Справочник MOSFET. SIHFBC30AL

 

SIHFBC30AL MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: SIHFBC30AL
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 74 W
   Предельно допустимое напряжение сток-исток |Uds|: 600 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
   Максимально допустимый постоянный ток стока |Id|: 3.6 A
   Максимальная температура канала (Tj): 150 °C
   Время нарастания (tr): 13 ns
   Выходная емкость (Cd): 70 pf
   Сопротивление сток-исток открытого транзистора (Rds): 2.2 Ohm
   Тип корпуса: TO-262

 Аналог (замена) для SIHFBC30AL

 

 

SIHFBC30AL Datasheet (PDF)

 ..1. Size:261K  vishay
irfbc30as sihfbc30as irfbc30al sihfbc30al.pdf

SIHFBC30AL
SIHFBC30AL

IRFBC30AS, SiHFBC30AS, IRFBC30AL, SiHFBC30ALVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 600DefinitionRDS(on) ()VGS = 10 V 2.2 Low Gate Charge Qg Results in Simple DriveQg (Max.) (nC) 23RequirementQgs (nC) 5.4 Improved Gate, Avalanche and Dynamic dV/dtQgd (nC) 11 Ruggedness Fully Characterized Ca

 ..2. Size:285K  vishay
sihfbc30al sihfbc30as.pdf

SIHFBC30AL
SIHFBC30AL

IRFBC30AS, SiHFBC30AS, IRFBC30AL, SiHFBC30ALVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 600DefinitionRDS(on) ()VGS = 10 V 2.2 Low Gate Charge Qg Results in Simple DriveQg (Max.) (nC) 23RequirementQgs (nC) 5.4 Improved Gate, Avalanche and Dynamic dV/dtQgd (nC) 11 Ruggedness Fully Characterized Ca

 5.1. Size:216K  vishay
irfbc30apbf sihfbc30a.pdf

SIHFBC30AL
SIHFBC30AL

IRFBC30A, SiHFBC30AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 600AvailableRequirementRDS(on) ()VGS = 10 V 2.2RoHS* Improved Gate, Avalanche and Dynamic dV/dtQg (Max.) (nC) 23COMPLIANTRuggednessQgs (nC) 5.4 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 11and CurrentConfigur

 5.2. Size:215K  vishay
irfbc30a sihfbc30a.pdf

SIHFBC30AL
SIHFBC30AL

IRFBC30A, SiHFBC30AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 600AvailableRequirementRDS(on) ()VGS = 10 V 2.2RoHS* Improved Gate, Avalanche and Dynamic dV/dtQg (Max.) (nC) 23COMPLIANTRuggednessQgs (nC) 5.4 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 11and CurrentConfigur

 6.1. Size:1805K  vishay
irfbc30 sihfbc30.pdf

SIHFBC30AL
SIHFBC30AL

IRFBC30, SiHFBC30Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 600 Repetitive Avalanche Rated AvailableRDS(on) ()VGS = 10 V 2.2 Fast SwitchingRoHS*Qg (Max.) (nC) 31COMPLIANT Ease of ParallelingQgs (nC) 4.6 Simple Drive RequirementsQgd (nC) 17 Compliant to RoHS Directive 2002/95/ECConfiguration SingleD DE

 6.2. Size:290K  vishay
sihfbc30l sihfbc30s.pdf

SIHFBC30AL
SIHFBC30AL

IRFBC30S, SiHFBC30S, IRFBC30L, SiHFBC30LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 600 Surface Mount (IRFBC30S, SiHFBC30S)RDS(on) ()VGS = 10 V 2.2 Low-Profile Through-Hole (IRFBC30L, SiHFBC30L)Qg (Max.) (nC) 31 Available in Tape and Reel (IRFBC30S, SiHFBC30S) Dynamic dV/dt RatingQgs

 6.3. Size:1808K  vishay
irfbc30pbf sihfbc30.pdf

SIHFBC30AL
SIHFBC30AL

IRFBC30, SiHFBC30Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 600 Repetitive Avalanche Rated AvailableRDS(on) ()VGS = 10 V 2.2 Fast SwitchingRoHS*Qg (Max.) (nC) 31COMPLIANT Ease of ParallelingQgs (nC) 4.6 Simple Drive RequirementsQgd (nC) 17 Compliant to RoHS Directive 2002/95/ECConfiguration SingleD DE

 6.4. Size:264K  vishay
irfbc30s sihfbc30s irfbc30l sihfbc30l.pdf

SIHFBC30AL
SIHFBC30AL

IRFBC30S, SiHFBC30S, IRFBC30L, SiHFBC30LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 600 Surface Mount (IRFBC30S, SiHFBC30S)RDS(on) ()VGS = 10 V 2.2 Low-Profile Through-Hole (IRFBC30L, SiHFBC30L)Qg (Max.) (nC) 31 Available in Tape and Reel (IRFBC30S, SiHFBC30S) Dynamic dV/dt RatingQgs

 6.5. Size:1757K  infineon
irfbc30 sihfbc30.pdf

SIHFBC30AL
SIHFBC30AL

IRFBC30, SiHFBC30Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 600 Repetitive Avalanche Rated AvailableRDS(on) ()VGS = 10 V 2.2 Fast SwitchingRoHS*Qg (Max.) (nC) 31COMPLIANT Ease of ParallelingQgs (nC) 4.6 Simple Drive RequirementsQgd (nC) 17 Compliant to RoHS Directive 2002/95/ECConfiguration SingleD DE

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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