IRF7822PBF - параметры транзистора MOSFET, его аналоги, datasheet

IRF7822PBF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

   Наименование прибора: IRF7822PBF
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 3.1 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 18 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 5.5 ns
   Cossⓘ - Выходная емкость: 1000 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0065 Ohm
   Тип корпуса: SO-8

Аналог (замена) для IRF7822PBF

IRF7822PBF Datasheet (PDF)

..1. Size:143K international rectifier
irf7822pbf.pdf

PD - 95024IRF7822PbFHEXFET Power MOSFET for DC-DC Converters N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction LossesA1 8 Low Switching LossesS D Lead-Free2 7S D3 6S DDescription4 5G DThis new device employs advanced HEXFET PowerMOSFET technology to achieve an unprecedentedbalance of on-resistance a

7.1. Size:69K international rectifier
irf7822.pdf

PD - 94279IRF7822HEXFET Power MOSFET for DC-DC Converters N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction LossesA1 8 Low Switching LossesS D2 7S DDescription 3 6S DThis new device employs advanced HEXFET Power4 5G DMOSFET technology to achieve an unprecedentedbalance of on-resistance and gate charge. The

8.1. Size:214K international rectifier
irf7820pbf.pdf

IRF7820PbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max Qg (typ.)l Synchronous MOSFET for Notebook200V 78m@VGS = 10V 29nCProcessor Powerl Synchronous Rectifier MOSFET forIsolated DC-DC Converters inNetworking Systems AA1 8S DBenefits2 7S Dl Very Low RDS(on) at 10V VGS3 6S Dl Low Gate Charge4 5G Dl Fully Characterized Avalanche Voltageand Curr

8.2. Size:255K international rectifier
irf7821pbf-1.pdf

IRF7821PbF-1HEXFET Power MOSFETAVDS 30 VA1 8S DRDS(on) max 9.1 m2 7S D(@V = 10V)GS3 6Qg (typical) 9.3 nCS DID 4 5G D13.6 A(@T = 25C)ASO-8Top ViewApplicationsl High Frequency Point-of-Load Synchronous Buck Converter for Applications in Networking &Computing Systems.Features BenefitsIndustry-standard pinout SO-8 Package Multi-Vendor Comp

8.3. Size:580K international rectifier
irf7828pbf.pdf

PD-95214AIRF7828PbFHEXFET Power MOSFET for DC-DC Converters N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction LossesA1 8 Low Switching LossesS D Lead-Free2 7S D3 6S DDescription4 5G DThis new device employs advanced HEXFET PowerMOSFET technology to achieve an unprecedentedbalance of on-resistance an

8.4. Size:206K international rectifier
irf7821.pdf

PD - 94579AIRF7821HEXFET Power MOSFETApplicationsVDSS RDS(on) max Qg(typ.)l High Frequency Point-of-Load 30V 9.1mW@VGS= 10V 9.3nCSynchronous Buck Converter forApplications in Networking &Computing Systems.AA1 8S DBenefits2 7S Dl Very Low RDS(on) at 4.5V VGS3 6S Dl Ultra-Low Gate Impedance45G Dl Fully Characterized Avalanche Voltageand Current

8.5. Size:288K international rectifier
irf7821gpbf.pdf

PD - 96248IRF7821GPbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max Qg(typ.)l High Frequency Point-of-Load 30V 9.1mW@VGS= 10V 9.3nCSynchronous Buck Converter forApplications in Networking &Computing SystemsAA1 8S DBenefits2 7S Dl Very Low RDS(on) at 4.5V VGS3 6S Dl Low Gate Charge4 5G Dl Fully Characterized Avalanche Voltageand CurrentSO-8T

8.6. Size:285K international rectifier
irf7821pbf.pdf

PD - 95213AIRF7821PbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max Qg(typ.)l High Frequency Point-of-Load 30V 9.1mW@VGS= 10V 9.3nCSynchronous Buck Converter forApplications in Networking &Computing Systems.l Lead-Free AA1 8S DBenefits2 7S Dl Very Low RDS(on) at 4.5V VGS3 6S Dl Low Gate Charge4 5G Dl Fully Characterized Avalanche Voltageand Cur

8.7. Size:479K international rectifier
irf7828.pdf

PD - 94602IRF7828HEXFET Power MOSFET for DC-DC Converters N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction LossesA1 8 Low Switching LossesS D2 7S DDescription 3 6S DThis new device employs advanced HEXFET Power4 5G DMOSFET technology to achieve an unprecedentedbalance of on-resistance and gate charge. The

8.8. Size:214K infineon
irf7820pbf.pdf