Справочник MOSFET. SIHFI9630G

 

SIHFI9630G MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: SIHFI9630G
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 35 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 200 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 4.3 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 29 nC
   trⓘ - Время нарастания: 27 ns
   Cossⓘ - Выходная емкость: 200 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.8 Ohm
   Тип корпуса: TO-220FP

 Аналог (замена) для SIHFI9630G

 

 

SIHFI9630G Datasheet (PDF)

 ..1. Size:1550K  vishay
irfi9630gpbf sihfi9630g.pdf

SIHFI9630G
SIHFI9630G

IRFI9630G, SiHFI9630GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) - 200 High Voltage Isolation = 2.5 kVRMS (t = 60 s,Availablef = 60 Hz) RDS(on) ()VGS = - 10 V 0.80RoHS* Sink to Lead Creepage Distance = 4.8 mmQg (Max.) (nC) 29 COMPLIANT P-ChannelQgs (nC) 5.4 Dynamic dV/dt RatingQgd (nC) 15 Low Thermal Resist

 ..2. Size:1549K  vishay
irfi9630g sihfi9630g.pdf

SIHFI9630G
SIHFI9630G

IRFI9630G, SiHFI9630GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) - 200 High Voltage Isolation = 2.5 kVRMS (t = 60 s,Availablef = 60 Hz) RDS(on) ()VGS = - 10 V 0.80RoHS* Sink to Lead Creepage Distance = 4.8 mmQg (Max.) (nC) 29 COMPLIANT P-ChannelQgs (nC) 5.4 Dynamic dV/dt RatingQgd (nC) 15 Low Thermal Resist

 6.1. Size:832K  vishay
irfi9634gpbf sihfi9634g.pdf

SIHFI9630G
SIHFI9630G

IRFI9634G, SiHFI9634GVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Advanced Process TechnologyVDS (V) - 250 Dynamic dV/dt RatingRDS(on) ()VGS = - 10 V 1.0 150 C Operating TemperatureQg (Max.) (nC) 38 Fast SwitchingQgs (nC) 8.0 P-ChannelQgd (nC) 18 Fully Avalanche RatedConfiguration Single Lead (Pb)-free AvailableSDESCRIPTION

 6.2. Size:831K  vishay
irfi9634g sihfi9634g.pdf

SIHFI9630G
SIHFI9630G

IRFI9634G, SiHFI9634GVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Advanced Process TechnologyVDS (V) - 250 Dynamic dV/dt RatingRDS(on) ()VGS = - 10 V 1.0 150 C Operating TemperatureQg (Max.) (nC) 38 Fast SwitchingQgs (nC) 8.0 P-ChannelQgd (nC) 18 Fully Avalanche RatedConfiguration Single Lead (Pb)-free AvailableSDESCRIPTION

 7.1. Size:1655K  vishay
irfi9640gpbf sihfi9640g.pdf

SIHFI9630G
SIHFI9630G

IRFI9640G, SiHFI9640GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) - 200 High Voltage Isolation = 2.5 kVRMS (t = 60 s;Availablef = 60 Hz)RDS(on) ()VGS = - 10 V 0.50RoHS* Sink to Lead Creepage Distance = 4.8 mmQg (Max.) (nC) 44COMPLIANT P-ChannelQgs (nC) 7.1 Dynamic dV/dt RatingQgd (nC) 27 Low Thermal Resist

 7.2. Size:814K  vishay
irfi9610g sihfi9610g.pdf

SIHFI9630G
SIHFI9630G

IRFI9610G, SiHFI9610GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) - 200 High Voltage Isolation = 2.5 kVRMS (t = 60 s;AvailableRDS(on) ()VGS = - 10 V 3.0f = 60 Hz)RoHS* Sink to Lead Creepage Distance = 4.8 mm COMPLIANTQg (Max.) (nC) 13 P-ChannelQgs (nC) 3.2 Dynamic dV/dt RatingQgd (nC) 7.3 Low Thermal Resista

 7.3. Size:1653K  vishay
irfi9640g sihfi9640g.pdf

SIHFI9630G
SIHFI9630G

IRFI9640G, SiHFI9640GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) - 200 High Voltage Isolation = 2.5 kVRMS (t = 60 s;Availablef = 60 Hz)RDS(on) ()VGS = - 10 V 0.50RoHS* Sink to Lead Creepage Distance = 4.8 mmQg (Max.) (nC) 44COMPLIANT P-ChannelQgs (nC) 7.1 Dynamic dV/dt RatingQgd (nC) 27 Low Thermal Resist

 7.4. Size:1647K  vishay
irfi9620gpbf sihfi9620g.pdf

SIHFI9630G
SIHFI9630G

IRFI9620G, SiHFI9620GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) - 200Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = - 10 V 1.5f = 60 Hz)RoHS*COMPLIANT Sink to Lead Creepage Dist. = 4.8 mmQg (Max.) (nC) 15 P-ChannelQgs (nC) 3.2 Dynamic dV/dtQgd (nC) 8.4 Low Thermal ResistanceConf

 7.5. Size:1671K  vishay
irfi9620g sihfi9620g.pdf

SIHFI9630G
SIHFI9630G

IRFI9620G, SiHFI9620GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) - 200Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = - 10 V 1.5f = 60 Hz)RoHS*COMPLIANT Sink to Lead Creepage Dist. = 4.8 mmQg (Max.) (nC) 15 P-ChannelQgs (nC) 3.2 Dynamic dV/dtQgd (nC) 8.4 Low Thermal ResistanceConf

 7.6. Size:790K  vishay
irfi9610g-pbf sihfi9610g.pdf

SIHFI9630G
SIHFI9630G

IRFI9610G, SiHFI9610GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) - 200 High Voltage Isolation = 2.5 kVRMS (t = 60 s;AvailableRDS(on) ()VGS = - 10 V 3.0f = 60 Hz)RoHS* Sink to Lead Creepage Distance = 4.8 mm COMPLIANTQg (Max.) (nC) 13 P-ChannelQgs (nC) 3.2 Dynamic dV/dt RatingQgd (nC) 7.3 Low Thermal Resista

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