Справочник MOSFET. SIHFBC40L

 

SIHFBC40L Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: SIHFBC40L
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 130 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 6.2 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 18 ns
   Cossⓘ - Выходная емкость: 160 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 1.2 Ohm
   Тип корпуса: TO-262
 

 Аналог (замена) для SIHFBC40L

   - подбор ⓘ MOSFET транзистора по параметрам

 

SIHFBC40L Datasheet (PDF)

 ..1. Size:264K  vishay
 irfbc40s sihfbc40s irfbc40l sihfbc40l.pdf pdf_icon

SIHFBC40L

IRFBC40S, SiHFBC40S, IRFBC40L, SiHFBC40LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 600 Definition Surface Mount (IRFBC40S, SiHFBC40S)RDS(on) ()VGS = 10 V 1.2 Low-Profile Through-Hole (IRFBC40L, SiHFBC40L)Qg (Max.) (nC) 60 Available in Tape and Reel (IRFBC40S, SiHFBC40S)Qgs (nC) 8.3 Dynamic dV/dt

 ..2. Size:290K  vishay
 irfbc40spbf sihfbc40l sihfbc40s.pdf pdf_icon

SIHFBC40L

IRFBC40S, SiHFBC40S, IRFBC40L, SiHFBC40LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 600 Definition Surface Mount (IRFBC40S, SiHFBC40S)RDS(on) ()VGS = 10 V 1.2 Low-Profile Through-Hole (IRFBC40L, SiHFBC40L)Qg (Max.) (nC) 60 Available in Tape and Reel (IRFBC40S, SiHFBC40S)Qgs (nC) 8.3 Dynamic dV/dt

 0.1. Size:209K  vishay
 irfbc40lc sihfbc40lc.pdf pdf_icon

SIHFBC40L

IRFBC40LC, SiHFBC40LCVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Ultra Low Gate ChargeVDS (V) 600 Reduced Gate Drive RequirementAvailableRDS(on) ()VGS = 10 V 1.2 Enhanced 30 V, VGS RatingRoHS*Qg (Max.) (nC) 39 COMPLIANT Reduced Ciss, Coss, CrssQgs (nC) 10 Extremely High Frequency OperationQgd (nC) 19 Repetitive Avalanche RatedConf

 0.2. Size:210K  vishay
 irfbc40lc irfbc40lcpbf sihfbc40lc.pdf pdf_icon

SIHFBC40L

IRFBC40LC, SiHFBC40LCVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Ultra Low Gate ChargeVDS (V) 600 Reduced Gate Drive RequirementAvailableRDS(on) ()VGS = 10 V 1.2 Enhanced 30 V, VGS RatingRoHS*Qg (Max.) (nC) 39 COMPLIANT Reduced Ciss, Coss, CrssQgs (nC) 10 Extremely High Frequency OperationQgd (nC) 19 Repetitive Avalanche RatedConf

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... SIHFBC30A , SIHFBC30AL , SIHFBC30AS , SIHFBC30L , SIHFBC30S , SIHFBC40 , SIHFBC40A , SIHFBC40AS , 2N7000 , SIHFBC40LC , SIHFBC40S , SIHFBE20 , SIHFBE30 , SIHFBE30L , SIHFBE30S , SIHFBF20 , SIHFBF20L .

History: LNTR4003NLT1G | IXTK120N25P | SWN7N65K2 | SSM6P15FU | STD100N03LT4 | HGP059N08A | STW75N60M6

 

 
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