IRF744PBF - Даташиты. Аналоги. Основные параметры

PD - 95627 IRF744PbF Lead-Free 8/3/04 Document Number 91056 www.vishay.com 1 IRF744PbF Document Number 91056 www.vishay.com 2 IRF744PbF Document Number 91056 www.vishay.com 3 IRF744PbF Document Number 91056 www.vishay.com 4 IRF744PbF Document Number 91056 www.vishay.com 5 IRF744PbF Document Number 91056 www.vishay.com 6 IRF744PbF Document Number 91056 www.

IRF744, SiHF744 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 450 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.63 RoHS* Fast Switching COMPLIANT Qg (Max.) (nC) 80 Ease of Paralleling Qgs (nC) 12 Simple Drive Requirements Qgd (nC) 41 Lead (Pb)-free Available Configuration Single DESCRIPTION D TO

PD - 96124 IRF7416QPbF HEXFET Power MOSFET l Advanced Process Technology A 1 8 l Ultra Low On-Resistance S D l P Channel MOSFET VDSS = -30V 2 7 S D l Surface Mount 3 6 l Available in Tape & Reel S D l 150 C Operating Temperature 4 5 G D RDS(on) = 0.02 l Automotive [Q101] Qualified l Lead-Free Top View Description Specifically designed for Automotive applications,

PD - 95275 IRF7467PbF SMPS MOSFET Applications HEXFET Power MOSFET l High Frequency DC-DC Isolated VDSS RDS(on) max ID Converters with Synchronous Rectification 30V 12m 11A for Telecom and Industrial use l High Frequency Buck Converters for Computer Processor Power l Lead-Free A A 1 8 S D Benefits 2 7 S D l Ultra-Low Gate Impedance 3 6 l Very Low RDS(on) at 4.5V VGS

PD- 91330F IRF7413 SMPS MOSFET HEXFET Power MOSFET VDSS RDS(on) max(mW) ID Applications l High frequency DC-DC converters 30V 11@VGS = 10V 12A Benefits A A l Low Gate to Drain Charge to Reduce 1 8 S D Switching Losses 2 7 S D l Fully Characterized Capacitance Including 3 6 S Effective COSS to Simplify Design, (See D App. Note AN1001) 4 5 G D l Fully Characterized Avalan

PD - 95305 IRF7433PbF HEXFET Power MOSFET l Ultra Low On-Resistance VDSS RDS(on) max ID l P-Channel MOSFET -12V 24m @VGS = -4.5V -8.7A l Surface Mount 30m @VGS = -2.5V -7.4A l Available in Tape & Reel 46m @VGS = -1.8V -6.3A l Lead-Free Description A 1 8 S D These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to 2 7 S D achieve

PD- 93892C IRF7458 SMPS MOSFET HEXFET Power MOSFET Applications High Frequency Isolated DC-DC VDSS RDS(on) max ID Converters with Synchronous Rectification 30V 8.0m 14A for Telecom and Industrial Use High Frequency Buck Converters for Computer Processor Power Benefits A A 1 8 Ultra-Low Gate Impedance S D Very Low RDS(on) 2 7 S D Fully Characterized Avalanche Vol

PD - 9.1709 IRF7343 PRELIMINARY HEXFET Power MOSFET Generation V Technology N-CHANNEL MOSFE T N-Ch P-Ch 1 8 Ultra Low On-Resistance S1 D1 Dual N and P Channel MOSFET 2 7 G1 D1 Surface Mount VDSS 55V -55V 3 6 S2 D2 Fully Avalanche Rated 4 5 G2 D2 P-C H ANN EL MO SFE T RDS(on) 0.050 0.105 Description Top View Fifth Generation HEXFETs from International Rectifie

PD - 94311 IRF7476 HEXFET Power MOSFET Applications VDSS RDS(on) max ID High Frequency 3.3V and 5V input Point- 12V 8.0m @VGS = 4.5V 15A of-Load Synchronous Buck Converters for Netcom and Computing Applications. Power Management for Netcom, A A Computing and Portable Applications. 1 8 S D 2 7 S D Benefits 3 6 S D Ultra-Low Gate Impedance 4 5 G D

PD- 95731 IRF7452PbF Lead-Free www.irf.com 1 8/11/04 IRF7452PbF 2 www.irf.com IRF7452PbF www.irf.com 3 IRF7452PbF 4 www.irf.com IRF7452PbF www.irf.com 5 IRF7452PbF 6 www.irf.com IRF7452PbF SO-8 Package Outline Dimensions are shown in millimeters (inches) INCHES MILLIMETERS DIM D B MIN MAX MIN MAX 5 A .0532 .0688 1.35 1.75 A A1 .0040 .0098 0.10 0.25 b .013 .020

PD - 95017C IRF7413PbF HEXFET Power MOSFET l Generation V Technology l Ultra Low On-Resistance A A 1 8 l N-Channel Mosfet S D l Surface Mount 2 7 S D VDSS = 30V l Available in Tape & Reel l Dynamic dv/dt Rating 3 6 S D l Fast Switching 4 5 G D l 100% RG Tested RDS(on) = 0.011 l Lead-Free Top View Description Fifth Generation HEXFETs from International Rectifier util

PD - 95301 IRF7403PbF HEXFET Power MOSFET l Generation V Technology A l Ultra Low On-Resistance A 1 8 S D l N-Channel Mosfet VDSS = 30V 2 7 S D l Surface Mount 3 6 l Available in Tape & Reel S D l Dynamic dv/dt Rating 4 5 G D RDS(on) = 0.022 l Fast Switching l Lead-Free Top View Description Fifth Generation HEXFETs from International Rectifier utilize advanced proc

PD- 95343 IRF7424PbF HEXFET Power MOSFET l Ultra Low On-Resistance VDSS RDS(on) max (mW) ID l P-Channel MOSFET -30V 13.5@VGS = -10V -11A l Surface Mount 22@VGS = -4.5V -8.8A l Available in Tape & Reel l Lead-Free A 1 8 Description S D These P-Channel MOSFETs from International 2 7 S D Rectifier utilize advanced processing techniques to 3 achieve the extremely low on-resista

PD - 95302 IRF7406PbF HEXFET Power MOSFET l Generation V Technology l Ultra Low On-Resistance A 1 8 l P-Channel Mosfet S D VDSS = -30V 2 7 l Surface Mount S D l Available in Tape & Reel 3 6 S D l Dynamic dv/dt Rating 4 5 G D RDS(on) = 0.045 l Fast Switching l Lead-Free Top View Description Fifth Generation HEXFETs from International Rectifier utilize advanced proces

PD - 96112 IRF7413QPbF HEXFET Power MOSFET A l Advanced Process Technology A 1 8 S D l Ultra Low On-Resistance 2 7 l N Channel MOSFET S D VDSS = 30V l Surface Mount 3 6 S D l Available in Tape & Reel 4 5 l 150 C Operating Temperature G D RDS(on) = 0.011 l Automotive [Q101] Qualified l Lead-Free Top View Description Specifically designed for Automotive applications,

PD- 95559 IRF7473PbF HEXFET Power MOSFET Applications l Telecom and Data-Com 24 and 48V VDSS RDS(on) max ID input DC-DC converters l Motor Control 100V 26mW@VGS = 10V 6.9A l Uninterrutible Power Supply l Lead-Free Benefits l Ultra Low On-Resistance A A 1 8 l High Speed Switching S D l Low Gate Drive Current Due to Improved 2 7 S D Gate Charge Characteristic 3 6 S D l Imp

PD - 95335D IRF7413ZPbF HEXFET Power MOSFET Applications VDSS RDS(on) max ID l Control FET for Notebook Processor 10m @VGS = 10V Power 30V 13A l Control and Synchronous Rectifier MOSFET for Graphics Cards and POL A Converters in Computing, Networking A 1 8 S D and Telecommunication Systems 2 7 S D 3 6 S D Benefits 4 5 G D l Ultra-Low Gate Impedance SO-8 l Very Low RDS

PD- 95304 IRF7421D1PbF FETKY MOSFET / Schottky Diode l Co-packaged HEXFET Power A A 1 8 MOSFET and Schottky Diode A D VDSS = 30V l Ideal For Synchronous Regulator 2 7 S D Applications 3 6 S D RDS(on) = 0.035 l Generation V Technology 4 5 G D l SO-8 Footprint Schottky Vf = 0.39V l Lead-Free Top View Description The FETKYTM family of co-packaged HEXFETs and Schottky

PD - 95289 IRF7493PbF HEXFET Power MOSFET Applications VDSS RDS(on) max Qg (typ.) l High frequency DC-DC converters l Lead-Free 15m @VGS=10V 80V 35nC Benefits l Low Gate-to-Drain Charge to Reduce A A Switching Losses 1 8 S D l Fully Characterized Capacitance Including 2 7 S D Effective COSS to Simplify Design, (See 3 6 S D App. Note AN1001) 4 5 l Fully Characterized Av

PD - 95288 IRF7495PbF HEXFET Power MOSFET Applications VDSS RDS(on) max ID l High frequency DC-DC converters 100V 22m @VGS = 10V 7.3A l Lead-Free Benefits A A l Low Gate to Drain Charge to Reduce 1 8 S D Switching Losses 2 7 S D l Fully Characterized Capacitance Including 3 6 S D Effective COSS to Simplify Design, (See App. Note AN1001) 4 5 G D l Fully Characterized Avala

