IRF7815PBF datasheet, подбор замены

 ..1. Size:260K  international rectifier
 irf7815pbf.pdf 

PD - 96284 IRF7815PbF HEXFET Power MOSFET Applications VDSS RDS(on) max Qg (typ.) l Synchronous MOSFET for Notebook 43m @VGS = 10V 150V 25nC Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems A A 1 8 S D Benefits 2 7 S D l Very Low RDS(on) at 10V VGS 3 6 S D l Low Gate Charge 4 5 G D l Fully Characterized Avalanche Volta

 7.1. Size:805K  cn vbsemi
 irf7815tr.pdf 

IRF7815TR www.VBsemi.tw N-Channel 150 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.080 at VGS = 10 V 5.4 Extremely Low Qgd for Switching Losses 150 23 nC 0.085 at VGS = 8 V 4.5 100 % Rg Tested 100 % Avalanche Tested Compliant to RoHS Directive 2002/95/EC D APPLICATIONS SO

 8.1. Size:126K  international rectifier
 irf7809 irf7811.pdf 

PD - 93812 PD - 93813 IRF7809/IRF7811 IRF7809/IRF7811 Provisional Datasheet N-Channel Application-Specific MOSFETs HEXFET Chipset for DC-DC Converters Ideal for CPU Core DC-DC Converters New CopperStrapTM Interconnect for Lower A A Electrical and Thermal Resistance 1 8 S D Low Conduction Losses 2 7 Low Switching Losses S D Minimizes Parallel MOSFETs fo

 8.2. Size:185K  international rectifier
 irf7811w.pdf 

PD-94031D IRF7811W HEXFET Power MOSFET for DC-DC Converters N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses A 1 8 Low Switching Losses S D 100% Tested for RG 2 7 S D 3 6 S D Description 4 5 G D This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resist

 8.3. Size:86K  international rectifier
 irf7811av.pdf 

PD-94009 IRF7811AV IRF7811AV N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses A Low Switching Losses A 1 8 S D Minimizes Parallel MOSFETs for high current applications 2 7 S D 3 6 Description S D This new device employs advanced HEXFET Power 4 5 G D MOSFET technology to achieve an unprecedented balance of

 8.4. Size:185K  international rectifier
 irf7811wpbf.pdf 

PD- 95023C IRF7811WPbF HEXFET Power MOSFET for DC-DC Converters N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses A 1 8 Low Switching Losses S D 100% Tested for Rg 2 7 S D Lead-Free 3 6 S D 4 5 G D Description This new device employs advanced HEXFET Power SO-8 Top View MOSFET technology to achieve an u

 8.5. Size:825K  cn vbsemi
 irf7811wtr.pdf 

IRF7811WTR www.VBsemi.tw N-Channel 20V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.012 at VGS = 10 V 12 20 6.1 nC Optimized for High-Side Synchronous 0.015 at VGS = 4.5 V 11 Rectifier Operation 100 % Rg Tested 100 % UIS Tested APPLICATIONS Notebook CPU Core - High-Side Switch

 8.6. Size:822K  cn vbsemi
 irf7811avtr.pdf 

IRF7811AVTR www.VBsemi.tw N-Channel 20V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.012 at VGS = 10 V 12 20 6.1 nC Optimized for High-Side Synchronous 0.015 at VGS = 4.5 V 11 Rectifier Operation 100 % Rg Tested 100 % UIS Tested APPLICATIONS Notebook CPU Core - High-Side Switch