IRF7421D1PBF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IRF7421D1PBF
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 2 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 1 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 5.8 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 18 nC
trⓘ - Время нарастания: 27 ns
Cossⓘ - Выходная емкость: 200 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.035 Ohm
Тип корпуса: SO-8
Аналог (замена) для IRF7421D1PBF
IRF7421D1PBF Datasheet (PDF)
irf7421d1pbf.pdf
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PD- 95304IRF7421D1PbFFETKY MOSFET / Schottky Diodel Co-packaged HEXFET PowerAA1 8MOSFET and Schottky Diode A DVDSS = 30Vl Ideal For Synchronous Regulator 2 7S DApplications3 6S DRDS(on) = 0.035l Generation V Technology4 5G Dl SO-8 FootprintSchottky Vf = 0.39Vl Lead-FreeTop View DescriptionThe FETKYTM family of co-packaged HEXFETs and Schottky
irf7421d1.pdf
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PD- 91411CIRF7421D1PRELIMINARY FETKY MOSFET / Schottky Diode Co-packaged HEXFET PowerAA1 8MOSFET and Schottky Diode A DVDSS = 30V Ideal For Synchronous Regulator 2 7S DApplications3 6S DRDS(on) = 0.035 Generation V Technology45G D SO-8 FootprintSchottky Vf = 0.39VTop View DescriptionThe FETKYTM family of co-packaged HEX
irf7424pbf.pdf
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PD- 95343IRF7424PbFHEXFET Power MOSFETl Ultra Low On-ResistanceVDSS RDS(on) max (mW) IDl P-Channel MOSFET-30V 13.5@VGS = -10V -11Al Surface Mount22@VGS = -4.5V -8.8Al Available in Tape & Reell Lead-FreeA1 8Description S DThese P-Channel MOSFETs from International2 7S DRectifier utilize advanced processing techniques to3achieve the extremely low on-resista
irf7425pbf.pdf
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PD- 96062IRF7425PbFHEXFET Power MOSFETl Ultra Low On-ResistanceVDSS RDS(on) max (mW) IDl P-Channel MOSFET20V 8.2@VGS = -4.5V -15Al Surface Mount13@VGS = -2.5V -13Al Available in Tape & Reell Lead-FreeA1 8Description S DThese P-Channel HEXFET Power MOSFETs from2 7S DInternational Rectifier utilize advanced processing3 6techniques to achieve the extremely
irf7420pbf.pdf
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PD - 95633AIRF7420PbFHEXFET Power MOSFETl Ultra Low On-ResistanceVDSS RDS(on) max IDl P-Channel MOSFET -12V 14m@VGS = -4.5V -11.5Al Surface Mount17.5m@VGS = -2.5V -9.8Al Available in Tape & Reel26m@VGS = -1.8V -8.1Al Lead-FreeDescriptionAThese P-Channel HEXFET Power MOSFETs from1 8S DInternational Rectifier utilize advanced processing2 7techniq
irf7422d2.pdf
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PD- 91412LIRF7422D2FETKY TM MOSFET & Schottky DiodeA Co-packaged HEXFET PowerA1 8A DMOSFET and Schottky DiodeVDSS = -20V2 7 Ideal For Buck Regulator ApplicationsA D P-Channel HEXFET3 6RDS(on) = 0.09S D Low VF Schottky Rectifier45G D Generation 5 TechnologySchottky Vf = 0.52V SO-8 FootprintTop ViewDescriptionThe FETKYTM family of Co-pack
irf7422d2pbf.pdf
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PD - 95310IRF7422D2PbF Lead-Freewww.irf.com 110/13/04IRF7422D2PbF2 www.irf.comIRF7422D2PbFwww.irf.com 3IRF7422D2PbF4 www.irf.comIRF7422D2PbFwww.irf.com 5IRF7422D2PbF6 www.irf.comIRF7422D2PbFSO-8 (Fetky) Package OutlineINCHES MILLIMET ERSDIMD B MIN MAX MIN MAX5 A .0532 .0688 1.35 1.75AA1 .0040 .0098 0.10 0.25b .013 .020 0.33 0.518 7 6 5c
irf7425.pdf
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PD- 94022AIRF7425HEXFET Power MOSFET Ultra Low On-Resistance)VDSS RDS(on) max (m) ID))) P-Channel MOSFET20V 8.2@VGS = -4.5V -15A Surface Mount13@VGS = -2.5V -13A Available in Tape & ReelA1 8Description S DThese P-Channel HEXFET Power MOSFETs from2 7S DInternational Rectifier utilize advanced processing3 6techniques to achieve the ex
irf7424.pdf
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PD- 94024AIRF7424HEXFET Power MOSFET Ultra Low On-Resistance)VDSS RDS(on) max (m) ID))) P-Channel MOSFET-30V 13.5@VGS = -10V -11A Surface Mount22@VGS = -4.5V -8.8A Available in Tape & ReelA1 8Description S DThese P-Channel MOSFETs from International2 7S DRectifier utilize advanced processing techniques to3achieve the extremely low on-