PD - 94880 IRF740LCPbF Lead-Free 12/10/03 Document Number 91052 www.vishay.com 1 IRF740LCPbF Document Number 91052 www.vishay.com 2 IRF740LCPbF Document Number 91052 www.vishay.com 3 IRF740LCPbF Document Number 91052 www.vishay.com 4 IRF740LCPbF Document Number 91052 www.vishay.com 5 IRF740LCPbF Document Number 91052 www.vishay.com 6 IRF740LCPbF Document Nu

IRF7425PbF HEXFET Power MOSFET VDS -20 V A 1 8 RDS(on) max S D 8.2 (@V = -4.5V) 2 7 GS S D m RDS(on) max 3 6 13 S D (@V = -2.5V) GS 4 5 Qg (typical) 87 nC G D ID -15 A SO-8 Top View (@T = 25 C) A Features Benefits Industry-standard pinout SO-8 Package Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Co

FOR REVIEW ONLY PD - 94641 PD - TBD IRF7494 HEXFET Power MOSFET Applications VDSS RDS(on) max ID l High frequency DC-DC converters 44m @VGS = 10V 150V 5.2A Benefits A A l Low Gate to Drain Charge to Reduce 1 8 S D Switching Losses 2 7 S D l Fully Characterized Capacitance Including 3 6 S D Effective COSS to Simplify Design, (See App. Note AN1001) 4 5 G D l Fully Charact

PD - 95461 IRF7455PbF Lead-Free www.irf.com 1 6/29/04 IRF7455PbF 2 www.irf.com IRF7455PbF www.irf.com 3 IRF7455PbF 4 www.irf.com IRF7455PbF www.irf.com 5 IRF7455PbF 6 www.irf.com IRF7455PbF SO-8 Package Outline Dimensions are shown in milimeters (inches) INCHES MILLIMETERS DIM D B MIN MAX MIN MAX 5 A .0532 .0688 1.35 1.75 A A1 .0040 .0098 0.10 0.25 b .013 .020

PD - 95633A IRF7420PbF HEXFET Power MOSFET l Ultra Low On-Resistance VDSS RDS(on) max ID l P-Channel MOSFET -12V 14m @VGS = -4.5V -11.5A l Surface Mount 17.5m @VGS = -2.5V -9.8A l Available in Tape & Reel 26m @VGS = -1.8V -8.1A l Lead-Free Description A These P-Channel HEXFET Power MOSFETs from 1 8 S D International Rectifier utilize advanced processing 2 7 techniq

PD- 93884C IRF7466 SMPS MOSFET HEXFET Power MOSFET Applications ) VDSS RDS(on) max(m ) ID ) ) ) High Frequency Isolated DC-DC 30V 12.5@VGS = 10V 11A Converters with Synchronous Rectification for Telecom and Industrial Use High Frequency Buck Converters for A Computer Processor Power A 1 8 S D Benefits 2 7 S D Ultra-Low Gate Impedance 3 6 S D Very

PD - 95202 IRF7402PbF HEXFET Power MOSFET Generation V Technology A Ultra Low On-Resistance A 1 8 S D N-Channel MOSFET VDSS = 20V 2 7 S D Very Small SOIC Package Low Profile (

PD- 93882D IRF7457 SMPS MOSFET HEXFET Power MOSFET Applications High Frequency DC-DC Isolated VDSS RDS(on) max ID Converters with Synchronous Rectification 20V 7.0m 15A for Telecom and Industrial use High Frequency Buck Converters for Computer Processor Power Benefits A A 1 8 S D Ultra-Low RDS(on) 2 7 Very Low Gate Impedance S D Fully Characterized Avalanche Volt

PD - 95287A IRF7492PbF HEXFET Power MOSFET VDSS RDS(on) max ID Applications l High frequency DC-DC converters 200V 79mW@VGS = 10V 3.7A l Lead-Free Benefits A A l Low Gate to Drain Charge to Reduce 1 8 S D Switching Losses 2 7 S D l Fully Characterized Capacitance Including 3 6 S D Effective COSS to Simplify Design, (See App. Note AN1001) 4 5 G D l Fully Characterized Ava

PD- 93913C IRF7470 SMPS MOSFET Applications HEXFET Power MOSFET High Frequency DC-DC Converters VDSS RDS(on) max ID with Synchronous Rectification 40V 13m 10A Benefits Ultra-Low Gate Impedance A A Very Low RDS(on) at 4.5V VGS 1 8 S D 2 7 Fully Characterized Avalanche Voltage S D and Current 3 6 S D 4 5 G D SO-8 Top View Absolute Maximum Ratings Symbol Paramet

PD- 91412L IRF7422D2 FETKY TM MOSFET & Schottky Diode A Co-packaged HEXFET Power A 1 8 A D MOSFET and Schottky Diode VDSS = -20V 2 7 Ideal For Buck Regulator Applications A D P-Channel HEXFET 3 6 RDS(on) = 0.09 S D Low VF Schottky Rectifier 4 5 G D Generation 5 Technology Schottky Vf = 0.52V SO-8 Footprint Top View Description The FETKYTM family of Co-pack

PD - 94531A IRF7475 HEXFET Power MOSFET Applications VDSS RDS(on) max Qg l High Frequency Point-of-Load Synchronous Buck Converter for 12V 15m @VGS = 4.5V 19nC Applications in Networking & Computing Systems. A A 1 8 S D Benefits 2 7 S D l Very Low RDS(on) at 4.5V VGS 3 6 S D l Ultra-Low Gate Impedance 4 5 G D l Fully Characterized Avalanche Voltage and Current SO-8

PD - 95310 IRF7422D2PbF Lead-Free www.irf.com 1 10/13/04 IRF7422D2PbF 2 www.irf.com IRF7422D2PbF www.irf.com 3 IRF7422D2PbF 4 www.irf.com IRF7422D2PbF www.irf.com 5 IRF7422D2PbF 6 www.irf.com IRF7422D2PbF SO-8 (Fetky) Package Outline INCHES MILLIMET ERS DIM D B MIN MAX MIN MAX 5 A .0532 .0688 1.35 1.75 A A1 .0040 .0098 0.10 0.25 b .013 .020 0.33 0.51 8 7 6 5 c

PD -96259 IRF7406GPbF HEXFET Power MOSFET l Generation V Technology l Ultra Low On-Resistance A l P-Channel Mosfet 1 8 S D l Surface Mount VDSS = -30V 2 7 S D l Available in Tape & Reel l Dynamic dv/dt Rating 3 6 S D l Fast Switching 4 5 G D l Lead-Free RDS(on) = 0.045 l Halogen-Free Top View Description Fifth Generation HEXFETs from International Rectifier utilize

PD- 94037A IRF7473 HEXFET Power MOSFET Applications VDSS RDS(on) max ID Telecom and Data-Com 24 and 48V input DC-DC converters 100V 26m @VGS = 10V 6.9A Motor Control Uninterrutible Power Supply Benefits Ultra Low On-Resistance A A High Speed Switching 1 8 S D Low Gate Drive Current Due to Improved 2 7 S D Gate Charge Characteristic 3 6 S D Im

IRF7410TRPbF-1 HEXFET Power MOSFET VDS -12 V A 1 8 S D RDS(on) max 7 2 7 (@V = -4.5V) D GS S RDS(on) max 3 6 S 9 m D (@V = -2.5V) GS 4 5 G D RDS(on) max 13 (@V = -1.8V) GS SO-8 Top View Qg (typical) 91 nC ID -16 A (@T = 25 C) A Features Benefits Industry-standard pinout SO-8 Package Multi-Vendor Compatibility Compatible with Existing Surface Mount T

PD- 93898A IRF7451 SMPS MOSFET HEXFET Power MOSFET Applications VDSS RDS(on) max ID High frequency DC-DC converters 150V 0.09 3.6A Benefits Low Gate to Drain Charge to Reduce A A 1 8 Switching Losses S D Fully Characterized Capacitance Including 2 7 S D Effective COSS to Simplify Design, (See 3 6 S D App. Note AN1001) 4 5 G D Fully Characteri

PD- 94022A IRF7425 HEXFET Power MOSFET Ultra Low On-Resistance ) VDSS RDS(on) max (m ) ID ) ) ) P-Channel MOSFET 20V 8.2@VGS = -4.5V -15A Surface Mount 13@VGS = -2.5V -13A Available in Tape & Reel A 1 8 Description S D These P-Channel HEXFET Power MOSFETs from 2 7 S D International Rectifier utilize advanced processing 3 6 techniques to achieve the ex

PD- 93899A IRF7453 SMPS MOSFET HEXFET Power MOSFET Applications VDSS RDS(on) max ID High frequency DC-DC converters 250V 0.23 @VGS = 10V 2.2A Benefits A Low Gate to Drain Charge to Reduce A 1 8 S D Switching Losses 2 7 S D Fully Characterized Capacitance Including Effective COSS to Simplify Design (See 3 6 S D App. Note AN1001) 4 5 G D Fully C

