SIHF540 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: SIHF540
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 150 W
Предельно допустимое напряжение сток-исток |Uds|: 100 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 4 V
Максимально допустимый постоянный ток стока |Id|: 28 A
Максимальная температура канала (Tj): 175 °C
Общий заряд затвора (Qg): 72 nC
Время нарастания (tr): 44 ns
Выходная емкость (Cd): 560 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.077 Ohm
Тип корпуса: TO-220AB
SIHF540 Datasheet (PDF)
sihf540.pdf
IRF540, SiHF540Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 100Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.077RoHS* 175 C Operating TemperatureQg (Max.) (nC) 72COMPLIANT Fast SwitchingQgs (nC) 11 Ease of ParallelingQgd (nC) 32 Simple Drive RequirementsConfiguration Single Complian
irf540 sihf540.pdf
IRF540, SiHF540Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 100Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.077RoHS* 175 C Operating TemperatureQg (Max.) (nC) 72COMPLIANT Fast SwitchingQgs (nC) 11 Ease of ParallelingQgd (nC) 32 Simple Drive RequirementsConfiguration Single Complian
sihf540s.pdf
IRF540S, SiHF540SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 100 Definition Surface MountRDS(on) ()VGS = 10 V 0.077 Available in Tape and Reel Qg (Max.) (nC) 72 Dynamic dV/dt RatingQgs (nC) 11 Repetitive Avalanche RatedQgd (nC) 32 175 C Operating TemperatureConfiguration Single Fa
irf510pbf sihf510.pdf
IRF510, SiHF510Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 100Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.54RoHS* 175 C Operating TemperatureCOMPLIANTQg (Max.) (nC) 8.3 Fast SwitchingQgs (nC) 2.3 Ease of ParallelingQgd (nC) 3.8 Simple Drive RequirementsConfiguration Single Compli
irf510strlpbf irf510strrpbf sihf510s.pdf
IRF510S, SiHF510SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 100 Surface MountRDS(on) ()VGS = 10 V 0.54 Available in Tape and Reel Qg (Max.) (nC) 8.3 Dynamic dV/dt Rating Repetitive Avalanche RatedQgs (nC) 2.3 175 C Operating TemperatureQgd (nC) 3.8 Fast Switching Ea
sihf530s.pdf
IRF530S, SiHF530SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 100 Surface MountRDS(on) ()VGS = 10 V 0.16 Available in Tape and Reel Qg (Max.) (nC) 26 Dynamic dV/dt RatingQgs (nC) 5.5 Repetitive Avalanche Rated 175 C Operating TemperatureQgd (nC) 11 Fast SwitchingConfigu
sihf520.pdf
IRF520, SiHF520Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 100Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.27RoHS* 175 C Operating TemperatureQg (Max.) (nC) 16COMPLIANT Fast SwitchingQgs (nC) 4.4 Ease of ParallelingQgd (nC) 7.7 Simple Drive RequirementsConfiguration Single Complia
irf510s sihf510s.pdf
IRF510S, SiHF510Swww.vishay.comVishay SiliconixPower MOSFETFEATURESD Surface-mount Available in tape and reel D2PAK (TO-263) Dynamic dv/dt ratingAvailable Repetitive avalanche ratedG 175 C operating temperatureAvailable Fast switching Ease of parallelingDG Material categorization: for definitions of complianceSSplease see www.
sihf530.pdf
IRF530, SiHF530Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 100Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.16RoHS* 175 C Operating TemperatureQg (Max.) (nC) 26COMPLIANT Fast SwitchingQgs (nC) 5.5 Ease of ParallelingQgd (nC) 11 Simple Drive RequirementsConfiguration Single Complian
sihf5n50d.pdf
SiHF5N50Dwww.vishay.comVishay SiliconixD Series Power MOSFETFEATURESPRODUCT SUMMARY Optimal DesignVDS (V) at TJ max. 550- Low Area Specific On-ResistanceRDS(on) max. at 25 C () VGS = 10 V 1.5- Low Input Capacitance (Ciss)Qg (max.) (nC) 20- Reduced Capacitive Switching LossesQgs (nC) 3- High Body Diode RuggednessQgd (nC) 5- Avalanche Energy Rated (UIS)Co
irf530s sihf530s.pdf
IRF530S, SiHF530SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 100 Surface MountRDS(on) ()VGS = 10 V 0.16 Available in Tape and Reel Qg (Max.) (nC) 26 Dynamic dV/dt RatingQgs (nC) 5.5 Repetitive Avalanche Rated 175 C Operating TemperatureQgd (nC) 11 Fast SwitchingConfigu
irf530 sihf530.pdf
IRF530, SiHF530Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 100Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.16RoHS* 175 C Operating TemperatureQg (Max.) (nC) 26COMPLIANT Fast SwitchingQgs (nC) 5.5 Ease of ParallelingQgd (nC) 11 Simple Drive RequirementsConfiguration Single Complian
irf520 sihf520.pdf
IRF520, SiHF520Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 100Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.27RoHS* 175 C Operating TemperatureQg (Max.) (nC) 16COMPLIANT Fast SwitchingQgs (nC) 4.4 Ease of ParallelingQgd (nC) 7.7 Simple Drive RequirementsConfiguration Single Complia
sihf520s.pdf
IRF520S, SiHF520SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 100 Surface MountRDS(on) ()VGS = 10 V 0.27 Available in Tape and Reel Qg (Max.) (nC) 16 Dynamic dV/dt Rating Repetitive Avalanche RatedQgs (nC) 4.4 175 C Operating TemperatureQgd (nC) 7.7 Fast Switching Eas
irf510 sihf510.pdf
IRF510, SiHF510www.vishay.comVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt ratingVDS (V) 100Available Repetitive avalanche ratedRDS(on) ()VGS = 10 V 0.54 175 C operating temperatureAvailableQg max. (nC) 8.3 Fast switchingQgs (nC) 2.3 Ease of parallelingQgd (nC) 3.8 Simple drive requirementsConfiguration Single
irf520 sihf520.pdf
IRF520, SiHF520Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 100Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.27RoHS* 175 C Operating TemperatureQg (Max.) (nC) 16COMPLIANT Fast SwitchingQgs (nC) 4.4 Ease of ParallelingQgd (nC) 7.7 Simple Drive RequirementsConfiguration Single Complia
irf510 sihf510.pdf
IRF510, SiHF510Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 100Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.54RoHS* 175 C Operating TemperatureCOMPLIANTQg (Max.) (nC) 8.3 Fast SwitchingQgs (nC) 2.3 Ease of ParallelingQgd (nC) 3.8 Simple Drive RequirementsConfiguration Single Compli
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