SIHF820S
MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: SIHF820S
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 50
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20
V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4
V
|Id|ⓘ - Максимально
допустимый постоянный ток стока: 2.5
A
Tjⓘ - Максимальная температура канала: 150
°C
Qgⓘ -
Общий заряд затвора: 24
nC
trⓘ -
Время нарастания: 8.6
ns
Cossⓘ - Выходная емкость: 92
pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 3
Ohm
Тип корпуса:
TO-263
Аналог (замена) для SIHF820S
SIHF820S
Datasheet (PDF)
..1. Size:200K vishay
irf820spbf sihf820s.pdf 
IRF820S, SiHF820SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 500 Surface MountRDS(on) ()VGS = 10 V 3.0 Available in Tape and Reel Qg (Max.) (nC) 24 Dynamic dV/dt Rating Repetitive Avalanche RatedQgs (nC) 3.3 Fast SwitchingQgd (nC) 13 Ease of Paralleling Simple Drive Re
7.1. Size:200K vishay
irf820 sihf820.pdf 
IRF820, SiHF820Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 500Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 3.0RoHS* Fast SwitchingQg (Max.) (nC) 24COMPLIANT Ease of ParallelingQgs (nC) 3.3Qgd (nC) 13 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECDESCR
7.2. Size:205K vishay
sihf820a.pdf 
IRF820A, SiHF820AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 500RequirementAvailableRDS(on) ()VGS = 10 V 3.0 Improved Gate, Avalanche and Dynamic dV/dtRoHS*COMPLIANTQg (Max.) (nC) 17 RuggednessQgs (nC) 4.3 Fully Characterized Capacitance and Avalanche Voltageand currentQgd (nC) 8.5 Effecti
7.3. Size:174K vishay
irf820l irf820lpbf sihf820l.pdf 
IRF820S, SiHF820S, IRF820L, SiHF820Lwww.vishay.comVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Surface mountVDS (V) 500 Available in tape and reel RDS(on) ()VGS = 10 V 3.0Available Dynamic dV/dt ratingQg (Max.) (nC) 24 Repetitive avalanche ratedQgs (nC) 3.3Available Fast switchingQgd (nC) 13 Ease of parallelingConfiguration Singl
7.4. Size:204K vishay
irf820aspbf sihf820al sihf820as.pdf 
IRF820AS, SiHF820AS, IRF820AL, SiHF820ALVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 500DefinitionRDS(on) (Max.) ()VGS = 10 V 3.0 Low Gate Charge Qg Results in Simple DriveRequirementQg (Max.) (nC) 17 Improved Gate, Avalanche and Dynamic dV/dtQgs (nC) 4.3RuggednessQgd (nC) 8.5 Fully Characterize
7.5. Size:204K vishay
irf820a sihf820a.pdf 
IRF820A, SiHF820AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 500RequirementAvailableRDS(on) ()VGS = 10 V 3.0 Improved Gate, Avalanche and Dynamic dV/dtRoHS*COMPLIANTQg (Max.) (nC) 17 RuggednessQgs (nC) 4.3 Fully Characterized Capacitance and Avalanche Voltageand currentQgd (nC) 8.5 Effecti
7.6. Size:201K vishay
irf820pbf sihf820.pdf 
IRF820, SiHF820Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 500Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 3.0RoHS* Fast SwitchingQg (Max.) (nC) 24COMPLIANT Ease of ParallelingQgs (nC) 3.3Qgd (nC) 13 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECDESCR
7.7. Size:151K infineon
irf820 sihf820.pdf 
IRF820, SiHF820Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 500Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 3.0RoHS* Fast SwitchingQg (Max.) (nC) 24COMPLIANT Ease of ParallelingQgs (nC) 3.3Qgd (nC) 13 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECDESCR
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