PD - 96127A IRF7404QPbF HEXFET Power MOSFET l Advanced Process Technology A 1 8 l Ultra Low On-Resistance S D VDSS = -20V l P Channel MOSFET 2 7 S D l Surface Mount 3 6 S D l Available in Tape & Reel 4 5 l 150 C Operating Temperature G D RDS(on) = 0.040 l Lead-Free Top View Description These HEXFET Power MOSFET's in package utilize the lastest processing techniqu

PD- 94024A IRF7424 HEXFET Power MOSFET Ultra Low On-Resistance ) VDSS RDS(on) max (m ) ID ) ) ) P-Channel MOSFET -30V 13.5@VGS = -10V -11A Surface Mount 22@VGS = -4.5V -8.8A Available in Tape & Reel A 1 8 Description S D These P-Channel MOSFETs from International 2 7 S D Rectifier utilize advanced processing techniques to 3 achieve the extremely low on-

PD - 9.1613A IRF7413A PRELIMINARY HEXFET Power MOSFET A Generation V Technology A 1 8 S D Ultra Low On-Resistance 2 7 N-Channel Mosfet VDSS = 30V S D Surface Mount 3 6 S D Available in Tape & Reel 4 5 G D Dynamic dv/dt Rating RDS(on) = 0.0135 Fast Switching Top View Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing

PD- 93895 IRF7464 SMPS MOSFET HEXFET Power MOSFET Applications VDSS RDS(on) max ID High frequency DC-DC converters 200V 0.73 1.2A Benefits Low Gate to Drain Charge to Reduce A A 1 8 S D Switching Losses 2 7 Fully Characterized Capacitance Including S D Effective COSS to Simplify Design, (See 3 6 S D App. Note AN1001) 4 5 G D Fully Characterized Avalanche Voltage

IRF7416PbF-1 HEXFET Power MOSFET VDS -30 V A 1 8 S D RDS(on) max 0.020 2 7 (@V = -10V) S D GS Qg (typical) 61 nC 3 6 S D ID 4 5 -10 A G D (@T = 25 C) A SO-8 Top View Features Benefits Industry-standard pinout SO-8 Package Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant, Halogen-Free Environmen

IRF7455PbF-1 SMPS MOSFET HEXFET Power MOSFET VDS 30 V A A 1 8 S D RDS(on) max 0.0075 2 7 (@V = 10V) S D GS Qg (typical) 37 nC 3 6 S D ID 4 5 15 A G D (@T = 25 C) A SO-8 Top View Applications l High Frequency DC-DC Converters with Synchronous Rectification Features Benefits Industry-standard pinout SO-8 Package Multi-Vendor Compatibility Compatible with Ex

IRF7473PbF-1 HEXFET Power MOSFET A VDS 100 V A 1 8 S D RDS(on) max 26 m 2 7 (@V = 10V) S D GS Qg (typical) 61 nC 3 6 S D ID 4 5 6.9 A G D (@T = 25 C) A SO-8 Top View Features Benefits Industry-standard pinout SO-8 Package Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant, Halogen-Free Environmen

PD- 95532 SMPS MOSFET IRF740AS/LPbF HEXFET Power MOSFET Applications VDSS Rds(on) max ID l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply 400V 0.55 10A l High speed power switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and D 2

PD - 96247 IRF7410GPbF HEXFET Power MOSFET l Ultra Low On-Resistance VDSS RDS(on) max ID l P-Channel MOSFET -12V 7m @VGS = -4.5V -16A l Surface Mount 9m @VGS = -2.5V -13.6A l Available in Tape & Reel 13m @VGS = -1.8V -11.5A l Lead-Free l Halogen-Free Description A These P-Channel HEXFET Power MOSFETs from 1 8 S D International Rectifier utilize advanced processing

PD - 95204 IRF740SPbF Lead-Free 4/29/04 Document Number 91055 www.vishay.com 1 IRF740SPbF Document Number 91055 www.vishay.com 2 IRF740SPbF Document Number 91055 www.vishay.com 3 IRF740SPbF Document Number 91055 www.vishay.com 4 IRF740SPbF Document Number 91055 www.vishay.com 5 IRF740SPbF Document Number 91055 www.vishay.com 6 IRF740SPbF D2Pak Package Outli

PD- 91411C IRF7421D1 PRELIMINARY FETKY MOSFET / Schottky Diode Co-packaged HEXFET Power A A 1 8 MOSFET and Schottky Diode A D VDSS = 30V Ideal For Synchronous Regulator 2 7 S D Applications 3 6 S D RDS(on) = 0.035 Generation V Technology 4 5 G D SO-8 Footprint Schottky Vf = 0.39V Top View Description The FETKYTM family of co-packaged HEX

StrongIRFET IRF7480MTRPbF DirectFET N-Channel Power MOSFET Application Brushed Motor drive applications VDSS 40V BLDC Motor drive applications RDS(on) typ. Battery powered circuits 0.95m Half-bridge and full-bridge topologies max 1.20m Synchronous rectifier applications Resonant mode power supplies ID (Silic

IRF7420PbF-1 HEXFET Power MOSFET A 1 8 VDS -12 V S D RDS(on) max 2 7 S D 14 m (@V = -4.5V) GS 3 6 S D RDS(on) max 17.5 m 4 5 (@V = -2.5V) GS G D RDS(on) max 26 m SO-8 Top View (@V = -1.8V) GS Qg (typical) 38 nC ID -11.5 A (@T = 25 C) A Features Benefits Industry-standard pinout SO-8 Package Multi-Vendor Compatibility Compatible with Existing Sur

PD - 95724 IRF7401PbF HEXFET Power MOSFET l Generation V Technology l Ultra Low On-Resistance A A 1 8 l N-Channel Mosfet S D VDSS = 20V l Surface Mount 2 7 S D l Available in Tape & Reel 3 6 S D l Dynamic dv/dt Rating 4 5 G D RDS(on) = 0.022 l Fast Switching l Lead-Free Top View Description Fifth Generation HEXFETs from International Rectifier utilize advanced proc

PD - 95284 IRF7490PbF HEXFET Power MOSFET Applications l High frequency DC-DC converters VDSS RDS(on) max Qg l Lead-Free 100V 39mW@VGS=10V 37nC Benefits l Low Gate-to-Drain Charge to Reduce A A Switching Losses 1 8 S D l Fully Characterized Capacitance Including 2 7 S D Effective COSS to Simplify Design, (See 3 6 S D App. Note AN1001) 4 5 l Fully Characterized Avalanche

PD- 92005 SMPS MOSFET IRF740AS/L HEXFET Power MOSFET Applications VDSS Rds(on) max ID Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply 400V 0.55 10A High speed power switching Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and dynamic dv/dt Ruggedness Fully Characterized Capacitance and D 2 TO-262 Pak Avalanch

PD- 93893A IRF7450 SMPS MOSFET HEXFET Power MOSFET Applications VDSS RDS(on) max ID High frequency DC-DC converters 200V 0.17 @VGS = 10V 2.5A Benefits A Low Gate to Drain Charge to Reduce A 1 8 S D Switching Losses 2 7 S D Fully Characterized Capacitance Including Effective COSS to Simplify Design (See 3 6 S D App. Note AN1001) 4 5 G D Fully C

IRF7413PbF-1 HEXFET Power MOSFET A VDS 30 V A 1 8 S D RDS(on) max 0.011 2 7 S D (@V = 10V) GS 3 6 Qg (typical) 52 nC S D ID 4 5 G D 13 A (@T = 25 C) A SO-8 Top View Features Benefits Industry-standard pinout SO-8 Package Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant, Halogen-Free Environme

PD - 94025 IRF7410 HEXFET Power MOSFET Ultra Low On-Resistance VDSS RDS(on) max ID P-Channel MOSFET -12V 7m @VGS = -4.5V -16A Surface Mount 9m @VGS = -2.5V -13.6A Available in Tape & Reel 13m @VGS = -1.8V -11.5A Description A These P-Channel HEXFET Power MOSFETs from 1 8 S D International Rectifier utilize advanced processing 2 7 techniques to achieve the extrem

PD - 95281A IRF7484PbF Typical Applications HEXFET Power MOSFET Industrial Motor Drive VDSS RDS(on) max (mW) ID 40V 10@VGS = 7.0V 14A Benefits l Advanced Process Technology l Ultra Low On-Resistance l Fast Switching l Repetitive Avalanche Allowed up to Tjmax. A A 1 8 l Lead-Free S D 2 7 S D Description 3 6 S D This Stripe Planar design of HEXFET Power 4 5 MOSFETs

PD - 94507 IRF7488 HEXFET Power MOSFET Applications l High frequency DC-DC converters VDSS RDS(on) max Qg 80V 29mW@VGS=10V 38nC Benefits l Low Gate-to-Drain Charge to Reduce A A Switching Losses 1 8 S D l Fully Characterized Capacitance Including 2 7 S D Effective COSS to Simplify Design, (See 3 6 S D App. Note AN1001) 4 5 l Fully Characterized Avalanche Voltage G D and

PD- 93840B IRF7456 SMPS MOSFET HEXFET Power MOSFET Applications VDSS RDS(on) max ID High Frequency DC-DC Converters 20V 0.0065 16A with Synchronous Rectification Benefits A A Ultra-Low RDS(on) at 4.5V VGS 1 8 S D Low Charge and Low Gate Impedance to 2 7 S D Reduce Switching Losses 3 6 S D Fully Characterized Avalanche Voltage 4 5 and Current G D SO-8 Top View

