262

 Аналог (замена) для IRL3103L

 

 

IRL3103L Datasheet (PDF)

 ..1. Size:125K  international rectifier
irl3103s irl3103l.pdf

IRL3103L
IRL3103L

PD - 94162IRL3103SIRL3103L Advanced Process Technology Surface Mount (IRL3103S)HEXFET Power MOSFET Low-profile through-hole (IRL3103L)D 175C Operating TemperatureVDSS = 30V Fast Switching Fully Avalanche RatedRDS(on) = 12mDescriptionGAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques toID = 64Aachieve ext

 ..2. Size:649K  international rectifier
irl3103lpbf irl3103spbf.pdf

IRL3103L
IRL3103L

PD - 95150IRL3103SPbFIRL3103LPbF Advanced Process Technology Surface Mount (IRL3103S)HEXFET Power MOSFET Low-profile through-hole (IRL3103L) 175C Operating Temperature DVDSS = 30V Fast Switching Fully Avalanche RatedRDS(on) = 12m Lead-FreeGDescriptionAdvanced HEXFET Power MOSFETs from InternationalID = 64ARectifier utilize advanced processing technique

 7.1. Size:184K  international rectifier
irl3103pbf.pdf

IRL3103L
IRL3103L

PD - 94994IRL3103PbFHEXFET Power MOSFETl Advanced Process TechnologyDl Ultra Low On-ResistanceVDSS = 30Vl Dynamic dv/dt Ratingl 175C Operating TemperatureRDS(on) = 12ml Fast SwitchingGl Fully Avalanche RatedID = 64Al Lead-FreeSDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieveextremely

 7.2. Size:116K  international rectifier
irl3103d2.pdf

IRL3103L
IRL3103L

PD 9.1660IRL3103D2PRELIMINARYFETKYTM MOSFET & SCHOTTKY RECTIFIERD Copackaged HEXFET Power MOSFETand Schottky DiodeVDSS = 30V Generation 5 Technology Logic Level Gate DriveRDS(on) = 0.014 Minimize Circuit InductanceG Ideal For Synchronous Regulator ApplicationID = 54ASDescriptionThe FETKY family of copackaged HEXFET powerMOSFETs and Schottky Diodes offer

 7.3. Size:214K  international rectifier
irl3103.pdf

IRL3103L
IRL3103L

PD - 91337IRL3103HEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 30V Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 12m Fast SwitchingG Fully Avalanche RatedID = 64ASDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieveextremely low on-resistance

 7.4. Size:126K  international rectifier
irl3103d1s.pdf

IRL3103L
IRL3103L

PD- 9.1558AIRL3103D1SFETKYTM MOSFET & SCHOTTKY RECTIFIER Co-packaged HEXFET Power MOSFETDand Schottky DiodeVDSS = 30V Generation 5 Technology Logic Level Gate DriveRDS(on) = 0.014 Minimize Circuit InductanceG Ideal For Synchronous Regulator ApplicationID = 64ASDescriptionThe FETKY family of co-packaged HEXFET powerMOSFETs and Schottky Diodes offer the desi

 7.5. Size:150K  international rectifier
irl3103d2pbf.pdf

IRL3103L
IRL3103L

PD-95435IRL3103D2PbFFETKYTM MOSFET & SCHOTTKY RECTIFIERl Copackaged HEXFET Power MOSFET Dand Schottky DiodeVDSS = 30Vl Generation 5 Technologyl Logic Level Gate DriveRDS(on) = 0.014l Minimize Circuit InductanceGl Ideal For Synchronous Regulator ApplicationID = 54Al Lead-FreeSDescriptionThe FETKY family of copackaged HEXFET powerMOSFETs and Schottky Diodes

 7.6. Size:94K  international rectifier
irl3103d1.pdf

IRL3103L
IRL3103L

PD 9.1608CIRL3103D1FETKYTM MOSFET & SCHOTTKY RECTIFIER Copackaged HEXFET Power MOSFET Dand Schottky DiodeVDSS = 30V Generation 5 Technology Logic Level Gate DriveRDS(on) = 0.014 Minimize Circuit InductanceG Ideal For Synchronous Regulator ApplicationID = 64ASDescriptionThe FETKY family of copackaged HEXFET powerMOSFETs and Schottky Diodes offer the designer

 7.7. Size:214K  infineon
irl3103.pdf

IRL3103L
IRL3103L

PD - 91337IRL3103HEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 30V Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 12m Fast SwitchingG Fully Avalanche RatedID = 64ASDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieveextremely low on-resistance

 7.8. Size:251K  inchange semiconductor
irl3103s.pdf

IRL3103L
IRL3103L

isc N-Channel MOSFET Transistor IRL3103SFEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aS

 7.9. Size:245K  inchange semiconductor
irl3103.pdf

IRL3103L
IRL3103L

isc N-Channel MOSFET Transistor IRL3103IIRL3103FEATURESStatic drain-source on-resistance:RDS(on) 12mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONCombine with the fast switching speed and ruggedized devicedesign,provide the designer with an extrem

 7.10. Size:252K  inchange semiconductor
irl3103s(2).pdf

IRL3103L
IRL3103L

isc N-Channel MOSFET Transistor IRL3103SFEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aS

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