IRL3202S - Даташиты. Аналоги. Основные параметры
Наименование производителя: IRL3202S
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 69 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 10 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 48 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 100 ns
Cossⓘ - Выходная емкость: 800 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.016 Ohm
Тип корпуса: TO263
Аналог (замена) для IRL3202S
IRL3202S Datasheet (PDF)
irl3202s.pdf

PD 9.1675BIRL3202SPRELIMINARYHEXFET Power MOSFET Advanced Process TechnologyD Surface MountVDSS = 20V Optimized for 4.5V-7.0V Gate Drive Ideal for CPU Core DC-DC ConvertersRDS(on) = 0.016W Fast SwitchingGDescription ID = 48ASThese HEXFET Power MOSFETs were designedspecifically to meet the demands of CPU core DC-DCconverters in the PC environment. Advancedpr
irl3202pbf.pdf

PD -95659IRL3202PbFHEXFET Power MOSFETl Advanced Process Technologyl Optimized for 4.5V-7.0V Gate DriveDl Ideal for CPU Core DC-DC Converters VDSS = 20Vl Fast Switchingl Lead-FreeRDS(on) = 0.016GDescriptionID = 48AThese HEXFET Power MOSFETs were designedSspecifically to meet the demands of CPU core DC-DCconverters in the PC environment. Advancedprocessing
irl3202.pdf

PD 9.1695AIRL3202PRELIMINARYHEXFET Power MOSFET Advanced Process TechnologyD Optimized for 4.5V-7.0V Gate DriveVDSS = 20V Ideal for CPU Core DC-DC Converters Fast SwitchingRDS(on) = 0.016WGDescriptionID = 48AThese HEXFET Power MOSFETs were designedSspecifically to meet the demands of CPU core DC-DCconverters in the PC environment. Advancedprocessing techniq
irl3215.pdf

PD- 91792IRL3215HEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 150V Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 0.166 Fast SwitchingG Fully Avalanche RatedID = 12A SDescriptionFifth Generation HEXFETs from International Rectifier utilize advancedprocessing techniques to achieve extremely low on-resistance per
Другие MOSFET... IRL3102S , IRL3103 , IRL3103D1 , IRL3103D1S , IRL3103D2 , IRL3103L , IRL3103S , IRL3202 , K3569 , IRL3215 , IRL3302 , IRL3302S , IRL3303 , IRL3303L , IRL3303S , IRL3402 , IRL3402S .
History: H5N2801P | IXFK40N50Q2 | IRFBC30L | IRFBC30S | BLF6G20-230PRN | BLF6G20-110 | VHM40-06P1
History: H5N2801P | IXFK40N50Q2 | IRFBC30L | IRFBC30S | BLF6G20-230PRN | BLF6G20-110 | VHM40-06P1



Список транзисторов
Обновления
MOSFET: AP3409MI | AP3407MI | AP3407AI | AP3404BI | AP3401MI | AP3401AI | AP3400MI-L | AP3400DI | AP3400CI | AP3400BI | AP3400AI | AP320N04TLG5 | AP30P10P | AP30P06D | AP30P03DF | AP13P20D
Popular searches
2sc828 transistor | 2sd357 | 110n8f6 mosfet datasheet | 2sc458 datasheet | irfz48 | bf494 transistor equivalent | 2sc458 pinout | bc183l