PD- 96128 SMPS MOSFET IRF7478QPbF HEXFET Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance VDSS RDS(on) max (mW) ID l N Channel MOSFET 60V 26@VGS = 10V 4.2A l Surface Mount 30@VGS = 4.5V 3.5A l Available in Tape & Reel l 150 C Operating Temperature l Automotive [Q101] Qualified A A l Lead-Free 1 8 S D Description 2 7 S D Specifically designed for Autom

PD- 95334 IRF7477PbF SMPS MOSFET HEXFET Power MOSFET Applications l High Frequency Synchronous Buck VDSS RDS(on) max (mW) ID Converters for Computers and 30V 8.5@VGS = 10V 14A Communications 10@VGS = 4.5V 11A l Lead-Free A A 1 8 S D Benefits 2 7 S D l Ultra-Low Gate Impedance 3 6 l Very Low RDS(on) S D l Fully Characterized Avalanche Voltage 4 5 G D and Current SO-8

PD - 95344 IRF7468PbF SMPS MOSFET HEXFET Power MOSFET Applications l High Frequency Isolated DC-DC VDSS RDS(on) max(mW) ID Converters with Synchronous Rectification 40V 15.5@VGS = 10V 9.4A for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power l Lead-Free A A 1 8 S D 2 7 Benefits S D 3 6 S D l Ultra-Low Gate Impedance 4 5 G D l V

IRF7469PbF-1 HEXFET Power MOSFET VDS 40 V RDS(on) max A A 17 1 8 S D (@V = 10V) GS m 2 7 RDS(on) max S D 21 (@V = 4.5V) GS 3 6 S D Qg (typical) 15 nC 4 5 G D ID 9.0 A SO-8 (@T = 25 C) A Top View Features Benefits Industry-standard pinout SO-8 Package Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS C

PD - 96113A IRF7452QPbF HEXFET Power MOSFET l Advanced Process Technology VDSS RDS(on) max ID l Ultra Low On-Resistance l N Channel MOSFET 100V 0.060 4.5A l Surface Mount l Available in Tape & Reel l 150 C Operating Temperature l Lead-Free A Description A 1 8 S D These HEXFET Power MOSFET's in SO-8 2 7 S D package utilize the lastest processing techniques 3 6 to ac

PD - 95459A IRF7459PbF SMPS MOSFET Applications HEXFET Power MOSFET l High Frequency DC-DC Isolated VDSS RDS(on) max ID Converters with Synchronous Rectification 20V 9.0m 12A for Telecom and Industrial use l High Frequency Buck Converters for Computer Processor Power l Lead-Free Benefits A A 1 8 S D l Ultra-Low Gate Impedance 2 7 S D l Very Low RDS(on) at 4.5V VGS 3

PD -94056 IRF7433 HEXFET Power MOSFET Ultra Low On-Resistance VDSS RDS(on) max ID P-Channel MOSFET -12V 24m @VGS = -4.5V -8.7A Surface Mount 30m @VGS = -2.5V -7.4A Available in Tape & Reel 46m @VGS = -1.8V -6.3A Description A 1 8 S D These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to 2 7 S D achieve the extremely low on-

PD- 95725 IRF7451PbF SMPS MOSFET HEXFET Power MOSFET Applications VDSS RDS(on) max ID l High frequency DC-DC converters 150V 0.09W 3.6A l Lead-Free Benefits l Low Gate to Drain Charge to Reduce A A 1 8 Switching Losses S D l Fully Characterized Capacitance Including 2 7 S D Effective COSS to Simplify Design, (See 3 6 S D App. Note AN1001) 4 5 G D l Fully Characterized

PD-95274 IRF7465PbF SMPS MOSFET HEXFET Power MOSFET Applications VDSS RDS(on) max ID l High frequency DC-DC converters 150V 0.28W@VGS = 10V 1.9A l Lead-Free Benefits A l Low Gate to Drain Charge to Reduce A 1 8 S D Switching Losses 2 7 S D l Fully Characterized Capacitance Including Effective COSS to Simplify Design (See 3 6 S D App. Note AN1001) 4 5 G D l Fully Chara

PD- 94828 SMPS MOSFET IRF740APbF HEXFET Power MOSFET Applications VDSS Rds(on) max ID l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply 400V 0.55 10A l High speed power switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanch

PD- 94094A IRF7477 SMPS MOSFET HEXFET Power MOSFET Applications ) VDSS RDS(on) max (m ) ID ) ) ) High Frequency Synchronous Buck 30V 8.5@VGS = 10V 14A Converters for Computers and 10@VGS = 4.5V 11A Communications Benefits A A Ultra-Low Gate Impedance 1 8 S D Very Low RDS(on) 2 7 S D Fully Characterized Avalanche Voltage 3 6 S D and Current 4 5 G

PD- 95726 SMPS MOSFET IRF7471PbF Applications l High Frequency Isolated DC-DC HEXFET Power MOSFET Converters with Synchronous Rectification VDSS RDS(on) max ID for Telecom and Industrial Use l High Frequency Buck Converters for 40V 13m 10A Computer Processor Power l Lead-Free Benefits A A 1 8 l Ultra-Low Gate Impedance S D l Very Low RDS(on) 2 7 S D l Fully Characte

PD - 95248 SMPS MOSFET IRF7463PbF Applications HEXFET Power MOSFET l High Frequency DC-DC Isolated Converters with Synchronous Rectification VDSS RDS(on) max ID for Telecom and Industrial use 30V 8m 14A l High Frequency Buck Converters for Computer Processor Power l Lead-Free Benefits A A 1 8 S D l Ultra-Low Gate Impedance 2 7 S D l Very Low RDS(on) at 4.5V VGS 3 6 S

IRF7404TRPbF-1 HEXFET Power MOSFET VDS -20 V A 1 8 S D RDS(on) max 0.04 2 7 (@V = -4.5V) S D GS Qg 50 nC 3 6 S D ID 4 5 -6.7 A G D (@T = 25 C) A Top View SO-8 Features Benefits Industry-standard pinout SO-8 Package Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant, Halogen-Free Environmentally Frie

PD- 95286 IRF7469PbF SMPS MOSFET HEXFET Power MOSFET Applications VDSS RDS(on) max(mW) ID l High Frequency Isolated DC-DC 40V 17@VGS = 10V 9.0A Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for A Computer Processor Power A 1 8 S D l Lead-Free 2 7 S D 3 6 S D Benefits 4 5 G D l Ultra-Low Gate Impedance l Ver

PD - 94498 IRF7492 HEXFET Power MOSFET VDSS RDS(on) max ID Applications High frequency DC-DC converters 200V 79m @VGS = 10V 3.7A Benefits A A Low Gate to Drain Charge to Reduce 1 8 S D Switching Losses 2 7 S D Fully Characterized Capacitance Including 3 6 S D Effective COSS to Simplify Design, (See 4 App. Note AN1001) 5 G D Fully Characterized A

PD - 95308 IRF7460PbF SMPS MOSFET HEXFET Power MOSFET Applications l High Frequency Isolated DC-DC VDSS RDS(on) max(mW) ID Converters with Synchronous Rectification for Telecom and Industrial Use 20V 10@VGS = 10V 12A l High Frequency Buck Converters for Computer Processor Power l Lead-Free A A 1 8 S D Benefits 2 7 S D l Ultra-Low Gate Impedance 3 6 S D l Very Low RDS(o

PD- 93897C IRF7452 SMPS MOSFET HEXFET Power MOSFET Applications VDSS RDS(on) max ID High frequency DC-DC converters 100V 0.060 4.5A Benefits Low Gate to Drain Charge to Reduce A A 1 8 Switching Losses S D 2 7 Fully Characterized Capacitance Including S D Effective COSS to Simplify Design, (See 3 6 S D App. Note AN1001) 4 5 G D Fully Characterized Avalanche Volta

PD - 95283 IRF7488PbF HEXFET Power MOSFET Applications VDSS RDS(on) max Qg l High frequency DC-DC converters 80V 29mW@VGS=10V 38nC l Lead-Free A Benefits A 1 8 S D l Low Gate-to-Drain Charge to Reduce 2 7 S D Switching Losses 3 6 S D l Fully Characterized Capacitance Including 4 5 G D Effective COSS to Simplify Design, (See App. Note AN1001) SO-8 Top View l Fully Cha

IRF7401PbF-1 HEXFET Power MOSFET VDS 20 V A A 1 8 S D RDS(on) max 0.022 2 7 (@V = 4.5V) S D GS Qg 48 nC 3 6 S D ID 4 5 8.7 A G D (@T = 25 C) A SO-8 Top View Features Benefits Industry-standard pinout SO-8 Package Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant, Halogen-Free Environmentally Fri

PD- 95532 SMPS MOSFET IRF740AS/LPbF HEXFET Power MOSFET Applications VDSS Rds(on) max ID l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply 400V 0.55 10A l High speed power switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and 2

PD-93896 IRF7465 SMPS MOSFET HEXFET Power MOSFET Applications VDSS RDS(on) max ID High frequency DC-DC converters 150V 0.28 @VGS = 10V 1.9A Benefits A Low Gate to Drain Charge to Reduce A 1 8 S D Switching Losses 2 7 S D Fully Characterized Capacitance Including Effective COSS to Simplify Design (See 3 6 S D App. Note AN1001) 4 5 G D Fully Cha

