IRF7779L2TR1PBF - параметры транзистора MOSFET, его аналоги, datasheet

IRF7779L2TR1PBF Даташит. Основные параметры и характеристики. Поиск аналогов

   Наименование прибора: IRF7779L2TR1PBF
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 3.3 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 150 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 11 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 97 nC
   trⓘ - Время нарастания: 19 ns
   Cossⓘ - Выходная емкость: 840 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.011 Ohm
   Тип корпуса: DIRECTFET

Аналог (замена) для IRF7779L2TR1PBF

- подбор MOSFET транзистора по параметрам

IRF7779L2TR1PBF Datasheet (PDF)

0.1. Size:312K international rectifier
irf7779l2tr1pbf irf7779l2trpbf.pdf pdf_icon

PD - 97435IRF7779L2TRPbFIRF7779L2TR1PbFDirectFET Power MOSFET l RoHS Compliant, Halogen Free l Lead-Free (Qualified up to 260C Reflow) Typical values (unless otherwise specified)l Ideal for High Performance Isolated ConverterVDSS VGS RDS(on) Primary Switch Socket150V min 20V max 9.0m@ 10Vl Optimized for Synchronous RectificationQg tot Qgd Vgs(th) l Low Cond

5.1. Size:261K international rectifier
irf7779l2pbf.pdf pdf_icon

IRF7779L2PbFDirectFET Power MOSFET l RoHS Compliant, Halogen Free Typical values (unless otherwise specified)l Lead-Free (Qualified up to 260C Reflow)l Ideal for High Performance Isolated ConverterVDSS VGS RDS(on) Primary Switch Socket150V min 20V max 9.0m@ 10Vl Optimized for Synchronous RectificationQg tot Qgd Vgs(th) l Low Conduction Losses97nC 33nC 4.0V

9.1. Size:228K 1
irf7752g.pdf pdf_icon

PD- 96151AIRF7752GPbFHEXFET Power MOSFETl Ultra Low On-Resistancel Dual N-Channel MOSFETVDSS RDS(on) max IDl Very Small SOIC Package30V 0.030@VGS = 10V 4.6Al Low Profile (

9.2. Size:226K 1
irf7750g.pdf pdf_icon

PD-96144AIRF7750GPbFHEXFET Power MOSFETl Ultra Low On-Resistancel Dual P-Channel MOSFETl Very Small SOIC PackageVDSS = -20Vl Low Profile (

9.3. Size:311K international rectifier
irf7759l2tr1pbf irf7759l2trpbf.pdf pdf_icon

PD - 96283IRF7759L2TRPbFIRF7759L2TR1PbFDirectFET Power MOSFET l RoHS Compliant, Halogen Free Typical values (unless otherwise specified)l Lead-Free (Qualified up to 260C Reflow)l Ideal for High Performance Isolated Converter VDSS VGS RDS(on) Primary Switch Socket75V min 20V max 1.8m@ 10Vl Optimized for Synchronous RectificationQg tot Qgd Vgs(th) l Low Cond

9.4. Size:502K international rectifier
auirf7749l2tr.pdf pdf_icon

AUTOMOTIVE GRADE AUIRF7749L2TR Automotive DirectFET Power MOSFET Advanced Process Technology V(BR)DSS 60V Optimized for Automotive Motor Drive, DC-DC and RDS(on) typ. 1.1m other Heavy Load Applications Exceptionally Small Footprint and Low Profile max. 1.5m High Power Density ID (Silicon Limited) 345A Low Parasitic Parame

9.5. Size:141K international rectifier
irf7701.pdf pdf_icon

PD - 93940IRF7701HEXFET Power MOSFET Ultra Low On-ResistanceVDSS RDS(on) max ID P-Channel MOSFET0.011@VGS = -4.5V -10A Very Small SOIC Package-12V 0.015@VGS = -2.5V -8.5A Low Profile (

9.6. Size:234K international rectifier
irf7705gpbf.pdf pdf_icon

PD- 96142AIRF7705GPbFHEXFET Power MOSFETl Ultra Low On-Resistancel P-Channel MOSFETVDSS RDS(on) max (mW) IDl Very Small SOIC Package-30V 18 @VGS = -10V -8.0Al Low Profile (

