Справочник MOSFET. IRF7416PBF

 

IRF7416PBF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IRF7416PBF
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 2.5 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 10 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 61 nC
   trⓘ - Время нарастания: 49 ns
   Cossⓘ - Выходная емкость: 890 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.02 Ohm
   Тип корпуса: SO-8

 Аналог (замена) для IRF7416PBF

 

 

IRF7416PBF Datasheet (PDF)

 ..1. Size:234K  international rectifier
irf7416pbf.pdf

IRF7416PBF
IRF7416PBF

PD - 95137AIRF7416PbFl Generation V Technology HEXFET Power MOSFETl Ultra Low On-ResistanceAl P-Channel Mosfet1 8S Dl Surface MountVDSS = -30V2 7S Dl Available in Tape & Reel3 6l Dynamic dv/dt RatingS Dl Fast Switching45G DRDS(on) = 0.02l Lead-FreeTop ViewDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced proces

 ..2. Size:237K  infineon
irf7416pbf.pdf

IRF7416PBF
IRF7416PBF

PD - 95137AIRF7416PbFl Generation V Technology HEXFET Power MOSFETl Ultra Low On-ResistanceAl P-Channel Mosfet1 8S Dl Surface MountVDSS = -30V2 7S Dl Available in Tape & Reel3 6l Dynamic dv/dt RatingS Dl Fast Switching45G DRDS(on) = 0.02l Lead-FreeTop ViewDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced proces

 0.1. Size:228K  international rectifier
irf7416pbf-1.pdf

IRF7416PBF
IRF7416PBF

IRF7416PbF-1HEXFET Power MOSFETVDS -30 VA1 8S DRDS(on) max 0.020 2 7(@V = -10V) S DGSQg (typical) 61 nC3 6S DID 4 5-10 AG D(@T = 25C)ASO-8Top ViewFeatures BenefitsIndustry-standard pinout SO-8 Package Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techniques Easier ManufacturingRoHS Compliant, Halogen-Free Environmen

 7.1. Size:269K  1
irf7416qpbf.pdf

IRF7416PBF
IRF7416PBF

PD - 96124IRF7416QPbFHEXFET Power MOSFETl Advanced Process TechnologyA1 8l Ultra Low On-ResistanceS Dl P Channel MOSFETVDSS = -30V2 7S Dl Surface Mount3 6l Available in Tape & ReelS Dl 150C Operating Temperature45G DRDS(on) = 0.02l Automotive [Q101] Qualifiedl Lead-FreeTop ViewDescriptionSpecifically designed for Automotive applications,

 7.2. Size:244K  international rectifier
auirf7416q.pdf

IRF7416PBF
IRF7416PBF

AUTOMOTIVE GRADEAUIRF7416QHEXFET Power MOSFETFeaturesl Advanced Process Technology A1 8S DV(BR)DSS-30Vl Low On-Resistance2 7S Dl Logic Level Gate Drive3 6S D RDS(on) max.0.02l P-Channel MOSFET4 5G Dl Dynamic dV/dT RatingID-10ATop Viewl 150C Operating Temperaturel Fast Switchingl Fully Avalanche Ratedl Lead-Free, RoHS Compliantl Autom

 7.3. Size:116K  international rectifier
irf7416.pdf

IRF7416PBF
IRF7416PBF

PD - 9.1356DIRF7416HEXFET Power MOSFET Generation V TechnologyA1 8 Ultra Low On-ResistanceS D P-Channel Mosfet VDSS = -30V2 7S D Surface Mount3 6S D Available in Tape & Reel4 5 Dynamic dv/dt RatingG DRDS(on) = 0.02 Fast SwitchingTop ViewDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to ach

 7.4. Size:269K  international rectifier
irf7416qpbf.pdf

IRF7416PBF
IRF7416PBF

PD - 96124IRF7416QPbFHEXFET Power MOSFETl Advanced Process TechnologyA1 8l Ultra Low On-ResistanceS Dl P Channel MOSFETVDSS = -30V2 7S Dl Surface Mount3 6l Available in Tape & ReelS Dl 150C Operating Temperature45G DRDS(on) = 0.02l Automotive [Q101] Qualifiedl Lead-FreeTop ViewDescriptionSpecifically designed for Automotive applications,

 7.5. Size:233K  international rectifier
irf7416gpbf.pdf

IRF7416PBF
IRF7416PBF

PD - 96252AIRF7416GPbFHEXFET Power MOSFETl Generation V Technologyl Ultra Low On-Resistance A1 8S Dl P-Channel MosfetVDSS = -30Vl Surface Mount 2 7S Dl Available in Tape & Reel3 6l Dynamic dv/dt RatingS Dl Fast Switching45G Dl Lead-FreeRDS(on) = 0.02l Halogen-FreeTop ViewDescriptionFifth Generation HEXFETs from International Rectifierutilize

 7.6. Size:879K  cn vbsemi
irf7416trpbf.pdf

IRF7416PBF
IRF7416PBF

IRF7416TRPBFwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.018 at VGS = - 10 V - 9.0 TrenchFET Power MOSFET- 30 13 nC 100 % Rg Tested0.024 at VGS = - 4.5 V - 7.8APPLICATIONS Load Switch Battery SwitchS SO-8S1 8 DG S D2 7S3 6

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