SIHFD9120 datasheet, аналоги, основные параметры
Наименование производителя: SIHFD9120
Тип транзистора: MOSFET
Полярность: P
Предельные значения
Pd ⓘ
- Максимальная рассеиваемая мощность: 1.3 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 1 A
Tj ⓘ - Максимальная температура канала: 175 °C
Электрические характеристики
tr ⓘ -
Время нарастания: 29 ns
Cossⓘ - Выходная емкость: 170 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.6 Ohm
Тип корпуса: HVMDIP
Аналог (замена) для SIHFD9120
- подборⓘ MOSFET транзистора по параметрам
SIHFD9120 даташит
..1. Size:2027K vishay
irfd9120 sihfd9120.pdf 
IRFD9120, SiHFD9120 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) - 100 Available Repetitive Avalanche Rated RDS(on) ( )VGS = - 10 V 0.60 RoHS* For Automatic Insertion Qg (Max.) (nC) 18 COMPLIANT End Stackable Qgs (nC) 3.0 Qgd (nC) 9.0 P-Channel Configuration Single 175 C Operating Temperature Fast Switchin
..2. Size:2028K vishay
irfd9120pbf sihfd9120.pdf 
IRFD9120, SiHFD9120 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) - 100 Available Repetitive Avalanche Rated RDS(on) ( )VGS = - 10 V 0.60 RoHS* For Automatic Insertion Qg (Max.) (nC) 18 COMPLIANT End Stackable Qgs (nC) 3.0 Qgd (nC) 9.0 P-Channel Configuration Single 175 C Operating Temperature Fast Switchin
..3. Size:1875K infineon
irfd9120 sihfd9120.pdf 
IRFD9120, SiHFD9120 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) - 100 Available Repetitive Avalanche Rated RDS(on) ( )VGS = - 10 V 0.60 RoHS* For Automatic Insertion Qg (Max.) (nC) 18 COMPLIANT End Stackable Qgs (nC) 3.0 Qgd (nC) 9.0 P-Channel Configuration Single 175 C Operating Temperature S Fast Switc
7.1. Size:1639K vishay
irfd9110 sihfd9110.pdf 
IRFD9110, SiHFD9110 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) - 100 Available Repetitive Avalanche Rated RDS(on) ( )VGS = - 10 V 1.2 RoHS* For Automatic Insertion Qg (Max.) (nC) 8.7 COMPLIANT End Stackable Qgs (nC) 2.2 P-Channel Qgd (nC) 4.1 175 C Operating Temperature Configuration Single Fast Switchin
7.2. Size:1640K vishay
irfd9110pbf sihfd9110.pdf 
IRFD9110, SiHFD9110 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) - 100 Available Repetitive Avalanche Rated RDS(on) ( )VGS = - 10 V 1.2 RoHS* For Automatic Insertion Qg (Max.) (nC) 8.7 COMPLIANT End Stackable Qgs (nC) 2.2 P-Channel Qgd (nC) 4.1 175 C Operating Temperature Configuration Single Fast Switchin
8.1. Size:1751K vishay
irfd9014pbf sihfd9014.pdf 
IRFD9014, SiHFD9014 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) - 60 Repetitive Avalanche Rated Available RDS(on) ( )VGS = - 10 V 0.50 For Automatic Insertion RoHS* Qg (Max.) (nC) 12 COMPLIANT End Stackable Qgs (nC) 3.8 P-Channel Qgd (nC) 5.1 175 C Operating Temperature Configuration Single Fast Switchin
8.2. Size:1688K vishay
irfd9024 sihfd9024.pdf 
IRFD9024, SiHFD9024 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) - 60 Repetitive Avalanche Rated Available RDS(on) ( )VGS = - 10 V 0.28 For Automatic Insertion RoHS* Qg (Max.) (nC) 19 COMPLIANT End Stackable Qgs (nC) 5.4 P-Channel Qgd (nC) 11 Fast Switching Configuration Single 175 C Operating Temperature