9.7. Size:263K international rectifier
auirf7799l2.pdf pdf_icon

PD - 96421AUTOMOTIVE GRADEAUIRF7799L2TRAUIRF7799L2TR1Automotive DirectFET Power MOSFET Advanced Process Technology V(BR)DSS250V Optimized for Automotive Motor Drive, DC-DC andRDS(on) typ.32mother Heavy Load Applications Exceptionally Small Footprint and Low Profilemax. 38m High Power DensityID (Silicon Limited)35A Low Parasitic Parameters

9.8. Size:95K international rectifier
irf7726.pdf pdf_icon

PD -94064IRF7726HEXFET Power MOSFET Ultra Low On-ResistanceVDSS RDS(on) max ID P-Channel MOSFET -30V 0.026@VGS = -10V -7.0A Very Small SOIC Package0.040@VGS = -4.5V -6.0A Low Profile (

9.9. Size:234K international rectifier
irf7705pbf.pdf pdf_icon

PD-96022AIRF7705PbFHEXFET Power MOSFETl Ultra Low On-ResistanceVDSS RDS(on) max (mW) IDl P-Channel MOSFET-30V 18 @VGS = -10V -8.0Al Very Small SOIC Package 30 @VGS = -4.5V -6.0Al Low Profile (

9.10. Size:117K international rectifier
irf7752.pdf pdf_icon

PD -94030AIRF7752HEXFET Power MOSFET Ultra Low On-ResistanceVDSS RDS(on) max ID Dual N-Channel MOSFET30V 0.030@VGS = 10V 4.6A Very Small SOIC Package0.036@VGS = 4.5V 3.9A Low Profile (

9.11. Size:193K international rectifier
irf7704.pdf pdf_icon

PD- 94160IRF7704HEXFET Power MOSFET Ultra Low On-Resistance)VDSS RDS(on) max (m) ID))) P-Channel MOSFET-40V 46@VGS = -10V -4.6A Very Small SOIC Package74@VGS = -4.5V -3.7A Low Profile (

9.12. Size:270K international rectifier
irf7749l1.pdf pdf_icon

IRF7749L1TRPbFApplicationsDirectFET Power MOSFET l RoHS Compliant, Halogen Free Typical values (unless otherwise specified)l Lead-Free (Qualified up to 260C Reflow) VDSS VGS RDS(on) l Ideal for High Performance Isolated Converter60V min 20V max 1.1m@ 10V Primary Switch Socketl Optimized for Synchronous RectificationQg tot Qgd Vgs(th) l Low Conduction Loss

9.13. Size:146K international rectifier
irf7705.pdf pdf_icon

PD - 94001AIRF7705HEXFET Power MOSFET Ultra Low On-Resistance)VDSS RDS(on) max (m) ID))) P-Channel MOSFET-30V 18 @VGS = -10V -8.0A Very Small SOIC Package 30 @VGS = -4.5V -6.0A Low Profile (

9.14. Size:245K international rectifier
auirf7759l2.pdf pdf_icon

PD - 96426AUTOMOTIVE GRADEAUIRF7759L2TRAUIRF7759L2TR1 Advanced Process TechnologyAutomotive DirectFET Power MOSFET Optimized for Automotive Motor Drive, DC-DC andV(BR)DSS75Vother Heavy Load Applications Exceptionally Small Footprint and Low ProfileRDS(on) typ.1.8m High Power Densitymax. 2.3m Low Parasitic Parameters Dual Sided Cooling

9.15. Size:144K international rectifier
irf7754.pdf pdf_icon

PD - 94224IRF7754HEXFET Power MOSFET Ultra Low On-ResistanceVDSS RDS(on) max ID P-Channel MOSFET -12V 25m@VGS = -4.5V -5.4A Very Small SOIC Package34m@VGS = -2.5V -4.6A Low Profile (

9.16. Size:138K international rectifier
irf7702.pdf pdf_icon

PD - 93849CPROVISIONALIRF7702HEXFET Power MOSFET Ultra Low On-ResistanceVDSS RDS(on) max ID -1.8V Rated0.014@VGS = -4.5V -8.0A P-Channel MOSFET-12V 0.019@VGS = -2.5V -7.0A Very Small SOIC Package0.027@VGS = -1.8V -5.8A Low Profile (

