SIHFP23N50L
Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: SIHFP23N50L
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 370
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30
V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 5
V
|Id| ⓘ - Максимально
допустимый постоянный ток стока: 23
A
Tj ⓘ - Максимальная температура канала: 150
°C
Qg ⓘ -
Общий заряд затвора: 150
nC
tr ⓘ -
Время нарастания: 94
ns
Cossⓘ - Выходная емкость: 380
pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.235
Ohm
Тип корпуса:
TO-247AC
Аналог (замена) для SIHFP23N50L
-
подбор ⓘ MOSFET транзистора по параметрам
SIHFP23N50L
Datasheet (PDF)
..1. Size:188K vishay
irfp23n50l sihfp23n50l.pdf 
IRFP23N50L, SiHFP23N50LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Superfast Body Diode Eliminates the Need forVDS (V) 500External Diodes in ZVS ApplicationsAvailableRDS(on) ()VGS = 10 V 0.190 Lower Gate Charge Results in Simpler DriveRoHS*Qg (Max.) (nC) 150COMPLIANTRequirementsQgs (nC) 44 Enhanced dV/dt Capabilities Offer Improved Ruggedness
..2. Size:192K vishay
irfp23n50l irfp23n50lpbf sihfp23n50l.pdf 
IRFP23N50L, SiHFP23N50LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Superfast Body Diode Eliminates the Need forVDS (V) 500External Diodes in ZVS ApplicationsAvailableRDS(on) ()VGS = 10 V 0.190 Lower Gate Charge Results in Simpler DriveRoHS*Qg (Max.) (nC) 150COMPLIANTRequirementsQgs (nC) 44 Enhanced dV/dt Capabilities Offer Improved Ruggedness
8.1. Size:179K vishay
irfp27n60k sihfp27n60k.pdf 
IRFP27N60K, SiHFP27N60KVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 600AvailableRequirementRDS(on) ()VGS = 10 V 0.18RoHS* Improved Gate, Avalanche and Dynamic dV/dtQg (Max.) (nC) 180COMPLIANTRuggednessQgs (nC) 56 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 86and CurrentCo
8.2. Size:1459K vishay
sihfp250.pdf 
IRFP250, SiHFP250Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 200 Repetitive Avalanche Rated AvailableRDS(on) ()VGS = 10 V 0.085 Isolated Central Mounting HoleRoHS*Qg (Max.) (nC) 140COMPLIANT Fast SwitchingQgs (nC) 28 Ease of ParallelingQgd (nC) 74 Simple Drive RequirementsConfiguration Single Compli
8.3. Size:192K vishay
irfp26n60l irfp26n60lpbf sihfp26n60l.pdf 
IRFP26N60L, SiHFP26N60LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Superfast Body Diode Eliminates the Need forVDS (V) 600AvailableExternal Diodes in ZVS ApplicationsRDS(on) ()VGS = 10 V 0.21RoHS* Lower Gate Charge Results in Simpler DriveQg (Max.) (nC) 180COMPLIANTRequirementsQgs (nC) 61 Enhanced dV/dt Capabilities Offer Improved Ruggedness
8.4. Size:194K vishay
irfp21n60l irfp21n60lpbf sihfp21n60l.pdf 
IRFP21N60L, SiHFP21N60LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Superfast Body Diode Eliminates the Need forVDS (V) 600External Diodes in ZVS Applications AvailableRDS(on) ()VGS = 10 V 0.27 Lower Gate Charge Results in Simple Drive RoHS*Qg (Max.) (nC) 150COMPLIANTRequirementsQgs (nC) 46 Enhanced dV/dt Capabilities Offer Improved RuggednessQgd
8.5. Size:306K vishay
irfp22n50a sihfp22n50a.pdf 
IRFP22N50A, SiHFP22N50AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 500AvailableRequirementRDS(on) ()VGS = 10 V 0.23RoHS* Improved Gate, Avalanche and Dynamic dV/dtQg (Max.) (nC) 120 COMPLIANTRuggednessQgs (nC) 32 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 52and CurrentCon
8.6. Size:179K vishay
irfp22n60k sihfp22n60k.pdf 
IRFP22N60K, SiHFP22N60KVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 600RequirementAvailableRDS(on) ()VGS = 10 V 0.24 Improved Gate, Avalanche and Dynamic dV/dtRoHS*Qg (Max.) (nC) 150COMPLIANTRuggednessQgs (nC) 45 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 76and CurrentCo
8.7. Size:1541K vishay
irfp264 sihfp264.pdf 
IRFP264, SiHFP264Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 250Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.075RoHS* Isolated Central Mounting HoleCOMPLIANTQg (Max.) (nC) 210 Fast SwitchingQgs (nC) 35 Ease of ParallelingQgd (nC) 98 Simple Drive RequirementsConfiguration Single Compl
8.8. Size:177K vishay
irfp22n60k irfp22n60kpbf sihfp22n60k.pdf 
IRFP22N60K, SiHFP22N60KVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 600RequirementAvailableRDS(on) ()VGS = 10 V 0.24 Improved Gate, Avalanche and Dynamic dV/dtRoHS*Qg (Max.) (nC) 150COMPLIANTRuggednessQgs (nC) 45 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 76and CurrentCo
8.9. Size:155K vishay
irfp254n sihfp254n.pdf 
IRFP254N, SiHFP254NVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Advanced Process TechnologyVDS (V) 250 Dynamic dV/dt RatingAvailableRDS(on) ()VGS = 10 V 0.125 175 C Operating TemperatureRoHS*COMPLIANTQg (Max.) (nC) 100 Fully Avalanche RatedQgs (nC) 17 Fast SwitchingQgd (nC) 44 Ease of Paralleling Simple Drive RequirementsCo
8.10. Size:1596K vishay
irfp240 sihfp240.pdf 