IRF7425PbF-1 HEXFET Power MOSFET VDS -20 V A 1 8 S D RDS(on) max 8.2 2 7 (@V = -4.5V) S D GS m RDS(on) max 3 6 S D 13 (@V = -2.5V) GS 4 5 G D Qg (typical) 87 nC ID SO-8 -15 A Top View (@T = 25 C) A Features Benefits Industry-standard pinout SO-8 Package Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoH

PD - 94537 IRF7491 HEXFET Power MOSFET Applications VDSS RDS(on) max ID High frequency DC-DC converters 80V 16m @VGS = 10V 9.7A Benefits A A Low Gate to Drain Charge to Reduce 1 8 S D Switching Losses 2 7 S D Fully Characterized Capacitance Including 3 6 S D Effective COSS to Simplify Design, (See App. Note AN1001) 4 5 G D Fully Characterized Avalanche Voltage SO-8

PD- 95307 IRF7453PbF SMPS MOSFET HEXFET Power MOSFET Applications VDSS RDS(on) max ID l High frequency DC-DC converters 250V 0.23W@VGS = 10V 2.2A l Lead-Free Benefits A l Low Gate to Drain Charge to Reduce A 1 8 S D Switching Losses 2 7 S D l Fully Characterized Capacitance Including Effective COSS to Simplify Design (See 3 6 S D App. Note AN1001) 4 5 G D l Fully Char

PD - 94446A IRF7484 Typical Applications Relay replacement HEXFET Power MOSFET Anti-lock Braking System Air Bag VDSS RDS(on) max (mW) ID Benefits 40V 10@VGS = 7.0V 14A Advanced Process Technology Ultra Low On-Resistance Fast Switching Repetitive Avalanche Allowed up to Tjmax A A 1 8 S D 2 7 S D Description 3 6 S D Specifically designed for Automotive applications

PD - 9.1246C IRF7404 HEXFET Power MOSFET Generation V Technology A 1 8 S D Ultra Low On-Resistance VDSS = -20V 2 7 P-Channel Mosfet S D Surface Mount 3 6 S D Available in Tape & Reel 4 5 G D RDS(on) = 0.040 Dynamic dv/dt Rating Fast Switching Top View Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to a

PD - 95249A IRF7456PbF SMPS MOSFET HEXFET Power MOSFET Applications VDSS RDS(on) max ID l High Frequency DC-DC Converters 20V 0.0065 16A with Synchronous Rectification l Lead-Free Benefits A A l Ultra-Low RDS(on) at 4.5V VGS 1 8 S D l Low Charge and Low Gate Impedance to 2 7 S D Reduce Switching Losses 3 6 S D l Fully Characterized Avalanche Voltage 4 5 and Curren

PD- 94055A IRF7478 SMPS MOSFET HEXFET Power MOSFET Applications ) VDSS RDS(on) max (m ) ID ) ) ) High frequency DC-DC converters 60V 26@VGS = 10V 4.2A 30@VGS = 4.5V 3.5A Benefits A A 1 8 S D Low Gate to Drain Charge to Reduce 2 7 Switching Losses S D Fully Characterized Capacitance Including 3 6 S D Effective COSS to Simplify Design, (See 4 5 G D A

StrongIRFET IRF7483MTRPbF DirectFET N-Channel Power MOSFET Application Brushed Motor drive applications VDSS 40V BLDC Motor drive applications RDS(on) typ. Battery powered circuits 1.7m Half-bridge and full-bridge topologies max 2.3m Synchronous rectifier applications Resonant mode power supplies ID (Silicon

IRF7406TRPbF-1 HEXFET Power MOSFET VDS -30 V A 1 8 S D RDS(on) max 0.045 2 7 (@V = -10V) S D GS Qg (max) 59 nC 3 6 S D ID 4 5 G D -5.8 A (@T = 25 C) A SO-8 Top View Features Benefits Industry-standard pinout SO-8 Package Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant, Halogen-Free Environment

PD- 95268 IRF7458PbF SMPS MOSFET HEXFET Power MOSFET Applications l High Frequency Isolated DC-DC VDSS RDS(on) max ID Converters with Synchronous Rectification 30V 8.0m 14A for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power l Lead-Free A A 1 8 Benefits S D 2 7 S D l Ultra-Low Gate Impedance 3 6 l Very Low RDS(on) S D l Ful

PD- 95273 IRF7464PbF SMPS MOSFET HEXFET Power MOSFET Applications VDSS RDS(on) max ID l High frequency DC-DC converters 200V 0.73 1.2A l Lead-Free Benefits l Low Gate to Drain Charge to Reduce A A 1 8 S D Switching Losses 2 7 l Fully Characterized Capacitance S D Including Effective COSS to Simplify 3 6 S D Design, (See App. Note AN1001) 4 5 G D l Fully Characteriz

IRF7478PbF-1 SMPS MOSFET HEXFET Power MOSFET A VDS 60 V A 1 8 S D RDS(on) max 26 2 7 (@V = 10V) S D GS m RDS(on) max 3 6 S D 30 (@V = 4.5V) GS 4 5 G D Qg (typical) 21 nC ID SO-8 7.0 A Top View (@T = 25 C) A Applications l High frequency DC-DC converters Features Benefits Industry-standard pinout SO-8 Package Multi-Vendor Compatibility Compatible wit

PD- 95306 IRF7450PbF SMPS MOSFET HEXFET Power MOSFET Applications VDSS RDS(on) max ID l High frequency DC-DC converters 200V 0.17W@VGS = 10V 2.5A l Lead-Free Benefits A l Low Gate to Drain Charge to Reduce A 1 8 S D Switching Losses 2 7 S D l Fully Characterized Capacitance Including Effective COSS to Simplify Design (See 3 6 S D App. Note AN1001) 4 5 G D l Fully Char

PD - 9.1244C IRF7401 HEXFET Power MOSFET Generation V Technology A A 1 8 Ultra Low On-Resistance S D VDSS = 20V 2 7 N-Channel Mosfet S D Surface Mount 3 6 S D Available in Tape & Reel 4 5 G D RDS(on) = 0.022 Dynamic dv/dt Rating Fast Switching Top View Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to

PD - 94278 IRF7420 HEXFET Power MOSFET Ultra Low On-Resistance VDSS RDS(on) max ID P-Channel MOSFET -12V 14m @VGS = -4.5V -11.5A Surface Mount 17.5m @VGS = -2.5V -9.8A Available in Tape & Reel 26m @VGS = -1.8V -8.1A Description A These P-Channel HEXFET Power MOSFETs from 1 8 S D International Rectifier utilize advanced processing 2 7 techniques to achieve the ex

PD - 93851A IRF7402 HEXFET Power MOSFET Generation V Technology A A Ultra Low On-Resistance 1 8 S D N-Channel MOSFET VDSS = 20V 2 7 S D Very Small SOIC Package 3 6 S D Low Profile (

PD - 93886D IRF7460 SMPS MOSFET HEXFET Power MOSFET Applications ) VDSS RDS(on) max(m ) ID ) ) ) High Frequency Isolated DC-DC 20V 10@VGS = 10V 12A Converters with Synchronous Rectification for Telecom and Industrial Use High Frequency Buck Converters for Computer Processor Power A A 1 8 S D Benefits 2 7 S D Ultra-Low Gate Impedance 3 6 S D Very L

PD - 93914D IRF7468 SMPS MOSFET HEXFET Power MOSFET Applications ) VDSS RDS(on) max(m ) ID ) ) ) High Frequency Isolated DC-DC 40V 15.5@VGS = 10V 9.4A Converters with Synchronous Rectification for Telecom and Industrial Use High Frequency Buck Converters for Computer Processor Power A A 1 8 S D Benefits 2 7 S D Ultra-Low Gate Impedance 3 6 S D Ver

PD - 95278 IRF7475PbF HEXFET Power MOSFET Applications VDSS RDS(on) max Qg l High Frequency Point-of-Load Synchronous Buck Converter for 12V 15m @VGS = 4.5V 19nC Applications in Networking & Computing Systems. A l Lead-Free A 1 8 S D 2 7 S D Benefits 3 6 S D l Very Low RDS(on) at 4.5V VGS 4 5 G D l Ultra-Low Gate Impedance SO-8 l Fully Characterized Avalanche Voltage

PD - 95203 IRF7404PbF HEXFET Power MOSFET l Generation V Technology l Ultra Low On-Resistance A 1 8 S D l P-Channel Mosfet VDSS = -20V 2 7 S D l Surface Mount 3 6 S l Available in Tape & Reel D 4 5 l Dynamic dv/dt Rating G D RDS(on) = 0.040 l Fast Switching Top View l Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced proces

AUTOMOTIVE GRADE PD - 97757 AUIRF7484Q Features HEXFET Power MOSFET l Advanced Planar Technology A A 1 8 l Low On-Resistance S D V(BR)DSS 40V 2 7 S D l 150 C Operating Temperature 3 6 S D RDS(on) max. 10m l Fast Switching 4 5 G D l Fully Avalanche Rated ID 14A Top View l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified*

