SIHFD9120
Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: SIHFD9120
Тип транзистора: MOSFET
Полярность: P
Pd ⓘ - Максимальная рассеиваемая мощность: 1.3
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20
V
|Id| ⓘ - Максимально
допустимый постоянный ток стока: 1
A
Tj ⓘ - Максимальная температура канала: 175
°C
tr ⓘ -
Время нарастания: 29
ns
Cossⓘ - Выходная емкость: 170
pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.6
Ohm
Тип корпуса: HVMDIP
Аналог (замена) для SIHFD9120
-
подбор ⓘ MOSFET транзистора по параметрам
SIHFD9120
Datasheet (PDF)
..1. Size:2027K vishay
irfd9120 sihfd9120.pdf 
IRFD9120, SiHFD9120Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 100Available Repetitive Avalanche RatedRDS(on) ()VGS = - 10 V 0.60RoHS* For Automatic InsertionQg (Max.) (nC) 18COMPLIANT End StackableQgs (nC) 3.0Qgd (nC) 9.0 P-ChannelConfiguration Single 175 C Operating Temperature Fast Switchin
..2. Size:2028K vishay
irfd9120pbf sihfd9120.pdf 
IRFD9120, SiHFD9120Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 100Available Repetitive Avalanche RatedRDS(on) ()VGS = - 10 V 0.60RoHS* For Automatic InsertionQg (Max.) (nC) 18COMPLIANT End StackableQgs (nC) 3.0Qgd (nC) 9.0 P-ChannelConfiguration Single 175 C Operating Temperature Fast Switchin
..3. Size:1875K infineon
irfd9120 sihfd9120.pdf 
IRFD9120, SiHFD9120Vishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 100Available Repetitive Avalanche RatedRDS(on) ()VGS = - 10 V 0.60RoHS* For Automatic InsertionQg (Max.) (nC) 18COMPLIANT End StackableQgs (nC) 3.0Qgd (nC) 9.0 P-ChannelConfiguration Single 175 C Operating TemperatureS Fast Switc
7.1. Size:1639K vishay
irfd9110 sihfd9110.pdf 
IRFD9110, SiHFD9110Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 100Available Repetitive Avalanche RatedRDS(on) ()VGS = - 10 V 1.2RoHS* For Automatic InsertionQg (Max.) (nC) 8.7 COMPLIANT End StackableQgs (nC) 2.2 P-ChannelQgd (nC) 4.1 175 C Operating TemperatureConfiguration Single Fast Switchin
7.2. Size:1640K vishay
irfd9110pbf sihfd9110.pdf 
IRFD9110, SiHFD9110Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 100Available Repetitive Avalanche RatedRDS(on) ()VGS = - 10 V 1.2RoHS* For Automatic InsertionQg (Max.) (nC) 8.7 COMPLIANT End StackableQgs (nC) 2.2 P-ChannelQgd (nC) 4.1 175 C Operating TemperatureConfiguration Single Fast Switchin
8.1. Size:1751K vishay
irfd9014pbf sihfd9014.pdf 
IRFD9014, SiHFD9014Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 60 Repetitive Avalanche RatedAvailableRDS(on) ()VGS = - 10 V 0.50 For Automatic InsertionRoHS*Qg (Max.) (nC) 12COMPLIANT End StackableQgs (nC) 3.8 P-ChannelQgd (nC) 5.1 175 C Operating TemperatureConfiguration Single Fast Switchin
8.2. Size:1688K vishay
irfd9024 sihfd9024.pdf 
IRFD9024, SiHFD9024Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 60 Repetitive Avalanche RatedAvailableRDS(on) ()VGS = - 10 V 0.28 For Automatic InsertionRoHS*Qg (Max.) (nC) 19COMPLIANT End StackableQgs (nC) 5.4 P-ChannelQgd (nC) 11 Fast SwitchingConfiguration Single 175 C Operating Temperature
8.3. Size:131K vishay
irfd9010pbf sihfd9010.pdf 
IRFD9010, SiHFD9010Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY For Automatic InsertionVDS (V) - 50 Compact, End Stackable Fast SwitchingRDS(on) ()VGS = - 10 V 0.50 Low Drive CurrentQg (Max.) (nC) 11 Easy ParalleledQgs (nC) 3.8 Excellent Temperature StabilityQgd (nC) 4.1 P-Channel Versatility Compliant to RoHS Directive 2002/95/E
8.4. Size:129K vishay
sihfd9010 irfd9010.pdf 
IRFD9010, SiHFD9010Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY For Automatic InsertionVDS (V) - 50 Compact, End Stackable Fast SwitchingRDS(on) ()VGS = - 10 V 0.50 Low Drive CurrentQg (Max.) (nC) 11 Easy ParalleledQgs (nC) 3.8 Excellent Temperature StabilityQgd (nC) 4.1 P-Channel Versatility Compliant to RoHS Directive 2002/95/E
8.5. Size:1552K vishay
irfd9210 sihfd9210.pdf 
IRFD9210, SiHFD9210Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 200Available Repetitive Avalanche RatedRDS(on) ()VGS = - 10 V 3.0RoHS* For Automatic InsertionQg (Max.) (nC) 8.9 COMPLIANT End StackableQgs (nC) 2.1 P-ChannelQgd (nC) 3.9 Fast SwitchingConfiguration Single Ease of ParallelingS
8.6. Size:1750K vishay
irfd9014 sihfd9014.pdf 
IRFD9014, SiHFD9014Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 60 Repetitive Avalanche RatedAvailableRDS(on) ()VGS = - 10 V 0.50 For Automatic InsertionRoHS*Qg (Max.) (nC) 12COMPLIANT End StackableQgs (nC) 3.8 P-ChannelQgd (nC) 5.1 175 C Operating TemperatureConfiguration Single Fast Switchin
8.7. Size:1690K vishay
irfd9024pbf sihfd9024.pdf 
IRFD9024, SiHFD9024Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 60 Repetitive Avalanche RatedAvailableRDS(on) ()VGS = - 10 V 0.28 For Automatic InsertionRoHS*Qg (Max.) (nC) 19COMPLIANT End StackableQgs (nC) 5.4 P-ChannelQgd (nC) 11 Fast SwitchingConfiguration Single 175 C Operating Temperature
8.8. Size:1553K vishay
irfd9210pbf sihfd9210.pdf 
IRFD9210, SiHFD9210Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 200Available Repetitive Avalanche RatedRDS(on) ()VGS = - 10 V 3.0RoHS* For Automatic InsertionQg (Max.) (nC) 8.9 COMPLIANT End StackableQgs (nC) 2.1 P-ChannelQgd (nC) 3.9 Fast SwitchingConfiguration Single Ease of ParallelingS
8.9. Size:1675K vishay
irfd9220pbf sihfd9220.pdf 
IRFD9220, SiHFD9220www.vishay.comVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 200Available Repetitive Avalanche RatedRDS(on) ()VGS = - 10 V 1.5RoHS* For Automatic InsertionCOMPLIANTQg (Max.) (nC) 15 End StackableQgs (nC) 3.2 P-ChannelQgd (nC) 8.4 Fast SwitchingConfiguration Single Ease of Para
8.10. Size:1658K vishay
irfd9220 sihfd9220.pdf 
IRFD9220, SiHFD9220Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 200Available Repetitive Avalanche RatedRDS(on) ()VGS = - 10 V 1.5RoHS* For Automatic InsertionCOMPLIANTQg (Max.) (nC) 15 End StackableQgs (nC) 3.2 P-ChannelQgd (nC) 8.4 Fast SwitchingConfiguration Single Ease of ParallelingS
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History: AP4P052H
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