9.17. Size:238K international rectifier
irf7756.pdf pdf_icon

PD -94159IRF7756HEXFET Power MOSFET Ultra Low On-ResistanceVDSS RDS(on) max ID Dual P-Channel MOSFET -12V 0.040@VGS = -4.5V 4.3A Very Small SOIC Package0.058@VGS = -2.5V 3.4A Low Profile (

9.18. Size:210K international rectifier
irf7703.pdf pdf_icon

PD - 94221 BIRF7703HEXFET Power MOSFETl Ultra Low On-ResistanceVDSS RDS(on) max (mW) IDl P-Channel MOSFET-40V 28@VGS = -10V -6.0Al Very Small SOIC Package45@VGS = -4.5V -4.8Al Low Profile (

9.19. Size:291K international rectifier
auirf7738l2tr.pdf pdf_icon

PD - 96333AAUIRF7738L2TRAUTOMOTIVE GRADEAUIRF7738L2TR1 Automotive DirectFET Power MOSFET V(BR)DSS 40V Advanced Process Technology Optimized for Automotive Motor Drive, DC-DC and RDS(on) typ.1.2mother Heavy Load Applicationsmax. 1.6m Exceptionally Small Footprint and Low Profile High Power Density ID (Silicon Limited)184A Low Parasitic Parame

9.20. Size:162K international rectifier
irf7751.pdf pdf_icon

PD - 94002IRF7751HEXFET Power MOSFET Ultra Low On-ResistanceVDSS RDS(on) max ID Dual P-Channel MOSFET-30V 35m@VGS = -10V -4.5A Very Small SOIC Package55m@VGS = -4.5V -3.8A Low Profile (

9.21. Size:234K international rectifier
irf7706gpbf.pdf pdf_icon

PD-96143AIRF7706GPbFHEXFET Power MOSFETl Ultra Low On-Resistancel P-Channel MOSFETVDSS RDS(on) max IDl Very Small SOIC Package -30V 22m@VGS = -10V -7.0Al Low Profile (

9.22. Size:234K international rectifier
irf7755gpbf.pdf pdf_icon

PD- 96150AIRF7755GPbFHEXFET Power MOSFETl Ultra Low On-ResistanceVDSS RDS(on) max IDl Dual P-Channel MOSFET -20V 51m@VGS = -4.5V -3.7Al Very Small SOIC Package86m@VGS = -2.5V -2.8Al Low Profile (

9.23. Size:236K international rectifier
irf7701gpbf.pdf pdf_icon

PD - 96146AIRF7701GPbFHEXFET Power MOSFETl Ultra Low On-Resistancel P-Channel MOSFET VDSS RDS(on) max IDl Very Small SOIC Package0.011@VGS = -4.5V -10Al Low Profile (

9.24. Size:128K international rectifier
irf7726pbf.pdf pdf_icon

PD -95992IRF7726PbFHEXFET Power MOSFETl Ultra Low On-Resistancel P-Channel MOSFETVDSS RDS(on) max IDl Very Small SOIC Package -30V 0.026@VGS = -10V -7.0Al Low Profile (

9.25. Size:151K international rectifier
irf7707.pdf pdf_icon

PD -93996IRF7707HEXFET Power MOSFET Ultra Low On-ResistanceVDSS RDS(on) max ID P-Channel MOSFET -20V 22m@VGS = -4.5V -7.0A Very Small SOIC Package33m@VGS = -2.5V -6.0A Low Profile (

9.26. Size:227K international rectifier
irf7702gpbf.pdf pdf_icon

PD- 96147IRF7702GPbFHEXFET Power MOSFETl Ultra Low On-ResistanceVDSS RDS(on) max IDl -1.8V Rated0.014@VGS = -4.5V -8.0Al P-Channel MOSFET-12V 0.019@VGS = -2.5V -7.0Al Very Small SOIC Package0.027@VGS = -1.8V -5.8Al Low Profile (

9.27. Size:262K international rectifier
irf7799l2pbf.pdf pdf_icon

IRF7799L2PbFDirectFET Power MOSFET l RoHS Compliant, Halogen Free Typical values (unless otherwise specified)l Lead-Free (Qualified up to 260C Reflow)VDSS VGS RDS(on) l Ideal for High Performance Isolated Converter250V min 30V max 32m@ 10V Primary Switch SocketQg tot Qgd Vgs(th) l Optimized for Synchronous Rectificationl Low Conduction Losses110nC 39nC 4.0V

