IRF7413PBF-1 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IRF7413PBF-1
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 2.5 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 3 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 13 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 52 nC
trⓘ - Время нарастания: 50 ns
Cossⓘ - Выходная емкость: 680 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.011 Ohm
Тип корпуса: SO-8
Аналог (замена) для IRF7413PBF-1
IRF7413PBF-1 Datasheet (PDF)
irf7413pbf-1.pdf
IRF7413PbF-1HEXFET Power MOSFETAVDS 30 V A1 8S DRDS(on) max 0.011 2 7S D(@V = 10V)GS3 6Qg (typical) 52 nCS DID 45G D13 A(@T = 25C)ASO-8Top ViewFeatures BenefitsIndustry-standard pinout SO-8 Package Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techniques Easier ManufacturingRoHS Compliant, Halogen-Free Environme
irf7413pbf.pdf
PD - 95017CIRF7413PbFHEXFET Power MOSFETl Generation V Technologyl Ultra Low On-Resistance AA1 8l N-Channel MosfetS Dl Surface Mount2 7S D VDSS = 30Vl Available in Tape & Reell Dynamic dv/dt Rating 3 6S Dl Fast Switching4 5G Dl 100% RG TestedRDS(on) = 0.011l Lead-FreeTop ViewDescriptionFifth Generation HEXFETs from International Rectifierutil
irf7413pbf.pdf
PD - 95017CIRF7413PbFHEXFET Power MOSFETl Generation V Technologyl Ultra Low On-Resistance AA1 8l N-Channel MosfetS Dl Surface Mount2 7S D VDSS = 30Vl Available in Tape & Reell Dynamic dv/dt Rating 3 6S Dl Fast Switching4 5G Dl 100% RG TestedRDS(on) = 0.011l Lead-FreeTop ViewDescriptionFifth Generation HEXFETs from International Rectifierutil
irf7413.pdf
PD- 91330FIRF7413SMPS MOSFETHEXFET Power MOSFETVDSS RDS(on) max(mW) IDApplicationsl High frequency DC-DC converters30V 11@VGS = 10V 12ABenefitsAAl Low Gate to Drain Charge to Reduce 1 8S DSwitching Losses2 7S Dl Fully Characterized Capacitance Including3 6SEffective COSS to Simplify Design, (See DApp. Note AN1001) 45G Dl Fully Characterized Avalan
irf7413qpbf.pdf
PD - 96112IRF7413QPbFHEXFET Power MOSFETAl Advanced Process TechnologyA1 8S Dl Ultra Low On-Resistance2 7l N Channel MOSFETS D VDSS = 30Vl Surface Mount3 6S Dl Available in Tape & Reel4 5l 150C Operating TemperatureG DRDS(on) = 0.011l Automotive [Q101] Qualifiedl Lead-FreeTop ViewDescriptionSpecifically designed for Automotive applications,
irf7413zpbf.pdf
PD - 95335DIRF7413ZPbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl Control FET for Notebook Processor10m @VGS = 10VPower 30V 13Al Control and Synchronous RectifierMOSFET for Graphics Cards and POLAConverters in Computing, NetworkingA1 8S Dand Telecommunication Systems2 7S D3 6S DBenefits4 5G Dl Ultra-Low Gate ImpedanceSO-8l Very Low RDS
irf7413a.pdf
PD - 9.1613AIRF7413APRELIMINARYHEXFET Power MOSFETA Generation V TechnologyA1 8S D Ultra Low On-Resistance2 7 N-Channel Mosfet VDSS = 30VS D Surface Mount3 6S D Available in Tape & Reel4 5G D Dynamic dv/dt RatingRDS(on) = 0.0135 Fast SwitchingTop ViewDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing
irf7413gpbf.pdf
PD - 96250IRF7413GPbFHEXFET Power MOSFETl Generation V Technologyl Ultra Low On-Resistance AA1 8l N-Channel MosfetS Dl Surface Mount2 7S D VDSS = 30Vl Available in Tape & Reell Dynamic dv/dt Rating 3 6S Dl Fast Switching4 5G Dl 100% RG TestedRDS(on) = 0.011l Lead-Freel Halogen-FreeTop ViewDescriptionFifth Generation HEXFETs from International
irf7413zgpbf.pdf
PD - 96249IRF7413ZGPbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl Control FET for Notebook Processor10m @VGS = 10VPower 30V 13Al Control and Synchronous RectifierMOSFET for Graphics Cards and POLAConverters in Computing, NetworkingA1 8S Dand Telecommunication Systems2 7S D3 6S DBenefits4 5l Ultra-Low Gate ImpedanceG Dl Very Low RDS(on)
irf7413zpbf.pdf
PD - 95335DIRF7413ZPbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl Control FET for Notebook Processor10m @VGS = 10VPower 30V 13Al Control and Synchronous RectifierMOSFET for Graphics Cards and POLAConverters in Computing, NetworkingA1 8S Dand Telecommunication Systems2 7S D3 6S DBenefits4 5G Dl Ultra-Low Gate ImpedanceSO-8l Very Low RDS
irf7413.pdf
SMD Type MOSFETN-Channel MOSFETIRF7413 (KRF7413)SOP-8 Features VDS (V) = 30V ID = 12 A (VGS = 10V)1.50 0.15 RDS(ON) 11m (VGS = 10V)1 8S D1 Source 5 Drain2 7S D6 Drain2 Source3 67 DrainS D 3 Source8 Drain4 Gate45G DTop View Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 30V
irf7413trpbf.pdf
IRF7413TRPBFwww.VBsemi.twN-Channel 20V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.012 at VGS = 10 V 1220 6.1 nC Optimized for High-Side Synchronous0.015 at VGS = 4.5 V 11Rectifier Operation 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Notebook CPU Core- High-Side Switch
Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRFP250N , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
Список транзисторов
Обновления
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