PD- 93842B IRF7455 SMPS MOSFET HEXFET Power MOSFET Applications VDSS RDS(on) max ID High Frequency DC-DC Converters 30V 0.0075 15A with Synchronous Rectification Benefits Ultra-Low RDS(on) at 4.5V VGS A A Low Charge and Low Gate Impedance to 1 8 S D Reduce Switching Losses 2 7 S D Fully Characterized Avalanche Voltage 3 6 S D and Current 4 5 G D SO-8 Top View

AUTOMOTIVE GRADE AUIRF7416Q HEXFET Power MOSFET Features l Advanced Process Technology A 1 8 S D V(BR)DSS -30V l Low On-Resistance 2 7 S D l Logic Level Gate Drive 3 6 S D RDS(on) max. 0.02 l P-Channel MOSFET 4 5 G D l Dynamic dV/dT Rating ID -10A Top View l 150 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free, RoHS Compliant l Autom

PD - 9.1356D IRF7416 HEXFET Power MOSFET Generation V Technology A 1 8 Ultra Low On-Resistance S D P-Channel Mosfet VDSS = -30V 2 7 S D Surface Mount 3 6 S D Available in Tape & Reel 4 5 Dynamic dv/dt Rating G D RDS(on) = 0.02 Fast Switching Top View Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to ach

PD - 94803A AUTOMOTIVE MOSFET IRF7484Q Typical Applications Relay replacement HEXFET Power MOSFET Anti-lock Braking System Air Bag VDSS RDS(on) max (mW) ID Benefits 40V 10@VGS = 7.0V 14A Advanced Process Technology Ultra Low On-Resistance Fast Switching Repetitive Avalanche Allowed up to Tjmax A A 1 8 S D 2 7 S D Description 3 6 S D Specifically designed for Aut

PD - 96028B IRF7410PbF HEXFET Power MOSFET l Ultra Low On-Resistance VDSS RDS(on) max ID l P-Channel MOSFET -12V 7m @VGS = -4.5V -16A l Surface Mount 9m @VGS = -2.5V -13.6A l Available in Tape & Reel 13m @VGS = -1.8V -11.5A l Lead-Free Description A These P-Channel HEXFET Power MOSFETs from 1 8 S D International Rectifier utilize advanced processing 2 7 techniques

PD- 93951A IRF7469 SMPS MOSFET HEXFET Power MOSFET Applications ) VDSS RDS(on) max(m ) ID ) ) ) High Frequency Isolated DC-DC 40V 17@VGS = 10V 9.0A Converters with Synchronous Rectification for Telecom and Industrial Use High Frequency Buck Converters for A Computer Processor Power A 1 8 S D Benefits 2 7 S D Ultra-Low Gate Impedance 3 6 S D Very Lo

PD - 96124 IRF7416QPbF HEXFET Power MOSFET l Advanced Process Technology A 1 8 l Ultra Low On-Resistance S D l P Channel MOSFET VDSS = -30V 2 7 S D l Surface Mount 3 6 l Available in Tape & Reel S D l 150 C Operating Temperature 4 5 G D RDS(on) = 0.02 l Automotive [Q101] Qualified l Lead-Free Top View Description Specifically designed for Automotive applications,

PD- 95730 IRF7466PbF SMPS MOSFET Applications HEXFET Power MOSFET l High Frequency Isolated DC-DC Converters with Synchronous Rectification VDSS RDS(on) max(mW) ID for Telecom and Industrial Use 30V 12.5@VGS = 10V 11A l High Frequency Buck Converters for Computer Processor Power l Lead-Free A A 1 8 S D Benefits 2 7 S D l Ultra-Low Gate Impedance 3 6 S D l Very Low RDS

PD - 96250 IRF7413GPbF HEXFET Power MOSFET l Generation V Technology l Ultra Low On-Resistance A A 1 8 l N-Channel Mosfet S D l Surface Mount 2 7 S D VDSS = 30V l Available in Tape & Reel l Dynamic dv/dt Rating 3 6 S D l Fast Switching 4 5 G D l 100% RG Tested RDS(on) = 0.011 l Lead-Free l Halogen-Free Top View Description Fifth Generation HEXFETs from International

PD - 95349C IRF7494PbF HEXFET Power MOSFET Applications VDSS RDS(on) max ID l High frequency DC-DC converters 44m 150V @VGS = 10V 5.1A l Lead-Free Benefits A A l Low Gate to Drain Charge to Reduce 1 8 S D Switching Losses 2 7 S D l Fully Characterized Capacitance Including 3 6 S D Effective COSS to Simplify Design, (See App. Note AN1001) 4 5 G D l Fully Characterized

PD- 95276 IRF7470PbF SMPS MOSFET Applications HEXFET Power MOSFET l High Frequency DC-DC Converters VDSS RDS(on) max ID with Synchronous Rectification 40V 13m 10A l Lead-Free Benefits l Ultra-Low Gate Impedance A A 1 8 l Very Low RDS(on) at 4.5V VGS S D 2 7 S D l Fully Characterized Avalanche Voltage and Current 3 6 S D 4 5 G D SO-8 Top View Absolute Maximum Rati

IRF7493PbF-1 HEXFET Power MOSFET VDS 80 V A A 1 8 S D RDS(on) max 15 m 2 7 (@V = 10V) GS S D Qg (typical) 35 nC 3 6 S D ID 4 5 9.3 A G D (@T = 25 C) A SO-8 Top View Features Benefits Industry-standard pinout SO-8 Package Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant, Halogen-Free Environmenta

PD- 94097 IRF7474 HEXFET Power MOSFET Applications VDSS RDS(on) max ID Telecom and Data-Com 24 and 48V 100V 63m @VGS = 10V 4.5A input DC-DC converters Motor Control Uninterruptible Power Supply Benefits A Low On-Resistance A 1 8 S D High Speed Switching 2 7 Low Gate Drive Current Due to Improved S D Gate Charge Characteristic 3 6 S D Improv

PD- 93843A IRF7463 SMPS MOSFET HEXFET Power MOSFET Applications VDSS RDS(on) max ID High Frequency DC-DC Converters 30V 0.008 14A with Synchronous Rectification Benefits Ultra-Low RDS(on) at 4.5V VGS Low Charge and Low Gate Impedance to Reduce Switching Losses Fully Characterized Avalanche Voltage and Current SO-8 Absolute Maximum Ratings Parameter Max. Units ID @ TA

PD-96256 IRF7424GPbF HEXFET Power MOSFET l Ultra Low On-Resistance VDSS RDS(on) max (mW) ID l P-Channel MOSFET -30V 13.5@VGS = -10V -11A l Surface Mount 22@VGS = -4.5V -8.8A l Available in Tape & Reel l Lead-Free l Halogen-Free A 1 8 Description S D These P-Channel MOSFETs from International 2 7 S D Rectifier utilize advanced processing techniques to 3 achieve the extremel

PD - 9.1245B PRELIMINARY IRF7403 HEXFET Power MOSFET Generation V Technology A Ultra Low On-Resistance A 1 8 S D N-Channel Mosfet VDSS = 30V 2 7 S D Surface Mount 3 6 Available in Tape & Reel S D Dynamic dv/dt Rating 4 5 G D RDS(on) = 0.022 Fast Switching Top View Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing te

PD - 94872 IRF740PbF Lead-Free 12/5/03 Document Number 91053 www.vishay.com 1 IRF740PbF Document Number 91053 www.vishay.com 2 IRF740PbF Document Number 91053 www.vishay.com 3 IRF740PbF Document Number 91053 www.vishay.com 4 IRF740PbF Document Number 91053 www.vishay.com 5 IRF740PbF Document Number 91053 www.vishay.com 6 IRF740PbF TO-220AB Package Outline

PD- 95032 SMPS MOSFET IRF7457PbF HEXFET Power MOSFET Applications l High Frequency DC-DC Isolated VDSS RDS(on) max ID Converters with Synchronous Rectification 20V 7.0m 15A for Telecom and Industrial use l High Frequency Buck Converters for Computer Processor Power l Lead-Free Benefits A A 1 8 S D l Ultra-Low RDS(on) 2 7 l Very Low Gate Impedance S D l Fully Character

PD- 94036B SMPS MOSFET IRF7471 Applications HEXFET Power MOSFET High Frequency Isolated DC-DC VDSS RDS(on) max ID Converters with Synchronous Rectification 40V 13m 10A for Telecom and Industrial Use High Frequency Buck Converters for Computer Processor Power Benefits A A 1 8 Ultra-Low Gate Impedance S D Very Low RDS(on) 2 7 S D Fully Characterized Avalanche Volt

AUTOMOTIVE GRADE AUIRF7478Q Features HEXFET Power MOSFET Advanced Planar Technology A A V(BR)DSS 1 8 60V Low On-Resistance S D Logic Level Gate Drive 2 7 S D RDS(on) typ. 20m Dynamic dV/dT Rating 3 6 S D 150 C Operating Temperature max. 26m Fast Switching 4 5 G D Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax ID 7.0A Top View Lead-Free,

PD - 96252A IRF7416GPbF HEXFET Power MOSFET l Generation V Technology l Ultra Low On-Resistance A 1 8 S D l P-Channel Mosfet VDSS = -30V l Surface Mount 2 7 S D l Available in Tape & Reel 3 6 l Dynamic dv/dt Rating S D l Fast Switching 4 5 G D l Lead-Free RDS(on) = 0.02 l Halogen-Free Top View Description Fifth Generation HEXFETs from International Rectifier utilize