9.28. Size:311K international rectifier
irf7749l2tr1pbf irf7749l2trpbf.pdf pdf_icon

PD - 97434IRF7749L2TRPbFIRF7749L2TR1PbFDirectFET Power MOSFET l RoHS Compliant, Halogen Free l Lead-Free (Qualified up to 260C Reflow) Typical values (unless otherwise specified)l Ideal for High Performance Isolated ConverterVDSS VGS RDS(on) Primary Switch Socket60V min 20V max 1.1m@ 10Vl Optimized for Synchronous RectificationQg tot Qgd Vgs(th) l Low Condu

9.29. Size:184K international rectifier
irf7702pbf.pdf pdf_icon

PD-96027IRF7702PbFHEXFET Power MOSFETl Ultra Low On-ResistanceVDSS RDS(on) max IDl -1.8V Rated0.014@VGS = -4.5V -8.0Al P-Channel MOSFET-12V 0.019@VGS = -2.5V -7.0Al Very Small SOIC Package0.027@VGS = -1.8V -5.8Al Low Profile (

9.30. Size:237K international rectifier
irf7703pbf.pdf pdf_icon

PD-96026AIRF7703PbFHEXFET Power MOSFETl Ultra Low On-ResistanceVDSS RDS(on) max (mW) IDl P-Channel MOSFET-40V 28@VGS = -10V -6.0Al Very Small SOIC Package45@VGS = -4.5V -4.8Al Low Profile (

9.31. Size:270K international rectifier
auirf7769l2.pdf pdf_icon

AUTOMOTIVE GRADEAUIRF7769L2TRAutomotive DirectFET Power MOSFET V(BR)DSS Advanced Process Technology 100V Optimized for Automotive Motor Drive, DC-DC andRDS(on) typ.2.8mother Heavy Load Applications Exceptionally Small Footprint and Low Profile max. 3.5m High Power DensityID (Silicon Limited)124A Low Parasitic ParametersQg 200nC Dual Sid

9.32. Size:235K international rectifier
irf7769l2tr1pbf irf7769l2trpbf.pdf pdf_icon

PD - 97413BIRF7769L2TRPbFIRF7769L2TR1PbFDirectFET Power MOSFET l RoHS Compliant, Halogen Free Typical values (unless otherwise specified)l Lead-Free (Qualified up to 260C Reflow)l Ideal for High Performance Isolated ConverterVDSS VGS RDS(on) Primary Switch Socket100V min 20V max 2.8m@ 10Vl Optimized for Synchronous RectificationQg tot Qgd Vgs(th) l Low Co

9.33. Size:241K international rectifier
irf7700gpbf.pdf pdf_icon

PD - 96155AIRF7700GPbFHEXFET Power MOSFETl Ultra Low On-ResistanceVDSS RDS(on) max IDl P-Channel MOSFET-20V 0.015@VGS = -4.5V -8.6Al Very Small SOIC Package0.024@VGS = -2.5V -7.3Al Low Profile (

9.34. Size:236K international rectifier
irf7754gpbf.pdf pdf_icon

PD- 96152AIRF7754GPbFHEXFET Power MOSFETl Ultra Low On-ResistanceVDSS RDS(on) max IDl P-Channel MOSFET -12V 25m@VGS = -4.5V -5.4Al Very Small SOIC Package34m@VGS = -2.5V -4.6Al Low Profile (

9.35. Size:291K international rectifier
auirf7736m2tr1.pdf pdf_icon

PD - 96316BAUIRF7736M2TRAUTOMOTIVE GRADEAUIRF7736M2TR1 Automotive DirectFET Power MOSFET Advanced Process Technology V(BR)DSS40V Optimized for Automotive Motor Drive, DC-DC andRDS(on) typ.2.5mother Heavy Load Applications Exceptionally Small Footprint and Low Profile max. 3.0m High Power DensityID (Silicon Limited)108A Low Parasitic Param

9.36. Size:292K international rectifier
auirf7737l2tr auirf7737l2tr1.pdf pdf_icon

PD - 96315CAUIRF7737L2TRAUTOMOTIVE GRADEAUIRF7737L2TR1 Automotive DirectFET Power MOSFET Advanced Process TechnologyV(BR)DSS40V Optimized for Automotive Motor Drive, DC-DC andRDS(on) typ.1.5mother Heavy Load Applications Exceptionally Small Footprint and Low Profilemax. 1.9m High Power DensityID (Silicon Limited)156A Low Parasitic Par

