Справочник MOSFET. SIHA20N50E

 

SIHA20N50E MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: SIHA20N50E
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 34 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 19 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 46 nC
   trⓘ - Время нарастания: 27 ns
   Cossⓘ - Выходная емкость: 87 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.184 Ohm
   Тип корпуса: TO-220FP

 Аналог (замена) для SIHA20N50E

 

 

SIHA20N50E Datasheet (PDF)

 ..1. Size:164K  vishay
 siha20n50e.pdf

SIHA20N50E SIHA20N50E

SiHA20N50Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low figure-of-merit (FOM) Ron x QgVDS (V) at TJ max. 550 Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.184 Reduced switching and conduction lossesQg max. (nC) 92 Low gate charge (Qg)Qgs (nC) 10 Avalanche energy rated (UIS)Qgd (nC) 19 Mater

 9.1. Size:104K  vishay
 siha22n60ael.pdf

SIHA20N50E SIHA20N50E

SiHA22N60AELwww.vishay.comVishay SiliconixEL Series Power MOSFETFEATURESDThin-Lead TO-220 FULLPAK Low figure-of-merit (FOM) Ron x Qg Low input capacitance (Ciss) Reduced switching and conduction lossesG Ultra low gate charge (Qg) Avalanche energy rated (UIS) Material categorization: for definitions of compliance Splease see www.vishay.com/doc?999

 9.2. Size:155K  vishay
 siha21n60ef.pdf

SIHA20N50E SIHA20N50E

SiHA21N60EFwww.vishay.comVishay SiliconixEF Series Power MOSFET with Fast Body DiodeFEATURESDThin-Lead TO-220 FULLPAK Fast body diode MOSFET using E series technology Reduced trr, Qrr, and IRRM Low figure-of-merit (FOM): Ron x QgG Low input capacitance (Ciss)Available Increased robustness due to low Qrr Ultra low gate charge (Qg) Avalanche en

 9.3. Size:171K  vishay
 siha22n60e.pdf

SIHA20N50E SIHA20N50E

SiHA22N60Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low figure-of-merit (FOM) Ron x QgVDS (V) at TJ max. 650 Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.18 Reduced switching and conduction lossesQg max. (nC) 86 Ultra low gate charge (Qg)Qgs (nC) 11 Avalanche energy rated (UIS)Qgd (nC) 24

 9.4. Size:164K  vishay
 siha25n50e.pdf

SIHA20N50E SIHA20N50E

SiHA25N50Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low figure-of-merit (FOM): Ron x QgVDS (V) at TJ max. 550 Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.145 Reduced switching and conduction lossesQg (Max.) (nC) 86 Low gate charge (Qg)Qgs (nC) 14Qgd (nC) 25 Avalanche energy rated (UIS)Config

 9.5. Size:129K  vishay
 siha22n60ae.pdf

SIHA20N50E SIHA20N50E

SiHA22N60AEwww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESDThin-Lead TO-220 FULLPAK Low figure-of-merit (FOM) Ron x Qg Low input capacitance (Ciss) Reduced switching and conduction lossesG Ultra low gate charge (Qg)Available Avalanche energy rated (UIS) Material categorization: for definitions of compliance Splease see www.vishay.co

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
Back to Top