PD - 94508 IRF7490 HEXFET Power MOSFET Applications l High frequency DC-DC converters VDSS RDS(on) max Qg 100V 39mW@VGS=10V 37nC Benefits l Low Gate-to-Drain Charge to Reduce A A Switching Losses 1 8 S D l Fully Characterized Capacitance Including 2 7 S D Effective COSS to Simplify Design, (See 3 6 S D App. Note AN1001) 4 5 l Fully Characterized Avalanche Voltage G D an

PD - 95279 IRF7476PbF HEXFET Power MOSFET Applications VDSS RDS(on) max ID l High Frequency 3.3V and 5V input Point- 12V 8.0mW@VGS = 4.5V 15A of-Load Synchronous Buck Converters for Netcom and Computing Applications. l Power Management for Netcom, A A Computing and Portable Applications. 1 8 S D l Lead-Free 2 7 S D 3 6 S D Benefits 4 5 G D l Ultra-Low Gate Impedance SO

PD- 95280 IRF7478PbF SMPS MOSFET HEXFET Power MOSFET Applications VDSS RDS(on) max (mW) ID l High frequency DC-DC converters 60V 26@VGS = 10V 4.2A l Lead-Free 30@VGS = 4.5V 3.5A Benefits A A 1 8 S D l Low Gate to Drain Charge to Reduce 2 7 Switching Losses S D l Fully Characterized Capacitance Including 3 6 S D Effective COSS to Simplify Design, (See 4 5 G D App. Note

PD - 94654 PROVISIONAL IRF7493 HEXFET Power MOSFET Applications VDSS RDS(on) max ID l High frequency DC-DC converters 80V 15m @VGS = 10V 9.2A Benefits A A l Low Gate to Drain Charge to Reduce 1 8 S D Switching Losses 2 7 S D l Fully Characterized Capacitance Including 3 6 S D Effective COSS to Simplify Design, (See App. Note AN1001) 4 5 G D l Fully Characterized Avalanch

PD - 95137A IRF7416PbF l Generation V Technology HEXFET Power MOSFET l Ultra Low On-Resistance A l P-Channel Mosfet 1 8 S D l Surface Mount VDSS = -30V 2 7 S D l Available in Tape & Reel 3 6 l Dynamic dv/dt Rating S D l Fast Switching 4 5 G D RDS(on) = 0.02 l Lead-Free Top View Description Fifth Generation HEXFETs from International Rectifier utilize advanced proces

PD - 93883B IRF7467 SMPS MOSFET Applications HEXFET Power MOSFET High Frequency DC-DC Isolated VDSS RDS(on) max ID Converters with Synchronous Rectification 30V 12m 11A for Telecom and Industrial use High Frequency Buck Converters for Computer Processor Power Benefits A A Ultra-Low Gate Impedance 1 8 S D Very Low RDS(on) at 4.5V VGS 2 7 S D Fully Characterized Ava

SMPS MOSFET IRF7456PbF-1 HEXFET Power MOSFET VDS 20 V A A RDS(on) max 1 8 S D 0.0065 (@V = 10V) GS 2 7 S D Qg (typical) 41 nC 3 6 S D ID 16 A 4 5 G D (@T = 25 C) A SO-8 Top View Applications l High Frequency DC-DC Converters with Synchronous Rectification Features Benefits Industry-standard pinout SO-8 Package Multi-Vendor Compatibility Compatible with Exi

IRF7457PbF-1 HEXFET Power MOSFET VDS 20 V RDS(on) max A A 7.0 m 1 8 S D (@V = 10V) GS 2 7 RDS(on) max S D 10.5 m (@V = 4.5V) 3 6 GS S D Qg (typical) 28 nC 4 5 G D ID 15 A SO-8 (@T = 25 C) A Top View Features Benefits Industry-standard pinout SO-8 Package Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS

PD - 96249 IRF7413ZGPbF HEXFET Power MOSFET Applications VDSS RDS(on) max ID l Control FET for Notebook Processor 10m @VGS = 10V Power 30V 13A l Control and Synchronous Rectifier MOSFET for Graphics Cards and POL A Converters in Computing, Networking A 1 8 S D and Telecommunication Systems 2 7 S D 3 6 S D Benefits 4 5 l Ultra-Low Gate Impedance G D l Very Low RDS(on)

PD- 93885B IRF7459 SMPS MOSFET Applications HEXFET Power MOSFET High Frequency DC-DC Isolated VDSS RDS(on) max ID Converters with Synchronous Rectification 20V 9.0m 12A for Telecom and Industrial use High Frequency Buck Converters for Computer Processor Power Benefits A A 1 8 S D Ultra-Low Gate Impedance 2 7 S D Very Low RDS(on) at 4.5V VGS 3 6 Fully Characteriz

PD - 9.1247C IRF7406 PRELIMINARY HEXFET Power MOSFET Generation V Technology A 1 8 Ultra Low On-Resistance S D VDSS = -30V 2 7 P-Channel Mosfet S D Surface Mount 3 6 S D Available in Tape & Reel 4 5 G D RDS(on) = 0.045 Dynamic dv/dt Rating Fast Switching Top V iew Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing te

StrongIRFET IRF7483MTRPbF DirectFET N-Channel Power MOSFET Application Brushed Motor drive applications VDSS 40V BLDC Motor drive applications RDS(on) typ. Battery powered circuits 1.7m Half-bridge and full-bridge topologies max 2.3m Synchronous rectifier applications Resonant mode power supplies ID (Silicon

IRF740S N - CHANNEL 400V - 0.48 - 10A- D2PAK PowerMESH MOSFET TYPE VDSS RDS(on) ID IRF740S 400 V

IRF740 N - CHANNEL 400V - 0.48 - 10 A - TO-220 PowerMESH MOSFET TYPE VDSS RDS(on) ID IRF740 400 V

Advanced Power MOSFET FEATURES BVDSS = 400 V Avalanche Rugged Technology RDS(on) = 0.55 Rugged Gate Oxide Technology Lower Input Capacitance ID = 10 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 400V Lower RDS(ON) 0.437 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Va

IRF740B www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY Optimal design VDS (V) at TJ max. 450 - Low area specific on-resistance RDS(on) max. ( ) at 25 C VGS = 10 V 0.6 - Low input capacitance (Ciss) Available Qg max. (nC) 30 - Reduced capacitive switching losses Qgs (nC) 4 - High body diode ruggedness Qgd (nC) 7 - Avalanche energy rated (U

IRF740A, SiHF740A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 400 Requirement Available RDS(on) ( )VGS = 10 V 0.55 Improved Gate, Avalanche and Dynamic dV/dt RoHS* Qg (Max.) (nC) 36 COMPLIANT Ruggedness Qgs (nC) 9.9 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 16 and Current Configur

IRF740S, SiHF740S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) 400 Surface Mount RDS(on) ( )VGS = 10 V 0.55 Available in Tape and Reel Qg (Max.) (nC) 63 Dynamic dV/dt Rating Qgs (nC) 9.0 Repetitive Avalanche Rated Fast Switching Qgd (nC) 32 Ease of Paralleling Configuration Sin

IRF740LC, SiHF740LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Ultra Low Gate Charge VDS (V) 400 Reduced Gate Drive Requirement Available RDS(on) ( )VGS = 10 V 0.55 Enhanced 30 V VGS Rating RoHS* COMPLIANT Qg (Max.) (nC) 39 Reduced Ciss, Coss, Crss Qgs (nC) 10 Extremely High Frequency Operation Qgd (nC) 19 Repetitive Avalanche Rated Comp

IRF740AS, SiHF740AS, IRF740AL, SiHF740AL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 400 Definition RDS(on) ( )VGS = 10 V 0.55 Low Gate Charge Qg Results in Simple Drive Requirement Qg (Max.) (nC) 36 Improved Gate, Avalanche and Dynamic dV/dt Qgs (nC) 9.9 Ruggedness Qgd (nC) 16 Fully Characterized Capac

IRF740, SiHF740 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 400 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.55 RoHS* Fast Switching Qg (Max.) (nC) 63 COMPLIANT Ease of Paralleling Qgs (nC) 9.0 Qgd (nC) 32 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D DES

IRF740LC, SiHF740LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Ultra Low Gate Charge VDS (V) 400 Reduced Gate Drive Requirement Available RDS(on) ( )VGS = 10 V 0.55 Enhanced 30 V VGS Rating RoHS* COMPLIANT Qg (Max.) (nC) 39 Reduced Ciss, Coss, Crss Qgs (nC) 10 Extremely High Frequency Operation Qgd (nC) 19 Repetitive Avalanche Rated Comp

IRF740S, SiHF740S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) 400 Surface Mount RDS(on) ( )VGS = 10 V 0.55 Available in Tape and Reel Qg (Max.) (nC) 63 Dynamic dV/dt Rating Qgs (nC) 9.0 Repetitive Avalanche Rated Fast Switching Qgd (nC) 32 Ease of Paralleling Configuration Sin