9.37. Size:226K international rectifier
irf7739l2.pdf pdf_icon

IRF7739L2TRPbFIRF7739L2TR1PbFDirectFET Power MOSFET l RoHS Compliant, Halogen Free Typical values (unless otherwise specified)l Lead-Free (Qualified up to 260C Reflow)l Ideal for High Performance Isolated Converter VDSS VGS RDS(on) Primary Switch Socket40V min 20V max 0.70m@ 10Vl Optimized for Synchronous RectificationQg tot Qgd Vgs(th) l Low Conduction Loss

9.38. Size:149K international rectifier
irf7700.pdf pdf_icon

PD - 93894AIRF7700HEXFET Power MOSFET Ultra Low On-ResistanceVDSS RDS(on) max ID P-Channel MOSFET-20V 0.015@VGS = -4.5V -8.6A Very Small SOIC Package0.024@VGS = -2.5V -7.3A Low Profile (

9.39. Size:261K international rectifier
irf7769l1.pdf pdf_icon

IRF7769L1TRPbFDirectFET Power MOSFET l RoHS Compliant, Halogen Free Typical values (unless otherwise specified)l Lead-Free (Qualified up to 260C Reflow) l Ideal for High Performance Isolated ConverterVDSS VGS RDS(on) Primary Switch Socket100V min 20V max 2.8m@ 10Vl Optimized for Synchronous RectificationQg tot Qgd Vgs(th) l Low Conduction Losses200nC 110

9.40. Size:237K international rectifier
irf7703gpbf.pdf pdf_icon

PD- 96148AIRF7703GPbFHEXFET Power MOSFETl Ultra Low On-Resistancel P-Channel MOSFETVDSS RDS(on) max (mW) IDl Very Small SOIC Package-40V 28@VGS = -10V -6.0Al Low Profile (

9.41. Size:236K international rectifier
irf7756gpbf.pdf pdf_icon

PD- 96153AIRF7756GPbFHEXFET Power MOSFETl Ultra Low On-ResistanceVDSS RDS(on) max IDl Dual P-Channel MOSFET -12V 0.040@VGS = -4.5V -4.3Al Very Small SOIC Package0.058@VGS = -2.5V -3.4Al Low Profile (

9.42. Size:272K international rectifier
irf7739l1.pdf pdf_icon

IRF7739L1TRPbFApplicationsDirectFET Power MOSFET Typical values (unless otherwise specified)l RoHS Compliant, Halogen Free l Lead-Free (Qualified up to 260C Reflow) VDSS VGS RDS(on) l Ideal for High Performance Isolated Converter40V min 20V max 0.70m@ 10VPrimary Switch SocketQg tot Qgd Vgs(th) l Optimized for Synchronous Rectification220nC 81nC 2.8Vl Low

9.43. Size:436K international rectifier
irf7748l1.pdf pdf_icon

IRF7748L1TRPbF DirectFET Power MOSFET Typical values (unless otherwise specified) Applications VDSS VGS RDS(on) RoHS Compliant, Halogen Free Lead-Free (Qualified up to 260C Reflow) 60V min 20V max 1.7m@ 10V Ideal for High Performance Isolated Converter Qg tot Qgd Vgs(th) Primary Switch Socket Optimized for Synchronous Recti

9.44. Size:244K international rectifier
irf7704pbf.pdf pdf_icon

PD- 96025AIRF7704PbFHEXFET Power MOSFETl Ultra Low On-ResistanceVDSS RDS(on) max (mW) IDl P-Channel MOSFET-40V 46@VGS = -10V -4.6Al Very Small SOIC Package74@VGS = -4.5V -3.7Al Low Profile (

9.45. Size:249K international rectifier
irf7755.pdf pdf_icon

PD -93995AIRF7755HEXFET Power MOSFET Ultra Low On-ResistanceVDSS RDS(on) max ID Dual P-Channel MOSFET -20V 51m@VGS = -4.5V -3.7A Very Small SOIC Package86m@VGS = -2.5V -2.8A Low Profile (