irf7420pbf-1.pdf
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IRF7420PbF-1HEXFET Power MOSFETA1 8VDS -12 VS DRDS(on) max 2 7S D14 m(@V = -4.5V)GS3 6S DRDS(on) max 17.5 m4 5(@V = -2.5V)GS G DRDS(on) max 26 mSO-8Top View(@V = -1.8V)GSQg (typical) 38 nCID -11.5 A(@T = 25C)AFeatures BenefitsIndustry-standard pinout SO-8 Package Multi-Vendor CompatibilityCompatible with Existing Sur
irf7425pbf-1.pdf
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IRF7425PbF-1HEXFET Power MOSFETVDS -20 VA1 8S DRDS(on) max 8.22 7(@V = -4.5V) S DGSmRDS(on) max 3 6S D13(@V = -2.5V)GS4 5G DQg (typical) 87 nCID SO-8-15 A Top View(@T = 25C)AFeatures BenefitsIndustry-standard pinout SO-8 Package Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techniques Easier ManufacturingRoH
irf7420.pdf
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PD - 94278IRF7420HEXFET Power MOSFET Ultra Low On-ResistanceVDSS RDS(on) max ID P-Channel MOSFET -12V 14m@VGS = -4.5V -11.5A Surface Mount17.5m@VGS = -2.5V -9.8A Available in Tape & Reel26m@VGS = -1.8V -8.1ADescriptionAThese P-Channel HEXFET Power MOSFETs from1 8S DInternational Rectifier utilize advanced processing2 7techniques to achieve the ex
irf7424gpbf.pdf
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PD-96256IRF7424GPbFHEXFET Power MOSFETl Ultra Low On-ResistanceVDSS RDS(on) max (mW) IDl P-Channel MOSFET-30V 13.5@VGS = -10V -11Al Surface Mount22@VGS = -4.5V -8.8Al Available in Tape & Reell Lead-Freel Halogen-FreeA1 8Description S DThese P-Channel MOSFETs from International2 7S DRectifier utilize advanced processing techniques to3achieve the extremel
irf7424pbf.pdf
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PD- 95343IRF7424PbFHEXFET Power MOSFETl Ultra Low On-ResistanceVDSS RDS(on) max (mW) IDl P-Channel MOSFET-30V 13.5@VGS = -10V -11Al Surface Mount22@VGS = -4.5V -8.8Al Available in Tape & Reell Lead-FreeA1 8Description S DThese P-Channel MOSFETs from International2 7S DRectifier utilize advanced processing techniques to3achieve the extremely low on-resista
irf7425pbf.pdf
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IRF7425PbFHEXFET Power MOSFETVDS -20 VA1 8RDS(on) max S D8.2(@V = -4.5V) 2 7GSS DmRDS(on) max 3 613S D(@V = -2.5V)GS4 5Qg (typical) 87 nC G DID -15 ASO-8Top View(@T = 25C)AFeatures BenefitsIndustry-standard pinout SO-8 Package Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techniques Easier ManufacturingRoHS Co
irf7420pbf.pdf
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PD - 95633AIRF7420PbFHEXFET Power MOSFETl Ultra Low On-ResistanceVDSS RDS(on) max IDl P-Channel MOSFET -12V 14m@VGS = -4.5V -11.5Al Surface Mount17.5m@VGS = -2.5V -9.8Al Available in Tape & Reel26m@VGS = -1.8V -8.1Al Lead-FreeDescriptionAThese P-Channel HEXFET Power MOSFETs from1 8S DInternational Rectifier utilize advanced processing2 7techniq
irf7425tr.pdf
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IRF7425TRwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d Qg (Typ.) TrenchFET Power MOSFET0.011 at VGS = - 10 V - 13.5 100 % Rg TestedRoHS- 30 29.5 nCCOMPLIANT 100 % UIS Tested0.015 at VGS = - 4.5 V - 11.6APPLICATIONS Load Switch Notebook Adaptor SwitchSO-8 S S1 8 DS D2 7G
irf7424trpbf.pdf
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IRF7424TRPBFwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Available0.0125 at VGS = - 10 V - 11.6 TrenchFET Power MOSFET- 30 22 nC 100 % Rg Tested0.0180 at VGS = - 4.5 V - 10 100 % UIS TestedAPPLICATIONS Load SwitchesS - Notebook PCsSO-8- Desktop
Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
![IRF7421D1PBF](https://alltransistors.com/images/us.png)
![IRF7421D1PBF](https://alltransistors.com/images/es.png)
![IRF7421D1PBF](https://alltransistors.com/images/ru.png)
Список транзисторов
Обновления
MOSFET: SUN830I | SUN830F | SUN830DN | SUN830D | SUN82A20CI | SUN50A20CI | SUN09A40D | SUN05A50ZF | SUN05A50ZD | SUN05A25F | SRN1865FD | SRN1860FD | SRN1860F | SRN1665FD | SRN1660FD | SRN1660F