IRL530 - описание и поиск аналогов

PD - 95452 IRL530PbF Lead-Free 6/23/04 Document Number 91299 www.vishay.com 1 IRL530PbF Document Number 91299 www.vishay.com 2 IRL530PbF Document Number 91299 www.vishay.com 3 IRL530PbF Document Number 91299 www.vishay.com 4 IRL530PbF Document Number 91299 www.vishay.com 5 IRL530PbF Document Number 91299 www.vishay.com 6 IRL530PbF + Circuit Layout Consider

IRL530, SiHL530 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 100 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 5.0 V 0.16 RoHS* Logic-Level Gate Drive Qg (Max.) (nC) 28 COMPLIANT RDS(on) Specified at VGS = 4 V and 5 V Qgs (nC) 3.8 175 C Operating Temperature Qgd (nC) 14 Fast Switching Configuration Singl

IRL530, SiHL530 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 100 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 5.0 V 0.16 RoHS* Logic-Level Gate Drive Qg (Max.) (nC) 28 COMPLIANT RDS(on) Specified at VGS = 4 V and 5 V Qgs (nC) 3.8 175 C Operating Temperature Qgd (nC) 14 Fast Switching Configuration Singl

PD - 91348B IRL530N HEXFET Power MOSFET Logic-Level Gate Drive D Advanced Process Technology VDSS = 100V Dynamic dv/dt Rating 175 C Operating Temperature RDS(on) = 0.10 Fast Switching G Fully Avalanche Rated ID = 17A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per

PD - 91349B IRL530NS/L HEXFET Power MOSFET Advanced Process Technology D VDSS =100V Surface Mount (IRL530NS) Low-profile through-hole (IRL530NL) 175 C Operating Temperature RDS(on) = 0.10 G Fast Switching Fully Avalanche Rated ID = 17A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low

PD- 95593 IRL530NSPbF IRL530NLPbF Lead-Free www.irf.com 1 07/21/04 IRL530NS/LPbF 2 www.irf.com IRL530NS/LPbF www.irf.com 3 IRL530NS/LPbF 4 www.irf.com IRL530NS/LPbF www.irf.com 5 IRL530NS/LPbF 6 www.irf.com IRL530NS/LPbF Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance

PD - 95451 IRL530NPbF Lead-Free www.irf.com 1 6/23/04 IRL530NPbF 2 www.irf.com IRL530NPbF www.irf.com 3 IRL530NPbF 4 www.irf.com IRL530NPbF www.irf.com 5 IRL530NPbF 6 www.irf.com IRL530NPbF www.irf.com 7 IRL530NPbF TO-220AB Package Outline Dimensions are shown in millimeters (inches) 10.54 (.415) - B - 3.78 (.149) 10.29 (.405) 2.87 (.113) 4.69 (.185) 3.54 (.13

Advanced Power MOSFET FEATURES BVDSS = 100 V Logic Level Gate Drive RDS(on) = 0.12 Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 10.7 A Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 100V Lower RDS(ON) 0.101 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings

IRL530S, SiHL530S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) 100 Surface Mount RDS(on) ( )VGS = 5.0 V 0.16 Available in Tape and Reel Qg (Max.) (nC) 28 Dynamic dV/dt Rating Repetitive Avalanche Rated Qgs (nC) 3.8 Logic Level Gate Drive Qgd (nC) 14 RDS(on) Specified at VGS = 4 V

IRL530S, SiHL530S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) 100 Surface Mount RDS(on) ( )VGS = 5.0 V 0.16 Available in Tape and Reel Qg (Max.) (nC) 28 Dynamic dV/dt Rating Repetitive Avalanche Rated Qgs (nC) 3.8 Logic Level Gate Drive Qgd (nC) 14 RDS(on) Specified at VGS = 4 V

isc N-Channel MOSFET Transistor IRL530N IIRL530N FEATURES Static drain-source on-resistance RDS(on) 0.1 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB

Isc N-Channel MOSFET Transistor IRL530NS FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volt

Isc N-Channel MOSFET Transistor IRL530NL FEATURES With To-262 package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 100