IRFP240, SiHFP240Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 200Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.18RoHS* Isolated Central Mounting HoleCOMPLIANTQg (Max.) (nC) 70 Fast SwitchingQgs (nC) 13 Ease of ParallelingQgd (nC) 39 Simple Drive RequirementsConfiguration Single Compli
8.11. Size:1519K vishay
irfp254 sihfp254.pdf 
IRFP254, SiHFP254Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 250Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.14RoHS* Isolated Central Mounting HoleQg (Max.) (nC) 140 COMPLIANT Fast SwitchingQgs (nC) 24 Ease of ParallelingQgd (nC) 71 Simple Drive RequirementsConfiguration Single Complia
8.12. Size:1547K vishay
sihfp264.pdf 
IRFP264, SiHFP264Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 250Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.075RoHS* Isolated Central Mounting HoleCOMPLIANTQg (Max.) (nC) 210 Fast SwitchingQgs (nC) 35 Ease of ParallelingQgd (nC) 98 Simple Drive RequirementsConfiguration Single Compl
8.13. Size:1525K vishay
sihfp254.pdf 
IRFP254, SiHFP254Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 250Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.14RoHS* Isolated Central Mounting HoleQg (Max.) (nC) 140 COMPLIANT Fast SwitchingQgs (nC) 24 Ease of ParallelingQgd (nC) 71 Simple Drive RequirementsConfiguration Single Complia
8.14. Size:1603K vishay
sihfp240.pdf 
IRFP240, SiHFP240Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 200Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.18RoHS* Isolated Central Mounting HoleCOMPLIANTQg (Max.) (nC) 70 Fast SwitchingQgs (nC) 13 Ease of ParallelingQgd (nC) 39 Simple Drive RequirementsConfiguration Single Compli
8.15. Size:183K vishay
irfp27n60k irfp27n60kpbf sihfp27n60k.pdf 
IRFP27N60K, SiHFP27N60KVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 600AvailableRequirementRDS(on) ()VGS = 10 V 0.18RoHS* Improved Gate, Avalanche and Dynamic dV/dtQg (Max.) (nC) 180COMPLIANTRuggednessQgs (nC) 56 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 86and CurrentCo
8.16. Size:902K vishay
irfp244 sihfp244.pdf 
IRFP244, SiHFP244Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 250Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.28RoHS* Isolated Central Mounting HoleCOMPLIANTQg (Max.) (nC) 63 Fast SwitchingQgs (nC) 12 Simple Drive RequirementsQgd (nC) 39 Compliant to RoHS Directive 2002/95/ECConfiguration
8.17. Size:188K vishay
irfp26n60l sihfp26n60l.pdf 
IRFP26N60L, SiHFP26N60LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Superfast Body Diode Eliminates the Need forVDS (V) 600AvailableExternal Diodes in ZVS ApplicationsRDS(on) ()VGS = 10 V 0.21RoHS* Lower Gate Charge Results in Simpler DriveQg (Max.) (nC) 180COMPLIANTRequirementsQgs (nC) 61 Enhanced dV/dt Capabilities Offer Improved Ruggedness
8.18. Size:1768K vishay
sihfp260.pdf 
IRFP260, SiHFP260Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 200Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.055RoHS* Isolated Central Mounting HoleQg (Max.) (nC) 230COMPLIANT Fast SwitchingQgs (nC) 42 Ease of ParallelingQgd (nC) 110 Simple Drive RequirementsConfiguration Single Comp
8.19. Size:1762K vishay
irfp260 sihfp260.pdf 
IRFP260, SiHFP260Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 200Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.055RoHS* Isolated Central Mounting HoleQg (Max.) (nC) 230COMPLIANT Fast SwitchingQgs (nC) 42 Ease of ParallelingQgd (nC) 110 Simple Drive RequirementsConfiguration Single Comp
8.20. Size:1453K vishay
irfp250 sihfp250.pdf 
IRFP250, SiHFP250Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 200 Repetitive Avalanche Rated AvailableRDS(on) ()VGS = 10 V 0.085 Isolated Central Mounting HoleRoHS*Qg (Max.) (nC) 140COMPLIANT Fast SwitchingQgs (nC) 28 Ease of ParallelingQgd (nC) 74 Simple Drive RequirementsConfiguration Single Compli
8.21. Size:311K vishay
irfp22n50apbf sihfp22n50a.pdf 
IRFP22N50A, SiHFP22N50AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 500AvailableRequirementRDS(on) ()VGS = 10 V 0.23RoHS* Improved Gate, Avalanche and Dynamic dV/dtQg (Max.) (nC) 120 COMPLIANTRuggednessQgs (nC) 32 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 52and CurrentCon
8.22. Size:258K vishay
sihfp244.pdf 
IRFP244, SiHFP244Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 250Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.28RoHS* Isolated Central Mounting HoleCOMPLIANTQg (Max.) (nC) 63 Fast SwitchingQgs (nC) 12 Simple Drive RequirementsQgd (nC) 39 Compliant to RoHS Directive 2002/95/ECConfiguration
8.23. Size:907K infineon
irfp244 sihfp244.pdf 
IRFP244, SiHFP244Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 250Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.28RoHS* Isolated Central Mounting HoleCOMPLIANTQg (Max.) (nC) 63 Fast SwitchingQgs (nC) 12 Simple Drive RequirementsQgd (nC) 39 Compliant to RoHS Directive 2002/95/ECConfiguration
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.
History: 2SK4042