8.3. Size:131K vishay
irfd9010pbf sihfd9010.pdf 
IRFD9010, SiHFD9010 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY For Automatic Insertion VDS (V) - 50 Compact, End Stackable Fast Switching RDS(on) ( )VGS = - 10 V 0.50 Low Drive Current Qg (Max.) (nC) 11 Easy Paralleled Qgs (nC) 3.8 Excellent Temperature Stability Qgd (nC) 4.1 P-Channel Versatility Compliant to RoHS Directive 2002/95/E
8.4. Size:129K vishay
sihfd9010 irfd9010.pdf 
IRFD9010, SiHFD9010 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY For Automatic Insertion VDS (V) - 50 Compact, End Stackable Fast Switching RDS(on) ( )VGS = - 10 V 0.50 Low Drive Current Qg (Max.) (nC) 11 Easy Paralleled Qgs (nC) 3.8 Excellent Temperature Stability Qgd (nC) 4.1 P-Channel Versatility Compliant to RoHS Directive 2002/95/E
8.5. Size:1552K vishay
irfd9210 sihfd9210.pdf 
IRFD9210, SiHFD9210 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) - 200 Available Repetitive Avalanche Rated RDS(on) ( )VGS = - 10 V 3.0 RoHS* For Automatic Insertion Qg (Max.) (nC) 8.9 COMPLIANT End Stackable Qgs (nC) 2.1 P-Channel Qgd (nC) 3.9 Fast Switching Configuration Single Ease of Paralleling S
8.6. Size:1750K vishay
irfd9014 sihfd9014.pdf 
IRFD9014, SiHFD9014 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) - 60 Repetitive Avalanche Rated Available RDS(on) ( )VGS = - 10 V 0.50 For Automatic Insertion RoHS* Qg (Max.) (nC) 12 COMPLIANT End Stackable Qgs (nC) 3.8 P-Channel Qgd (nC) 5.1 175 C Operating Temperature Configuration Single Fast Switchin
8.7. Size:1690K vishay
irfd9024pbf sihfd9024.pdf 
IRFD9024, SiHFD9024 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) - 60 Repetitive Avalanche Rated Available RDS(on) ( )VGS = - 10 V 0.28 For Automatic Insertion RoHS* Qg (Max.) (nC) 19 COMPLIANT End Stackable Qgs (nC) 5.4 P-Channel Qgd (nC) 11 Fast Switching Configuration Single 175 C Operating Temperature
8.8. Size:1553K vishay
irfd9210pbf sihfd9210.pdf 
IRFD9210, SiHFD9210 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) - 200 Available Repetitive Avalanche Rated RDS(on) ( )VGS = - 10 V 3.0 RoHS* For Automatic Insertion Qg (Max.) (nC) 8.9 COMPLIANT End Stackable Qgs (nC) 2.1 P-Channel Qgd (nC) 3.9 Fast Switching Configuration Single Ease of Paralleling S
8.9. Size:1675K vishay
irfd9220pbf sihfd9220.pdf 
IRFD9220, SiHFD9220 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) - 200 Available Repetitive Avalanche Rated RDS(on) ( )VGS = - 10 V 1.5 RoHS* For Automatic Insertion COMPLIANT Qg (Max.) (nC) 15 End Stackable Qgs (nC) 3.2 P-Channel Qgd (nC) 8.4 Fast Switching Configuration Single Ease of Para
8.10. Size:1658K vishay
irfd9220 sihfd9220.pdf 
IRFD9220, SiHFD9220 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) - 200 Available Repetitive Avalanche Rated RDS(on) ( )VGS = - 10 V 1.5 RoHS* For Automatic Insertion COMPLIANT Qg (Max.) (nC) 15 End Stackable Qgs (nC) 3.2 P-Channel Qgd (nC) 8.4 Fast Switching Configuration Single Ease of Paralleling S
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