IRL540NS - описание и поиск аналогов

PD- 95234 IRL540NS/LPbF Lead-Free www.irf.com 1 05/04/04 IRL540NS/LPbF 2 www.irf.com IRL540NS/LPbF www.irf.com 3 IRL540NS/LPbF 4 www.irf.com IRL540NS/LPbF www.irf.com 5 IRL540NS/LPbF 6 www.irf.com IRL540NS/LPbF www.irf.com 7 IRL540NS/LPbF D2Pak Package Outline Dimensions are shown in millimeters (inches) D2Pak Part Marking Information (Lead-Free) T H IS IS AN IR

PD -91535 IRL540NS/L HEXFET Power MOSFET Advanced Process Technology D Surface Mount (IRL540NS) VDSS = 100V Low-profile through-hole (IRL540NL) 175 C Operating Temperature RDS(on) = 0.044 Fast Switching G Fully Avalanche Rated ID = 36A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low

PD- 95234 IRL540NS/LPbF Lead-Free www.irf.com 1 05/04/04 IRL540NS/LPbF 2 www.irf.com IRL540NS/LPbF www.irf.com 3 IRL540NS/LPbF 4 www.irf.com IRL540NS/LPbF www.irf.com 5 IRL540NS/LPbF 6 www.irf.com IRL540NS/LPbF www.irf.com 7 IRL540NS/LPbF D2Pak Package Outline Dimensions are shown in millimeters (inches) D2Pak Part Marking Information (Lead-Free) T H IS IS AN IR

Isc N-Channel MOSFET Transistor IRL540NS FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volt

PD - 94997 IRL540NPbF HEXFET Power MOSFET Lead-Free www.irf.com 1 2/10/04 IRL540NPbF 2 www.irf.com IRL540NPbF www.irf.com 3 IRL540NPbF 4 www.irf.com IRL540NPbF www.irf.com 5 IRL540NPbF 6 www.irf.com IRL540NPbF www.irf.com 7 IRL540NPbF TO-220AB Package Outline Dimensions are shown in millimeters (inches) 10.54 (.415) - B - 3.78 (.149) 10.29 (.405) 2.87 (.113) 4

PD - 91495A IRL540N HEXFET Power MOSFET Logic-Level Gate Drive D Advanced Process Technology VDSS = 100V Dynamic dv/dt Rating 175 C Operating Temperature RDS(on) = 0.044 Fast Switching G Fully Avalanche Rated ID = 36A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per

isc N-Channel MOSFET Transistor IRL540N,IIRL540N FEATURES Low drain-source on-resistance RDS(on) 44m (max) Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION It is intended for general purpose switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SY

Isc N-Channel MOSFET Transistor IRL540NL FEATURES With To-262 package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 100