SIHA25N50E - аналоги, параметры транзистора - Справочник транзисторов

SIHA25N50E даташит

..1. Size:164K vishay
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SiHA25N50E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 550 Low input capacitance (Ciss) RDS(on) max. at 25 C ( ) VGS = 10 V 0.145 Reduced switching and conduction losses Qg (Max.) (nC) 86 Low gate charge (Qg) Qgs (nC) 14 Qgd (nC) 25 Avalanche energy rated (UIS) Config

9.1. Size:104K vishay
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SiHA22N60AEL www.vishay.com Vishay Siliconix EL Series Power MOSFET FEATURES D Thin-Lead TO-220 FULLPAK Low figure-of-merit (FOM) Ron x Qg Low input capacitance (Ciss) Reduced switching and conduction losses G Ultra low gate charge (Qg) Avalanche energy rated (UIS) Material categorization for definitions of compliance S please see www.vishay.com/doc?999

9.2. Size:155K vishay
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SiHA21N60EF www.vishay.com Vishay Siliconix EF Series Power MOSFET with Fast Body Diode FEATURES D Thin-Lead TO-220 FULLPAK Fast body diode MOSFET using E series technology Reduced trr, Qrr, and IRRM Low figure-of-merit (FOM) Ron x Qg G Low input capacitance (Ciss) Available Increased robustness due to low Qrr Ultra low gate charge (Qg) Avalanche en

9.3. Size:171K vishay
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SiHA22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 650 Low input capacitance (Ciss) RDS(on) max. at 25 C ( ) VGS = 10 V 0.18 Reduced switching and conduction losses Qg max. (nC) 86 Ultra low gate charge (Qg) Qgs (nC) 11 Avalanche energy rated (UIS) Qgd (nC) 24