Справочник MOSFET. SIHA22N60E

 

SIHA22N60E MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: SIHA22N60E
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 35 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 21 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 57 nC
   trⓘ - Время нарастания: 27 ns
   Cossⓘ - Выходная емкость: 90 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.18 Ohm
   Тип корпуса: TO-220FP

 Аналог (замена) для SIHA22N60E

 

 

SIHA22N60E Datasheet (PDF)

 ..1. Size:171K  vishay
 siha22n60e.pdf

SIHA22N60E SIHA22N60E

SiHA22N60Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low figure-of-merit (FOM) Ron x QgVDS (V) at TJ max. 650 Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.18 Reduced switching and conduction lossesQg max. (nC) 86 Ultra low gate charge (Qg)Qgs (nC) 11 Avalanche energy rated (UIS)Qgd (nC) 24

 5.1. Size:104K  vishay
 siha22n60ael.pdf

SIHA22N60E SIHA22N60E

SiHA22N60AELwww.vishay.comVishay SiliconixEL Series Power MOSFETFEATURESDThin-Lead TO-220 FULLPAK Low figure-of-merit (FOM) Ron x Qg Low input capacitance (Ciss) Reduced switching and conduction lossesG Ultra low gate charge (Qg) Avalanche energy rated (UIS) Material categorization: for definitions of compliance Splease see www.vishay.com/doc?999

 5.2. Size:129K  vishay
 siha22n60ae.pdf

SIHA22N60E SIHA22N60E

SiHA22N60AEwww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESDThin-Lead TO-220 FULLPAK Low figure-of-merit (FOM) Ron x Qg Low input capacitance (Ciss) Reduced switching and conduction lossesG Ultra low gate charge (Qg)Available Avalanche energy rated (UIS) Material categorization: for definitions of compliance Splease see www.vishay.co

 9.1. Size:155K  vishay
 siha21n60ef.pdf

SIHA22N60E SIHA22N60E

SiHA21N60EFwww.vishay.comVishay SiliconixEF Series Power MOSFET with Fast Body DiodeFEATURESDThin-Lead TO-220 FULLPAK Fast body diode MOSFET using E series technology Reduced trr, Qrr, and IRRM Low figure-of-merit (FOM): Ron x QgG Low input capacitance (Ciss)Available Increased robustness due to low Qrr Ultra low gate charge (Qg) Avalanche en

 9.2. Size:164K  vishay
 siha25n50e.pdf

SIHA22N60E SIHA22N60E

SiHA25N50Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low figure-of-merit (FOM): Ron x QgVDS (V) at TJ max. 550 Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.145 Reduced switching and conduction lossesQg (Max.) (nC) 86 Low gate charge (Qg)Qgs (nC) 14Qgd (nC) 25 Avalanche energy rated (UIS)Config

 9.3. Size:164K  vishay
 siha20n50e.pdf

SIHA22N60E SIHA22N60E

SiHA20N50Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low figure-of-merit (FOM) Ron x QgVDS (V) at TJ max. 550 Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.184 Reduced switching and conduction lossesQg max. (nC) 92 Low gate charge (Qg)Qgs (nC) 10 Avalanche energy rated (UIS)Qgd (nC) 19 Mater

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top