IRF7416GPBF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IRF7416GPBF
Тип транзистора: MOSFET
Полярность: P
Максимальная рассеиваемая мощность (Pd): 2.5 W
Предельно допустимое напряжение сток-исток |Uds|: 30 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Максимально допустимый постоянный ток стока |Id|: 10 A
Максимальная температура канала (Tj): 150 °C
Время нарастания (tr): 49 ns
Выходная емкость (Cd): 890 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.02 Ohm
Тип корпуса: SO-8
Аналог (замена) для IRF7416GPBF
IRF7416GPBF Datasheet (PDF)
irf7416gpbf.pdf
PD - 96252AIRF7416GPbFHEXFET Power MOSFETl Generation V Technologyl Ultra Low On-Resistance A1 8S Dl P-Channel MosfetVDSS = -30Vl Surface Mount 2 7S Dl Available in Tape & Reel3 6l Dynamic dv/dt RatingS Dl Fast Switching45G Dl Lead-FreeRDS(on) = 0.02l Halogen-FreeTop ViewDescriptionFifth Generation HEXFETs from International Rectifierutilize
irf7416qpbf.pdf
PD - 96124IRF7416QPbFHEXFET Power MOSFETl Advanced Process TechnologyA1 8l Ultra Low On-ResistanceS Dl P Channel MOSFETVDSS = -30V2 7S Dl Surface Mount3 6l Available in Tape & ReelS Dl 150C Operating Temperature45G DRDS(on) = 0.02l Automotive [Q101] Qualifiedl Lead-FreeTop ViewDescriptionSpecifically designed for Automotive applications,
irf7416pbf-1.pdf
IRF7416PbF-1HEXFET Power MOSFETVDS -30 VA1 8S DRDS(on) max 0.020 2 7(@V = -10V) S DGSQg (typical) 61 nC3 6S DID 4 5-10 AG D(@T = 25C)ASO-8Top ViewFeatures BenefitsIndustry-standard pinout SO-8 Package Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techniques Easier ManufacturingRoHS Compliant, Halogen-Free Environmen
auirf7416q.pdf
AUTOMOTIVE GRADEAUIRF7416QHEXFET Power MOSFETFeaturesl Advanced Process Technology A1 8S DV(BR)DSS-30Vl Low On-Resistance2 7S Dl Logic Level Gate Drive3 6S D RDS(on) max.0.02l P-Channel MOSFET4 5G Dl Dynamic dV/dT RatingID-10ATop Viewl 150C Operating Temperaturel Fast Switchingl Fully Avalanche Ratedl Lead-Free, RoHS Compliantl Autom
irf7416.pdf
PD - 9.1356DIRF7416HEXFET Power MOSFET Generation V TechnologyA1 8 Ultra Low On-ResistanceS D P-Channel Mosfet VDSS = -30V2 7S D Surface Mount3 6S D Available in Tape & Reel4 5 Dynamic dv/dt RatingG DRDS(on) = 0.02 Fast SwitchingTop ViewDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to ach
irf7416qpbf.pdf
PD - 96124IRF7416QPbFHEXFET Power MOSFETl Advanced Process TechnologyA1 8l Ultra Low On-ResistanceS Dl P Channel MOSFETVDSS = -30V2 7S Dl Surface Mount3 6l Available in Tape & ReelS Dl 150C Operating Temperature45G DRDS(on) = 0.02l Automotive [Q101] Qualifiedl Lead-FreeTop ViewDescriptionSpecifically designed for Automotive applications,
irf7416pbf.pdf
PD - 95137AIRF7416PbFl Generation V Technology HEXFET Power MOSFETl Ultra Low On-ResistanceAl P-Channel Mosfet1 8S Dl Surface MountVDSS = -30V2 7S Dl Available in Tape & Reel3 6l Dynamic dv/dt RatingS Dl Fast Switching45G DRDS(on) = 0.02l Lead-FreeTop ViewDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced proces
irf7416pbf.pdf
PD - 95137AIRF7416PbFl Generation V Technology HEXFET Power MOSFETl Ultra Low On-ResistanceAl P-Channel Mosfet1 8S Dl Surface MountVDSS = -30V2 7S Dl Available in Tape & Reel3 6l Dynamic dv/dt RatingS Dl Fast Switching45G DRDS(on) = 0.02l Lead-FreeTop ViewDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced proces
irf7416trpbf.pdf
IRF7416TRPBFwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.018 at VGS = - 10 V - 9.0 TrenchFET Power MOSFET- 30 13 nC 100 % Rg Tested0.024 at VGS = - 4.5 V - 7.8APPLICATIONS Load Switch Battery SwitchS SO-8S1 8 DG S D2 7S3 6
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