Справочник MOSFET. SIHF830A

 

SIHF830A MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: SIHF830A
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 74 W
   Предельно допустимое напряжение сток-исток |Uds|: 500 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
   Пороговое напряжение включения |Ugs(th)|: 4.5 V
   Максимально допустимый постоянный ток стока |Id|: 5 A
   Максимальная температура канала (Tj): 150 °C
   Общий заряд затвора (Qg): 24 nC
   Время нарастания (tr): 21 ns
   Выходная емкость (Cd): 93 pf
   Сопротивление сток-исток открытого транзистора (Rds): 1.4 Ohm
   Тип корпуса: TO-220AB

 Аналог (замена) для SIHF830A

 

 

SIHF830A Datasheet (PDF)

 ..1. Size:1091K  vishay
 irf830a sihf830a.pdf

SIHF830A SIHF830A

IRF830A, SiHF830AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 500AvailableRequirementRDS(on) ()VGS = 10 V 1.4RoHS* Improved Gate, Avalanche and Dynamic dV/dtQg (Max.) (nC) 24 COMPLIANTRuggednessQgs (nC) 6.3 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 11and CurrentConfigurati

 ..2. Size:1093K  vishay
 irf830apbf sihf830a.pdf

SIHF830A SIHF830A

IRF830A, SiHF830AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 500AvailableRequirementRDS(on) ()VGS = 10 V 1.4RoHS* Improved Gate, Avalanche and Dynamic dV/dtQg (Max.) (nC) 24 COMPLIANTRuggednessQgs (nC) 6.3 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 11and CurrentConfigurati

 0.1. Size:207K  vishay
 irf830alpbf irf830aspbf sihf830al sihf830as.pdf

SIHF830A SIHF830A

IRF830AS, IRF830AL, SiHF830AS, SiHF830ALVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 500DefinitionRDS(on) (Max.) ()VGS = 10 V 1.40 Low Gate Charge Qg Results in Simple DriveQg (Max.) (nC) 24RequirementQgs (nC) 6.3 Improved Gate, Avalanche and Dynamic dV/dtQgd (nC) 11 Ruggedness Fully Characterize

 7.1. Size:174K  vishay
 irf830lpbf irf830spbf sihf830l.pdf

SIHF830A SIHF830A

IRF830S, SiHF830S, IRF830L, SiHF830Lwww.vishay.comVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Surface mountVDS (V) 500 Available in tape and reel RDS(on) ()VGS = 10 V 1.5 Dynamic dV/dt ratingAvailableQg (Max.) (nC) 38 Repetitive avalanche ratedQgs (nC) 5.0 Fast switchingAvailableQgd (nC) 22 Ease of parallelingConfiguration Single

 7.2. Size:202K  vishay
 sihf830.pdf

SIHF830A SIHF830A

IRF830, SiHF830Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 500Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 1.5RoHS* Fast SwitchingQg (Max.) (nC) 38COMPLIANT Ease of ParallelingQgs (nC) 5.0Qgd (nC) 22 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECDDE

 7.3. Size:234K  vishay
 irf830s sihf830s irf830l sihf830l.pdf

SIHF830A SIHF830A

IRF830S, SiHF830S, IRF830L, SiHF830Lwww.vishay.comVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Surface mountVDS (V) 500 Available in tape and reel RDS(on) ()VGS = 10 V 1.5 Dynamic dV/dt ratingAvailableQg max. (nC) 38 Repetitive avalanche ratedQgs (nC) 5.0 Fast switchingAvailableQgd (nC) 22 Ease of parallelingConfiguration Single

 7.4. Size:200K  vishay
 sihf830s.pdf

SIHF830A SIHF830A

IRF830S, SiHF830SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 500 Surface MountRDS(on) ()VGS = 10 V 1.5 Available in Tape and Reel Qg (Max.) (nC) 38 Dynamic dV/dt Rating Repetitive Avalanche RatedQgs (nC) 5.0 Fast SwitchingQgd (nC) 22 Ease of Paralleling Simple Drive R

 7.5. Size:201K  vishay
 irf830 sihf830.pdf

SIHF830A SIHF830A

IRF830, SiHF830Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 500Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 1.5RoHS* Fast SwitchingQg (Max.) (nC) 38COMPLIANT Ease of ParallelingQgs (nC) 5.0Qgd (nC) 22 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECDDE

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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