9.46. Size:246K international rectifier
auirf7732s2tr.pdf pdf_icon

AUIRF7732S2PbFAUIRF7732S2TR/TR1DirectFET Power MOSFET Advanced Process Technology Optimized for Automotive DC-DC, Motor Drive and40VV(BR)DSS other Heavy Load Applications5.5mRDS(on) typ. Exceptionally Small Footprint and Low Profile High Power Density max. 6.95m Low Parasitic Parameters55AID (Silicon Limited) Dual Sided Cooling30nCQg

9.47. Size:110K international rectifier
irf7750.pdf pdf_icon

PD - 93848AIRF7750HEXFET Power MOSFET Ultra Low On-Resistance Dual P-Channel MOSFETVDSS = -20V Very Small SOIC Package Low Profile (

9.48. Size:132K international rectifier
irf7757.pdf pdf_icon

PD - 94174IRF7757HEXFET Power MOSFET Ultra Low On-Resistance)VDSS RDS(on) max (m) ID))) Dual N-Channel MOSFET20V 35@VGS = 4.5V 4.8A Very Small SOIC Package40@VGS = 2.5V 3.8A Low Profile (

9.49. Size:269K international rectifier
irf7759l2pbf.pdf pdf_icon

IRF7759L2PbFDirectFET Power MOSFET l RoHS Compliant, Halogen Free Typical values (unless otherwise specified)l Lead-Free (Qualified up to 260C Reflow)l Ideal for High Performance Isolated Converter VDSS VGS RDS(on) Primary Switch Socket75V min 20V max 1.8m@ 10Vl Optimized for Synchronous RectificationQg tot Qgd Vgs(th) l Low Conduction Losses200nC 62nC 3.0V

9.50. Size:152K international rectifier
irf7706.pdf pdf_icon

PD -94003IRF7706HEXFET Power MOSFET Ultra Low On-ResistanceVDSS RDS(on) max ID P-Channel MOSFET -30V 22m@VGS = -10V -7.0A Very Small SOIC Package36m@VGS = -4.5V -5.6A Low Profile (

9.51. Size:290K international rectifier
auirf7737l2tr1.pdf pdf_icon

9.52. Size:238K international rectifier
irf7706pbf.pdf pdf_icon

PD-96023AIRF7706PbFHEXFET Power MOSFETl Ultra Low On-ResistanceVDSS RDS(on) max IDl P-Channel MOSFET -30V 22m@VGS = -10V -7.0Al Very Small SOIC Package36m@VGS = -4.5V -5.6Al Low Profile (

9.53. Size:308K international rectifier
auirf7739l2tr.pdf pdf_icon

PD - 97442BAUIRF7739L2TRAUTOMOTIVE GRADEAUIRF7739L2TR1Automotive DirectFET Power MOSFET FeaturesAdvanced Process Technology V(BR)DSS40VOptimized for Automotive Motor Drive, DC-DC andRDS(on) typ.700 other Heavy Load Applicationsmax. 1000Exceptionally Small Footprint and Low ProfileHigh Power DensityID (Silicon Limit

9.54. Size:245K international rectifier
irf7704gpbf.pdf pdf_icon

PD-96149IRF7704GPbFHEXFET Power MOSFETl Ultra Low On-ResistanceVDSS RDS(on) max (mW) IDl P-Channel MOSFET-40V 46@VGS = -10V -4.6Al Very Small SOIC Package74@VGS = -4.5V -3.7Al Low Profile (

9.55. Size:235K international rectifier
irf7751gpbf.pdf pdf_icon

PD - 96145AIRF7751GPbFHEXFET Power MOSFETl Ultra Low On-Resistancel Dual P-Channel MOSFETVDSS RDS(on) max IDl Very Small SOIC Package-30V 35m@VGS = -10V -4.5Al Low Profile (

9.56. Size:441K infineon
auirf7759l2tr.pdf pdf_icon

AUTOMOTIVE GRADE AUIRF7759L2TR Automotive DirectFET Power MOSFET Advanced Process Technology V(BR)DSS 75V Optimized for Automotive Motor Drive, DC-DC and other Heavy Load Applications RDS(on) typ. 1.8m Exceptionally Small Footprint and Low Profile max. 2.3m High Power Density ID (Silicon Limited) 160A Low Parasitic Parameters Qg (typi

