IRL541 - описание и поиск аналогов

PD - 94997 IRL540NPbF HEXFET Power MOSFET Lead-Free www.irf.com 1 2/10/04 IRL540NPbF 2 www.irf.com IRL540NPbF www.irf.com 3 IRL540NPbF 4 www.irf.com IRL540NPbF www.irf.com 5 IRL540NPbF 6 www.irf.com IRL540NPbF www.irf.com 7 IRL540NPbF TO-220AB Package Outline Dimensions are shown in millimeters (inches) 10.54 (.415) - B - 3.78 (.149) 10.29 (.405) 2.87 (.113) 4

PD - 91495A IRL540N HEXFET Power MOSFET Logic-Level Gate Drive D Advanced Process Technology VDSS = 100V Dynamic dv/dt Rating 175 C Operating Temperature RDS(on) = 0.044 Fast Switching G Fully Avalanche Rated ID = 36A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per

PD - 95453 IRL540PbF Lead-Free 6/23/04 Document Number 91300 www.vishay.com 1 IRL540PbF Document Number 91300 www.vishay.com 2 IRL540PbF Document Number 91300 www.vishay.com 3 IRL540PbF Document Number 91300 www.vishay.com 4 IRL540PbF Document Number 91300 www.vishay.com 5 IRL540PbF Document Number 91300 www.vishay.com 6 IRL540PbF + Circuit Layout Consider

www.vishay.com Document Number 90386 1349 Document Number 90386 www.vishay.com 1350 Document Number 90386 www.vishay.com 1351 Document Number 90386 www.vishay.com 1352 Document Number 90386 www.vishay.com 1353 Document Number 90386 www.vishay.com 1354 Legal Disclaimer Notice Vishay Notice The products described herein were acquired by Vishay Intertechnology, Inc., as

PD- 95234 IRL540NS/LPbF Lead-Free www.irf.com 1 05/04/04 IRL540NS/LPbF 2 www.irf.com IRL540NS/LPbF www.irf.com 3 IRL540NS/LPbF 4 www.irf.com IRL540NS/LPbF www.irf.com 5 IRL540NS/LPbF 6 www.irf.com IRL540NS/LPbF www.irf.com 7 IRL540NS/LPbF D2Pak Package Outline Dimensions are shown in millimeters (inches) D2Pak Part Marking Information (Lead-Free) T H IS IS AN IR

PD -91535 IRL540NS/L HEXFET Power MOSFET Advanced Process Technology D Surface Mount (IRL540NS) VDSS = 100V Low-profile through-hole (IRL540NL) 175 C Operating Temperature RDS(on) = 0.044 Fast Switching G Fully Avalanche Rated ID = 36A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low

PD- 95234 IRL540NS/LPbF Lead-Free www.irf.com 1 05/04/04 IRL540NS/LPbF 2 www.irf.com IRL540NS/LPbF www.irf.com 3 IRL540NS/LPbF 4 www.irf.com IRL540NS/LPbF www.irf.com 5 IRL540NS/LPbF 6 www.irf.com IRL540NS/LPbF www.irf.com 7 IRL540NS/LPbF D2Pak Package Outline Dimensions are shown in millimeters (inches) D2Pak Part Marking Information (Lead-Free) T H IS IS AN IR

Advanced Power MOSFET FEATURES BVDSS = 100 V Logic-Level Gate Drive RDS(on) = 0.058 Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 28 A Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 100V Lower RDS(ON) 0.046 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Rating

IRL540S, SiHL540S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 100 Definition Surface Mount RDS(on) ( )VGS = 5 V 0.077 Available in Tape and Reel Qg (Max.) (nC) 64 Dynamic dV/dt Rating Repetitive Avalanche Rated Qgs (nC) 9.4 Logic-Level Gate Drive Qgd (nC) 27 RDS(on) Specified at VGS = 4 V

IRL540, SiHL540 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 100 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 5.0 V 0.077 RoHS* Logic-Level Gate Drive COMPLIANT Qg (Max.) (nC) 64 RDS(on) Specified at VGS = 4 V and 5 V Qgs (nC) 9.4 175 C Operating Temperature Qgd (nC) 27 Fast Switching Configuration Si

IRL540, SiHL540 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 100 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 5.0 V 0.077 RoHS* Logic-Level Gate Drive COMPLIANT Qg (Max.) (nC) 64 RDS(on) Specified at VGS = 4 V and 5 V Qgs (nC) 9.4 175 C Operating Temperature Qgd (nC) 27 Fast Switching Configuration Si

IRL540S, SiHL540S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 100 Definition Surface Mount RDS(on) ( )VGS = 5 V 0.077 Available in Tape and Reel Qg (Max.) (nC) 64 Dynamic dV/dt Rating Repetitive Avalanche Rated Qgs (nC) 9.4 Logic-Level Gate Drive Qgd (nC) 27 RDS(on) Specified at VGS = 4 V

isc N-Channel MOSFET Transistor IRL540N,IIRL540N FEATURES Low drain-source on-resistance RDS(on) 44m (max) Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION It is intended for general purpose switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SY

Isc N-Channel MOSFET Transistor IRL540NS FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volt

Isc N-Channel MOSFET Transistor IRL540NL FEATURES With To-262 package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 100