SIHF9520 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: SIHF9520
Тип транзистора: MOSFET
Полярность: P
Pdⓘ - Максимальная рассеиваемая мощность: 60 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 6.8 A
Tjⓘ - Максимальная температура канала: 175 °C
Qgⓘ - Общий заряд затвора: 18 nC
trⓘ - Время нарастания: 29 ns
Cossⓘ - Выходная емкость: 170 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.6 Ohm
Тип корпуса: TO-220AB
SIHF9520 Datasheet (PDF)
irf9520 sihf9520.pdf
IRF9520, SiHF9520Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 100Available Repetitive Avalanche RatedRDS(on) ()VGS = - 10 V 0.60 P-Channel RoHS*Qg (Max.) (nC) 18COMPLIANT 175 C Operating TemperatureQgs (nC) 3.0 Fast SwitchingQgd (nC) 9.0 Ease of ParallelingConfiguration Single Simple Drive Requi
sihf9520.pdf
IRF9520, SiHF9520Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 100Available Repetitive Avalanche RatedRDS(on) ()VGS = - 10 V 0.60 P-Channel RoHS*Qg (Max.) (nC) 18COMPLIANT 175 C Operating TemperatureQgs (nC) 3.0 Fast SwitchingQgd (nC) 9.0 Ease of ParallelingConfiguration Single Simple Drive Requi
irf9520s sihf9520s.pdf
IRF9520S, SiHF9520SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) - 100 Surface MountRDS(on) ()VGS = - 10 V 0.60 Available in Tape and Reel Qg (Max.) (nC) 18 Dynamic dV/dt Rating Repetitive Avalanche RatedQgs (nC) 3.0 P-ChannelQgd (nC) 9.0 175 C Operating Temperature Fa
irf9520s irf9520spbf sihf9520s.pdf
IRF9520S, SiHF9520SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) - 100 Surface MountRDS(on) ()VGS = - 10 V 0.60 Available in Tape and Reel Qg (Max.) (nC) 18 Dynamic dV/dt Rating Repetitive Avalanche RatedQgs (nC) 3.0 P-ChannelQgd (nC) 9.0 175 C Operating Temperature Fa
irf9510 sihf9510.pdf
IRF9510, SiHF9510Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 100Available Repetitive Avalanche RatedRDS(on) ()VGS = - 10 V 1.2RoHS* P-ChannelCOMPLIANTQg (Max.) (nC) 8.7 175 C Operating TemperatureQgs (nC) 2.2 Fast SwitchingQgd (nC) 4.1 Ease of ParallelingConfiguration Single Simple Drive Requi
irf9510spbf sihf9510s.pdf
IRF9510S, SiHF9510SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) - 100 Surface MountRDS(on) ()VGS = - 10 V 1.2 Available in Tape and Reel Qg (Max.) (nC) 8.7 Dynamic dV/dt RatingQgs (nC) 2.2 Repetitive Avalanche Rated P-ChannelQgd (nC) 4.1 175 C Operating TemperatureConfi
irf9530s sihf9530s.pdf
IRF9530S, SiHF9530SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) - 100 Surface MountRDS(on) ()VGS = - 10 V 0.30 Available in Tape and Reel Qg (Max.) (nC) 38 Dynamic dV/dt RatingQgs (nC) 6.8 Repetitive Avalanche Rated P-ChannelQgd (nC) 21 175 C Operating TemperatureConfig
irf9540s irf9540spbf sihf9540s.pdf
IRF9540S, SiHF9540SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) - 100 Surface Mount RDS(on) ()VGS = - 10 V 0.20 Available in Tape and ReelQg (Max.) (nC) 61 Dynamic dV/dt Rating Repetitive Avalanche RatedQgs (nC) 14 P-ChannelQgd (nC) 29 175 C Operating Temperature Fast
irf9540s sihf9540s.pdf
IRF9540S, SiHF9540SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) - 100 Surface Mount RDS(on) ()VGS = - 10 V 0.20 Available in Tape and ReelQg (Max.) (nC) 61 Dynamic dV/dt Rating Repetitive Avalanche RatedQgs (nC) 14 P-ChannelQgd (nC) 29 175 C Operating Temperature Fast
sihf9510.pdf
IRF9510, SiHF9510Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 100Available Repetitive Avalanche RatedRDS(on) ()VGS = - 10 V 1.2RoHS* P-ChannelCOMPLIANTQg (Max.) (nC) 8.7 175 C Operating TemperatureQgs (nC) 2.2 Fast SwitchingQgd (nC) 4.1 Ease of ParallelingConfiguration Single Simple Drive Requi
irf9510s sihf9510s.pdf
IRF9510S, SiHF9510SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) - 100 Surface MountRDS(on) ()VGS = - 10 V 1.2 Available in Tape and Reel Qg (Max.) (nC) 8.7 Dynamic dV/dt RatingQgs (nC) 2.2 Repetitive Avalanche Rated P-ChannelQgd (nC) 4.1 175 C Operating TemperatureConfi
irf9530spbf sihf9530s.pdf
IRF9530S, SiHF9530SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) - 100 Surface MountRDS(on) ()VGS = - 10 V 0.30 Available in Tape and Reel Qg (Max.) (nC) 38 Dynamic dV/dt RatingQgs (nC) 6.8 Repetitive Avalanche Rated P-ChannelQgd (nC) 21 175 C Operating TemperatureConfig
irf9530 sihf9530.pdf
IRF9530, SiHF9530Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 100Available Repetitive Avalanche RatedRDS(on) ()VGS = - 10 V 0.30 P-Channel RoHS*Qg (Max.) (nC) 38COMPLIANT 175 C Operating TemperatureQgs (nC) 6.8 Fast SwitchingQgd (nC) 21 Ease of ParallelingConfiguration Single Simple Drive Requir
irf9530pbf sihf9530.pdf
IRF9530, SiHF9530Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 100Available Repetitive Avalanche RatedRDS(on) ()VGS = - 10 V 0.30 P-Channel RoHS*Qg (Max.) (nC) 38COMPLIANT 175 C Operating TemperatureQgs (nC) 6.8 Fast SwitchingQgd (nC) 21 Ease of ParallelingConfiguration Single Simple Drive Requir
irf9540 sihf9540.pdf
IRF9540, SiHF9540Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 100Available Repetitive Avalanche RatedRDS(on) ()VGS = - 10 V 0.20RoHS* P-ChannelCOMPLIANTQg (Max.) (nC) 61 175 C Operating TemperatureQgs (nC) 14 Fast SwitchingQgd (nC) 29 Ease of ParallelingConfiguration Single Simple Drive Requir
irf9540pbf sihf9540.pdf
IRF9540, SiHF9540Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 100Available Repetitive Avalanche RatedRDS(on) ()VGS = - 10 V 0.20RoHS* P-ChannelCOMPLIANTQg (Max.) (nC) 61 175 C Operating TemperatureQgs (nC) 14 Fast SwitchingQgd (nC) 29 Ease of ParallelingConfiguration Single Simple Drive Requir
irf9510 sihf9510.pdf
IRF9510, SiHF9510Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 100Available Repetitive Avalanche RatedRDS(on) ()VGS = - 10 V 1.2RoHS* P-ChannelCOMPLIANTQg (Max.) (nC) 8.7 175 C Operating TemperatureQgs (nC) 2.2 Fast SwitchingQgd (nC) 4.1 Ease of ParallelingConfiguration Single Simple Drive Requi
Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: NTD5802N
History: NTD5802N
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918