IRF740A, SiHF740A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 400 Requirement Available RDS(on) ( )VGS = 10 V 0.55 Improved Gate, Avalanche and Dynamic dV/dt RoHS* Qg (Max.) (nC) 36 COMPLIANT Ruggedness Qgs (nC) 9.9 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 16 and Current Configur

IRF740, SiHF740 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 400 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.55 RoHS* Fast Switching Qg (Max.) (nC) 63 COMPLIANT Ease of Paralleling Qgs (nC) 9.0 Qgd (nC) 32 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D DES

StrongIRFET IRF7480MTRPbF DirectFET N-Channel Power MOSFET Application Brushed Motor drive applications VDSS 40V BLDC Motor drive applications RDS(on) typ. Battery powered circuits 0.95m Half-bridge and full-bridge topologies max 1.20m Synchronous rectifier applications Resonant mode power supplies ID (Silic

AUTOMOTIVE GRADE AUIRF7484Q HEXFET Power MOSFET Features Advanced Planar Technology A VDSS A 1 8 Low On-Resistance 40V S D 2 7 S D 150 C Operating Temperature RDS(on) max. 3 6 S D Fast Switching 10m 4 5 G D Fully Avalanche Rated ID Top View Repetitive Avalanche Allowed up to Tjmax 14A Lead-Free, RoHS Compliant Auto

Spec. No. MOS200512 HI-SINCERITY Issued Date 2005.09.01 Revised Date 2005.09.22 MICROELECTRONICS CORP. Page No. 1/4 HIRF740 Series Pin Assignment HIRF740 / HIRF740F Tab N-Channel Power MOSFET (400V, 10A) 3-Lead Plastic TO-220AB Package Code E Pin 1 Gate Pin 2 & Tab Drain Description Pin 3 Source This N-Channel MOSFETs provide the designer with the best combination o

IRF740 Rev.H Jul.-2018 DATA SHEET / Descriptions TO-220 N MOS N-CHANNEL MOSFET in a TO-220 Plastic Package. / Features , , Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for high efficiency swi

SMD Type MOSFET N-Channel MOSFET IRF7413 (KRF7413) SOP-8 Features VDS (V) = 30V ID = 12 A (VGS = 10V) 1.50 0.15 RDS(ON) 11m (VGS = 10V) 1 8 S D 1 Source 5 Drain 2 7 S D 6 Drain 2 Source 3 6 7 Drain S D 3 Source 8 Drain 4 Gate 4 5 G D Top View Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 30 V

SMD Type MOSFET N-Channel MOSFET IRF7476 (KRF7476) SOP-8 Features VDS (V) = 12V ID = 15 A (VGS = 10V) 1.50 0.15 RDS(ON) 8m (VGS = 4.5V) RDS(ON) 30m (VGS = 2.8V) 1 Source 5 Drain 6 Drain 2 Source 7 Drain 3 Source 8 Drain 4 Gate 1 8 S D 2 7 S D 3 6 S D 4 5 G D Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain

IRF7468TR www.VBsemi.tw N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.012 at VGS = 10 V TrenchFET Power MOSFET 12 40 15 nC 100 % Rg Tested 0.012 at VGS = 4.5 V 9 100 % UIS Tested Compliant to RoHS directive 2002/95/EC APPLICATIONS Synchronous Rectifi

IRF7475TRP www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.008 at VGS = 10 V 13 30 6.1 nC Optimized for High-Side Synchronous 0.011 at VGS = 4.5 V 11 Rectifier Operation 100 % Rg Tested 100 % UIS Tested APPLICATIONS Notebook CPU Core - High-Side Switch

IRF7455TR www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.008 at VGS = 10 V 13 30 6.1 nC Optimized for High-Side Synchronous 0.011 at VGS = 4.5 V 11 Rectifier Operation 100 % Rg Tested 100 % UIS Tested APPLICATIONS Notebook CPU Core - High-Side Switch

IRF7416TRPBF www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.018 at VGS = - 10 V - 9.0 TrenchFET Power MOSFET - 30 13 nC 100 % Rg Tested 0.024 at VGS = - 4.5 V - 7.8 APPLICATIONS Load Switch Battery Switch S SO-8 S 1 8 D G S D 2 7 S 3 6

IRF7413TRPBF www.VBsemi.tw N-Channel 20V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.012 at VGS = 10 V 12 20 6.1 nC Optimized for High-Side Synchronous 0.015 at VGS = 4.5 V 11 Rectifier Operation 100 % Rg Tested 100 % UIS Tested APPLICATIONS Notebook CPU Core - High-Side Switch

IRF7470TRPBF&-10 www.VBsemi.tw N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.012 at VGS = 10 V TrenchFET Power MOSFET 12 40 15 nC 100 % Rg Tested 0.012 at VGS = 4.5 V 9 100 % UIS Tested Compliant to RoHS directive 2002/95/EC APPLICATIONS Synchronous

IRF7463TR www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.008 at VGS = 10 V 13 30 6.1 nC Optimized for High-Side Synchronous 0.011 at VGS = 4.5 V 11 Rectifier Operation 100 % Rg Tested 100 % UIS Tested APPLICATIONS Notebook CPU Core - High-Side Switch

IRF7473TR www.VBsemi.tw N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.040 at VGS = 10 V 6.4 Extremely Low Qgd for Switching Losses 100 23 nC 0.047 at VGS = 8 V 5.5 100 % Rg Tested 100 % Avalanche Tested Compliant to RoHS Directive 2002/95/EC D APPLICATIONS SO

IRF7404TR www.VBsemi.tw P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition a 0.015 at VGS = - 4.5 V TrenchFET Power MOSFET - 13 a 100 % Rg Tested 0.026 at VGS = - 2.5 V - 20 20 nC - 10 Built in ESD Protection with Zener Diode 0.065 at VGS = - 1.8 V - 8 Typical

IRF7478TR www.VBsemi.tw N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition TrenchFET Power MOSFET 0.025 at VGS = 10 V 7.6 60 10.5 nC Optimized for Low Side Synchronous 0.030 at VGS = 4.5 V 6.5 Rectifier Operation 100 % Rg and UIS Tested APPLICATIONS D CCFL

IRF7469TR www.VBsemi.tw N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.012 at VGS = 10 V TrenchFET Power MOSFET 12 40 15 nC 100 % Rg Tested 0.012 at VGS = 4.5 V 9 100 % UIS Tested Compliant to RoHS directive 2002/95/EC APPLICATIONS Synchronous Rectifi

IRF7425TR www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) TrenchFET Power MOSFET 0.011 at VGS = - 10 V - 13.5 100 % Rg Tested RoHS - 30 29.5 nC COMPLIANT 100 % UIS Tested 0.015 at VGS = - 4.5 V - 11.6 APPLICATIONS Load Switch Notebook Adaptor Switch SO-8 S S 1 8 D S D 2 7 G

IRF7424TRPBF www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Available 0.0125 at VGS = - 10 V - 11.6 TrenchFET Power MOSFET - 30 22 nC 100 % Rg Tested 0.0180 at VGS = - 4.5 V - 10 100 % UIS Tested APPLICATIONS Load Switches S - Notebook PCs SO-8 - Desktop

IRF7471TR www.VBsemi.tw N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.012 at VGS = 10 V TrenchFET Power MOSFET 12 40 15 nC 100 % Rg Tested 0.012 at VGS = 4.5 V 9 100 % UIS Tested Compliant to RoHS directive 2002/95/EC APPLICATIONS Synchronous Rectifi

IRF7467TR www.VBsemi.tw N-Channel 20V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.012 at VGS = 10 V 12 20 6.1 nC Optimized for High-Side Synchronous 0.015 at VGS = 4.5 V 11 Rectifier Operation 100 % Rg Tested 100 % UIS Tested APPLICATIONS Notebook CPU Core - High-Side Switch S

IRF7410TR www.VBsemi.tw P-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.0050 at VGS = - 4.5 V - 16 TrenchFET Power MOSFET 0.0065 at VGS = - 2.5 V - 12 - 15 Compliant to RoHS Directive 2002/95/EC 0.0100 at VGS = - 1.8 V - 13 APPLICATIONS Load Switch Battery Switch S

Silicon N-Channel Power MOSFET Description The IRF740 uses advanced technology and design to provide excellent RDS(ON). It can be used in a wide variety of applications. General Features VDS=400V,ID=10A Low ON Resistance Low Reverse transfer capacitances 100% Single Pulse avalanche energy Test Application Power switching application Adapter and charger Electrical C

isc N-Channel Mosfet Transistor IRF740A FEATURES Drain Source Voltage- V = 400V(Min) DSS Static Drain-Source On-Resistance R = 0.55 (Max) DS(on) Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switch mode power supply Uninterruptable power supply High speed power switching ABSOLUTE MAXIMUM

isc N-Channel MOSFET Transistor IRF740FI DESCRIPTION Drain Current I = 5.5A@ T =25 D C Drain Source Voltage- V = 400V(Min) DSS Static Drain-Source On-Resistance R = 0.55 (Max) DS(on) Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed especially for high voltag

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF7473TRPBF FEATURES With SOP-8 packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB

isc N-Channel MOSFET Transistor IRF740 FEATURES Drain Source Voltage- V = 400V(Min) DSS Static Drain-Source On-Resistance R = 0.55 (Max) DS(on) Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switch mode power supply Uninterruptable power supply High speed power switching ABSOLUTE MAXIMUM