Справочник MOSFET. SIHFI720G

 

SIHFI720G MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: SIHFI720G
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 30 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 400 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 2.6 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 20 nC
   trⓘ - Время нарастания: 14 ns
   Cossⓘ - Выходная емкость: 120 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 1.8 Ohm
   Тип корпуса: TO-220FP

 Аналог (замена) для SIHFI720G

 

 

SIHFI720G Datasheet (PDF)

 ..1. Size:1499K  vishay
 irfi720g sihfi720g.pdf

SIHFI720G SIHFI720G

IRFI720G, SiHFI720GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 400 High Voltage Isolation = 2.5 kVRMS (t = 60 s;AvailableRDS(on) ()VGS = 10 V 1.8f = 60 Hz)RoHS* Sink to Lead Creepage Distance = 4.8 mmQg (Max.) (nC) 20 COMPLIANT Dynamic dV/dt RatingQgs (nC) 3.3 Low Thermal ResistanceQgd (nC) 11 Lead (Pb)-fre

 ..2. Size:1501K  vishay
 sihfi720g.pdf

SIHFI720G SIHFI720G

IRFI720G, SiHFI720GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 400 High Voltage Isolation = 2.5 kVRMS (t = 60 s;AvailableRDS(on) ()VGS = 10 V 1.8f = 60 Hz)RoHS* Sink to Lead Creepage Distance = 4.8 mmQg (Max.) (nC) 20 COMPLIANT Dynamic dV/dt RatingQgs (nC) 3.3 Low Thermal ResistanceQgd (nC) 11 Lead (Pb)-fre

 8.1. Size:1583K  vishay
 irfi740g sihfi740g.pdf

SIHFI720G SIHFI720G

IRFI740G, SiHFI740GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 400 High Voltage Isolation = 2.5 kVRMS (t = 60 s; AvailableRDS(on) ()VGS = 10 V 0.55f = 60 Hz)RoHS*Qg (Max.) (nC) 66COMPLIANT Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 10 Dynamic dV/dt RatingQgd (nC) 33 Low Thermal ResistanceConfiguration Sin

 8.2. Size:1545K  vishay
 sihfi730g.pdf

SIHFI720G SIHFI720G

IRFI730G, SiHFI730GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 400 High Voltage Isolation = 2.5 kVRMS (t = 60 s;AvailableRDS(on) ()VGS = 10 V 1.0f = 60 Hz)RoHS*Qg (Max.) (nC) 38 Sink to Lead Creepage Distance = 4.8 mmCOMPLIANTQgs (nC) 5.7 Dynamic dV/dt RatingQgd (nC) 22 Low Thermal Resistance Lead (Pb)-free

 8.3. Size:1544K  vishay
 irfi730g sihfi730g.pdf

SIHFI720G SIHFI720G

IRFI730G, SiHFI730GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 400 High Voltage Isolation = 2.5 kVRMS (t = 60 s;AvailableRDS(on) ()VGS = 10 V 1.0f = 60 Hz)RoHS*Qg (Max.) (nC) 38 Sink to Lead Creepage Distance = 4.8 mmCOMPLIANTQgs (nC) 5.7 Dynamic dV/dt RatingQgd (nC) 22 Low Thermal Resistance Lead (Pb)-free

 8.4. Size:1296K  vishay
 irfi740glc sihfi740glc.pdf

SIHFI720G SIHFI720G

IRFI740GLC, SiHFI740GLCVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Ultra Low Gate ChargeVDS (V) 400 Reduced Gate Drive RequirementAvailableRDS(on) ()VGS = 10 V 0.55 Enhanced 30 V VGS RatingRoHS* Isolated PackageQg (Max.) (nC) 39COMPLIANT High Voltage Isolation = 2.5 kVRMS (t = 60 s,Qgs (nC) 10f = 60 Hz)Qgd (nC) 19 Sink to Lead C

 8.5. Size:1741K  vishay
 irfi744g sihfi744g.pdf

SIHFI720G SIHFI720G

IRFI744G, SiHFI744GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 450Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 10 V 0.63f = 60 Hz)RoHS*COMPLIANTQg (Max.) (nC) 80 Sink to Lead Creepage Dist. = 4.8 mmQgs (nC) 12 Dynamic dV/dt RatingQgd (nC) 41 Low Thermal Resistance Lead (Pb)-free Av

 8.6. Size:1297K  vishay
 sihfi740glc.pdf

SIHFI720G SIHFI720G

IRFI740GLC, SiHFI740GLCVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Ultra Low Gate ChargeVDS (V) 400 Reduced Gate Drive RequirementAvailableRDS(on) ()VGS = 10 V 0.55 Enhanced 30 V VGS RatingRoHS* Isolated PackageQg (Max.) (nC) 39COMPLIANT High Voltage Isolation = 2.5 kVRMS (t = 60 s,Qgs (nC) 10f = 60 Hz)Qgd (nC) 19 Sink to Lead C

 8.7. Size:1600K  vishay
 sihfi740g.pdf

SIHFI720G SIHFI720G

IRFI740G, SiHFI740GVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 400Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 10 V 0.55f = 60 Hz) RoHS*Qg (Max.) (nC) 66 COMPLIANT Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 10 Dynamic dV/dt RatingQgd (nC) 33 Low Thermal ResistanceConfiguration Singl

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: AOT15S60L

 

 
Back to Top