9.57. Size:439K infineon
auirf7738l2tr.pdf pdf_icon

AUTOMOTIVE GRADE AUIRF7738L2TR Automotive DirectFET Power MOSFET Advanced Process Technology V(BR)DSS 40V Optimized for Automotive Motor Drive, DC-DC and other Heavy Load Applications RDS(on) typ. 1.2m Exceptionally Small Footprint and Low Profile max. 1.6m High Power Density ID (Silicon Limited) 184A Low Parasitic Parameters Qg (typi

9.58. Size:1111K infineon
irf7749l1trpbf.pdf pdf_icon

IRF7749L1TRPbF DirectFET N-Channel Power MOSFET IR MOSFET-DirectFET V 60V DSS IRF7749L1TRPbFR typ. DS(on) 1.1m @ V 10VGS = R max Quality Requirement Category: Industrial DS(on) 1.5m @ V = 10V GSID (Silicon Limited) 345A ID (Package Limited) 375A Applications RoHS Compliant, Halogen Free Lead-Free (Qualified up to 260

9.59. Size:442K infineon
auirf7799l2tr.pdf pdf_icon

AUTOMOTIVE GRADE AUIRF7799L2TR Automotive DirectFET Power MOSFET Advanced Process Technology V(BR)DSS 250V Optimized for Automotive Motor Drive, DC-DC and other Heavy Load Applications RDS(on) typ. 32m Exceptionally Small Footprint and Low Profile max. 38m High Power Density ID (Silicon Limited) 35A Low Parasitic Parameters Qg (typica

9.60. Size:448K infineon
auirf7769l2tr.pdf pdf_icon

AUTOMOTIVE GRADE AUIRF7769L2TR Automotive DirectFET Power MOSFET Advanced Process Technology V(BR)DSS 100V Optimized for Automotive Motor Drive, DC-DC and other Heavy Load Applications RDS(on) typ. 2.8m Exceptionally Small Footprint and Low Profile max. 3.5m High Power Density ID (Silicon Limited) 124A Low Parasitic Parameters Qg (typ

9.61. Size:432K infineon
auirf7734m2 auirf7734m2tr.pdf pdf_icon

AUTOMOTIVE GRADE AUIRF7734M2TR Automotive DirectFET Power MOSFET Advanced Process Technology V(BR)DSS 40V Optimized for Automotive Motor Drive, DC-DC and other Heavy Load Applications RDS(on) typ. 3.8m Exceptionally Small Footprint and Low Profile max. 4.9m High Power Density ID (Silicon Limited) 72A Low Parasitic Parameters Qg (typic

9.62. Size:429K infineon
auirf7732s2tr.pdf pdf_icon

AUTOMOTIVE GRADE AUIRF7732S2TR Automotive DirectFET Power MOSFET Advanced Process Technology V(BR)DSS 40V Optimized for Automotive Motor Drive, DC-DC and other Heavy Load Applications RDS(on) typ. 5.5m Exceptionally Small Footprint and Low Profile max. 6.95m High Power Density ID (Silicon Limited) 55A Low Parasitic Parameters Qg (ty

9.63. Size:439K infineon
auirf7736m2tr.pdf pdf_icon

AUTOMOTIVE GRADE AUIRF7736M2TR Automotive DirectFET Power MOSFET Advanced Process Technology V(BR)DSS 40V Optimized for Automotive Motor Drive, DC-DC and other Heavy Load Applications RDS(on) typ. 2.5m Exceptionally Small Footprint and Low Profile max. 3.0m High Power Density ID (Silicon Limited) 108A Low Parasitic Parameters Qg (typi

9.64. Size:534K infineon
auirf7739l2tr.pdf pdf_icon

AUTOMOTIVE GRADE AUIRF7739L2TR Automotive DirectFET Power MOSFET Advanced Process Technology V(BR)DSS 40V Optimized for Automotive Motor Drive, DC-DC and other Heavy Load Applications RDS(on) typ. 700 Exceptionally Small Footprint and Low Profile max. 1000 High Power Density ID (Silicon Limited) 270A Low Parasitic Parameters Qg (t

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IRF7751GTRwww.VBsemi.twDual P-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A) TrenchFET Power MOSFETs0.036 at VGS = - 10 V - 5.2- 30RoHS0.055 at VGS = - 4.5 V - 4.2COMPLIANTAPPLICATIONS Load Switch Battery SwitchS1 S2TSSOP-8G1 G2D1 1 D28S1 2 S27S1 3 S26G1 4 G25Top ViewD1 D2P-Chan

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