Справочник MOSFET. SIHF15N60E

 

SIHF15N60E MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: SIHF15N60E

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 34 W

Предельно допустимое напряжение сток-исток (Uds): 600 V

Предельно допустимое напряжение затвор-исток (Ugs): 20 V

Пороговое напряжение включения Ugs(th): 4 V

Максимально допустимый постоянный ток стока (Id): 15 A

Максимальная температура канала (Tj): 150 °C

Время нарастания (tr): 51 ns

Выходная емкость (Cd): 70 pf

Сопротивление сток-исток открытого транзистора (Rds): 0.28 Ohm

Тип корпуса: TO-220FP

Аналог (замена) для SIHF15N60E

 

 

SIHF15N60E Datasheet (PDF)

1.1. sihf15n60e.pdf Size:136K _upd-mosfet

SIHF15N60E
SIHF15N60E

SiHF15N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY • Low Figure-of-Merit (FOM) Ron x Qg VDS (V) at TJ max. 650 • Low Input Capacitance (Ciss) RDS(on) max. at 25 °C () VGS = 10 V 0.28 • Reduced Switching and Conduction Losses Qg max. (nC) 76 • Ultra Low Gate Charge (Qg) Qgs (nC) 11 • Avalanche Energy Rated (UIS) Qgd (nC) 17 •

2.1. sihf15n65e.pdf Size:160K _upd-mosfet

SIHF15N60E
SIHF15N60E

SiHF15N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY • Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 700 Available • Low input capacitance (Ciss) RDS(on) max. at 25 °C (Ω) VGS = 10 V 0.28 • Reduced switching and conduction losses Available Qg max. (nC) 96 • Ultra low gate charge (Qg) Qgs (nC) 11 • Avalanche energy rated (U

 5.1. sihf12n65e.pdf Size:134K _upd-mosfet

SIHF15N60E
SIHF15N60E

SiHF12N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY • Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 700 • Low input capacitance (Ciss) RDS(on) max. at 25 °C (Ω) VGS = 10 V 0.38 • Reduced switching and conduction losses Qg max. (nC) 70 • Ultra low gate charge (Qg) Qgs (nC) 9 • Avalanche energy rated (UIS) Qgd (nC) 16 • M

5.2. sihb16n50c sihf16n50c.pdf Size:175K _upd-mosfet

SIHF15N60E
SIHF15N60E

SiHP16N50C, SiHB16N50C, SiHF16N50C www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Low Figure-of-Merit Ron x Qg VDS (V) at TJ max. 560 RDS(on) ()VGS = 10 V 0.38 • 100 % Avalanche Tested Qg (Max.) (nC) 68 • Gate Charge Improved Qgs (nC) 17.6 • Trr/Qrr Improved Qgd (nC) 21.8 Configuration Single • Compliant to RoHS Directive 2002/95/EC TO-220A

 5.3. sihf18n50c.pdf Size:168K _upd-mosfet

SIHF15N60E
SIHF15N60E

SiHP18N50C, SiHF18N50C Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Low Figure-of-Merit Ron x Qg VDS (V) at TJ max. 560 • 100 % Avalanche Tested RDS(on) (Ω)VGS = 10 V 0.225 • High Peak Current Capability Qg (Max.) (nC) 76 • dV/dt Ruggedness Qgs (nC) 21 Qgd (nC) 29 • Improved trr/Qrr Configuration Single • Improved Gate Charge D • High Power Dissipati

5.4. sihb12n50c sihf12n50c.pdf Size:179K _upd-mosfet

SIHF15N60E
SIHF15N60E

SiHP12N50C, SiHB12N50C, SiHF12N50C Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Low Figure-of-Merit Ron x Qg VDS (V) at TJ max. 560 V RDS(on) (Ω)VGS = 10 V 0.555 • 100 % Avalanche Tested Qg (Max.) (nC) 48 • Gate Charge Improved Qgs (nC) 12 • Trr/Qrr Improved Qgd (nC) 15 Configuration Single • Compliant to RoHS Directive 2002/95/EC TO-220AB TO-220 FULLPAK

 5.5. sihf10n40d.pdf Size:168K _upd-mosfet

SIHF15N60E
SIHF15N60E

SiHF10N40D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY • Optimal Design VDS (V) at TJ max. 450 - Low Area Specific On-Resistance RDS(on) max. at 25 °C () VGS = 10 V 0.6 - Low Input Capacitance (Ciss) Qg max. (nC) 30 - Reduced Capacitive Switching Losses Qgs (nC) 4 - High Body Diode Ruggedness - Avalanche Energy Rated (UIS) Qgd (nC) 7 •

5.6. sihf12n60e.pdf Size:168K _upd-mosfet

SIHF15N60E
SIHF15N60E

SiHF12N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY • Low Figure-of-Merit (FOM) Ron x Qg VDS (V) at TJ max. 650 • Low Input Capacitance (Ciss) RDS(on) max. at 25 °C () VGS = 10 V 0.38 • Reduced Switching and Conduction Losses Qg max. (nC) 58 • Ultra Low Gate Charge (Qg) Qgs (nC) 6 • Avalanche Energy Rated (UIS) Qgd (nC) 13 •

5.7. sihf18n50d.pdf Size:169K _upd-mosfet

SIHF15N60E
SIHF15N60E

SiHF18N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY • Optimal Design VDS (V) at TJ max. 550 - Low Area Specific On-Resistance RDS(on) max. at 25 °C () VGS = 10 V 0.28 - Low Input Capacitance (Ciss) Qg (max.) (nC) 76 - Reduced Capacitive Switching Losses Qgs (nC) 11 - High Body Diode Ruggedness Qgd (nC) 17 - Avalanche Energy Rated (UIS)

5.8. sihp12n50c sihb12n50c sihf12n50c.pdf Size:154K _vishay

SIHF15N60E
SIHF15N60E

Другие MOSFET... SIHD5N50D , SIHD6N62E , SIHD6N65E , SIHD7N60E , SIHF10N40D , SIHF12N50C , SIHF12N60E , SIHF12N65E , IRF840 , SIHF15N65E , SIHF16N50C , SIHF18N50C , SIHF18N50D , SIHF22N60E , SIHF22N60S , IRF7404PBF-1 , IRF7404QPBF .

Back to Top

 


SIHF15N60E
  SIHF15N60E
  SIHF15N60E
 

social 

Список транзисторов

Обновления

MOSFET: SSW4N60B | SSW2N60B | SSU2N60B | SSU1N60B | SSU1N45 | SSTSD203 | SSTSD201 | SST4416 | SST441 | SST440 | SST4393 | SST4392 | SST4391 | SST177 | SST176 |
 


 

 

Back to Top