IRL3202S - описание и поиск аналогов

 

Аналоги IRL3202S. Основные параметры


   Наименование производителя: IRL3202S
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 69 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 10 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 48 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 100 ns
   Cossⓘ - Выходная емкость: 800 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.016 Ohm
   Тип корпуса: TO263
 

 Аналог (замена) для IRL3202S

   - подбор ⓘ MOSFET транзистора по параметрам

 

IRL3202S даташит

 ..1. Size:125K  international rectifier
 irl3202s.pdf pdf_icon

IRL3202S

PD 9.1675B IRL3202S PRELIMINARY HEXFET Power MOSFET Advanced Process Technology D Surface Mount VDSS = 20V Optimized for 4.5V-7.0V Gate Drive Ideal for CPU Core DC-DC Converters RDS(on) = 0.016W Fast Switching G Description ID = 48A S These HEXFET Power MOSFETs were designed specifically to meet the demands of CPU core DC-DC converters in the PC environment. Advanced pr

 7.1. Size:132K  international rectifier
 irl3202pbf.pdf pdf_icon

IRL3202S

PD -95659 IRL3202PbF HEXFET Power MOSFET l Advanced Process Technology l Optimized for 4.5V-7.0V Gate Drive D l Ideal for CPU Core DC-DC Converters VDSS = 20V l Fast Switching l Lead-Free RDS(on) = 0.016 G Description ID = 48A These HEXFET Power MOSFETs were designed S specifically to meet the demands of CPU core DC-DC converters in the PC environment. Advanced processing

 7.2. Size:89K  international rectifier
 irl3202.pdf pdf_icon

IRL3202S

PD 9.1695A IRL3202 PRELIMINARY HEXFET Power MOSFET Advanced Process Technology D Optimized for 4.5V-7.0V Gate Drive VDSS = 20V Ideal for CPU Core DC-DC Converters Fast Switching RDS(on) = 0.016W G Description ID = 48A These HEXFET Power MOSFETs were designed S specifically to meet the demands of CPU core DC-DC converters in the PC environment. Advanced processing techniq

 9.1. Size:126K  international rectifier
 irl3215.pdf pdf_icon

IRL3202S

PD- 91792 IRL3215 HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 150V Dynamic dv/dt Rating 175 C Operating Temperature RDS(on) = 0.166 Fast Switching G Fully Avalanche Rated ID = 12A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... IRL3102S , IRL3103 , IRL3103D1 , IRL3103D1S , IRL3103D2 , IRL3103L , IRL3103S , IRL3202 , 2N7002 , IRL3215 , IRL3302 , IRL3302S , IRL3303 , IRL3303L , IRL3303S , IRL3402 , IRL3402S .

 

 

 


 
↑ Back to Top
.