IRL540 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IRL540
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 150 W
Предельно допустимое напряжение сток-исток |Uds|: 100 V
Предельно допустимое напряжение затвор-исток |Ugs|: 10 V
Пороговое напряжение включения |Ugs(th)|: 2 V
Максимально допустимый постоянный ток стока |Id|: 28 A
Максимальная температура канала (Tj): 175 °C
Общий заряд затвора (Qg): 64(max) nC
Время нарастания (tr): 170 ns
Выходная емкость (Cd): 560 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.077 Ohm
Тип корпуса: TO220
IRL540 Datasheet (PDF)
irl540pbf.pdf
PD - 95453IRL540PbF Lead-Free6/23/04Document Number: 91300 www.vishay.com1IRL540PbFDocument Number: 91300 www.vishay.com2IRL540PbFDocument Number: 91300 www.vishay.com3IRL540PbFDocument Number: 91300 www.vishay.com4IRL540PbFDocument Number: 91300 www.vishay.com5IRL540PbFDocument Number: 91300 www.vishay.com6IRL540PbF+Circuit Layout Consider
irl540 sihl540.pdf
IRL540, SiHL540Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 100Available Repetitive Avalanche Rated RDS(on) ()VGS = 5.0 V 0.077RoHS* Logic-Level Gate DriveCOMPLIANTQg (Max.) (nC) 64 RDS(on) Specified at VGS = 4 V and 5 VQgs (nC) 9.4 175 C Operating TemperatureQgd (nC) 27 Fast SwitchingConfiguration Si
irl540pbf sihl540.pdf
IRL540, SiHL540Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 100Available Repetitive Avalanche Rated RDS(on) ()VGS = 5.0 V 0.077RoHS* Logic-Level Gate DriveCOMPLIANTQg (Max.) (nC) 64 RDS(on) Specified at VGS = 4 V and 5 VQgs (nC) 9.4 175 C Operating TemperatureQgd (nC) 27 Fast SwitchingConfiguration Si
irl540npbf.pdf
PD - 94997IRL540NPbFHEXFET Power MOSFET Lead-Freewww.irf.com 12/10/04IRL540NPbF2 www.irf.comIRL540NPbFwww.irf.com 3IRL540NPbF4 www.irf.comIRL540NPbFwww.irf.com 5IRL540NPbF6 www.irf.comIRL540NPbFwww.irf.com 7IRL540NPbFTO-220AB Package OutlineDimensions are shown in millimeters (inches)10.54 (.415) - B -3.78 (.149)10.29 (.405)2.87 (.113) 4
irl540n.pdf
PD - 91495AIRL540NHEXFET Power MOSFET Logic-Level Gate DriveD Advanced Process TechnologyVDSS = 100V Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 0.044 Fast Switching G Fully Avalanche RatedID = 36ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per
irl540s.pdf
www.vishay.comDocument Number: 903861349Document Number: 90386 www.vishay.com1350Document Number: 90386 www.vishay.com1351Document Number: 90386 www.vishay.com1352Document Number: 90386 www.vishay.com1353Document Number: 90386 www.vishay.com1354Legal Disclaimer NoticeVishayNoticeThe products described herein were acquired by Vishay Intertechnology, Inc., as
irl540ns irl540nl.pdf
PD -91535IRL540NS/LHEXFET Power MOSFET Advanced Process TechnologyD Surface Mount (IRL540NS)VDSS = 100V Low-profile through-hole (IRL540NL) 175C Operating TemperatureRDS(on) = 0.044 Fast SwitchingG Fully Avalanche RatedID = 36ADescriptionSFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low
irl540nspbf.pdf
PD- 95234IRL540NS/LPbF Lead-Freewww.irf.com 105/04/04IRL540NS/LPbF2 www.irf.comIRL540NS/LPbFwww.irf.com 3IRL540NS/LPbF4 www.irf.comIRL540NS/LPbFwww.irf.com 5IRL540NS/LPbF6 www.irf.comIRL540NS/LPbFwww.irf.com 7IRL540NS/LPbFD2Pak Package OutlineDimensions are shown in millimeters (inches)D2Pak Part Marking Information (Lead-Free)T H IS IS AN IR
irl540a.pdf
Advanced Power MOSFETFEATURESBVDSS = 100 V Logic-Level Gate DriveRDS(on) = 0.058 Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 28 A Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 100V Lower RDS(ON) : 0.046 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum Rating
irl540spbf sihl540s.pdf
IRL540S, SiHL540SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 100 Definition Surface MountRDS(on) ()VGS = 5 V 0.077 Available in Tape and Reel Qg (Max.) (nC) 64 Dynamic dV/dt Rating Repetitive Avalanche RatedQgs (nC) 9.4 Logic-Level Gate DriveQgd (nC) 27 RDS(on) Specified at VGS = 4 V
irl540s sihl540s.pdf
IRL540S, SiHL540SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 100 Definition Surface MountRDS(on) ()VGS = 5 V 0.077 Available in Tape and Reel Qg (Max.) (nC) 64 Dynamic dV/dt Rating Repetitive Avalanche RatedQgs (nC) 9.4 Logic-Level Gate DriveQgd (nC) 27 RDS(on) Specified at VGS = 4 V
irl540npbf.pdf
PD - 94997IRL540NPbFHEXFET Power MOSFET Lead-Freewww.irf.com 12/10/04IRL540NPbF2 www.irf.comIRL540NPbFwww.irf.com 3IRL540NPbF4 www.irf.comIRL540NPbFwww.irf.com 5IRL540NPbF6 www.irf.comIRL540NPbFwww.irf.com 7IRL540NPbFTO-220AB Package OutlineDimensions are shown in millimeters (inches)10.54 (.415) - B -3.78 (.149)10.29 (.405)2.87 (.113) 4
irl540nspbf irl540nlpbf.pdf
PD- 95234IRL540NS/LPbF Lead-Freewww.irf.com 105/04/04IRL540NS/LPbF2 www.irf.comIRL540NS/LPbFwww.irf.com 3IRL540NS/LPbF4 www.irf.comIRL540NS/LPbFwww.irf.com 5IRL540NS/LPbF6 www.irf.comIRL540NS/LPbFwww.irf.com 7IRL540NS/LPbFD2Pak Package OutlineDimensions are shown in millimeters (inches)D2Pak Part Marking Information (Lead-Free)T H IS IS AN IR
irl540n.pdf
isc N-Channel MOSFET Transistor IRL540N,IIRL540NFEATURESLow drain-source on-resistance:RDS(on) 44m (max)Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONIt is intended for general purpose switching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSY
irl540ns.pdf
Isc N-Channel MOSFET Transistor IRL540NSFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt
irl540nl.pdf
Isc N-Channel MOSFET Transistor IRL540NLFEATURESWith To-262 packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 100
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