SIHFP31N50L MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: SIHFP31N50L
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 460 W
Предельно допустимое напряжение сток-исток |Uds|: 500 V
Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
Пороговое напряжение включения |Ugs(th)|: 5 V
Максимально допустимый постоянный ток стока |Id|: 31 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 210 nC
Время нарастания (tr): 115 ns
Выходная емкость (Cd): 553 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.18 Ohm
Тип корпуса: TO-247AC
Аналог (замена) для SIHFP31N50L
SIHFP31N50L Datasheet (PDF)
irfp31n50l sihfp31n50l.pdf
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IRFP31N50L, SiHFP31N50LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Super Fast Body Diode Eliminates the Need forVDS (V) 500External Diodes in ZVS Applications AvailableRDS(on) ()VGS = 10 V 0.15RoHS* Lower Gate Charge Results in Simpler DriveQg (Max.) (nC) 210COMPLIANTRequirementsQgs (nC) 58 Enhanced dV/dt Capabilities Offer Improved Ruggedness
irfp31n50l irfp31n50lpbf sihfp31n50l.pdf
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IRFP31N50L, SiHFP31N50LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Super Fast Body Diode Eliminates the Need forVDS (V) 500External Diodes in ZVS Applications AvailableRDS(on) ()VGS = 10 V 0.15RoHS* Lower Gate Charge Results in Simpler DriveQg (Max.) (nC) 210COMPLIANTRequirementsQgs (nC) 58 Enhanced dV/dt Capabilities Offer Improved Ruggedness
sihfp350.pdf
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IRFP350, SiHFP350Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 400Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.30RoHS* Isolated Central Mounting HoleCOMPLIANTQg (Max.) (nC) 150 Fast SwitchingQgs (nC) 23 Ease of ParallelingQgd (nC) 80 Simple Drive RequirementsConfiguration Single Compli
sihfp360.pdf
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IRFP360, SiHFP360Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatedVDS (V) 400Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.20RoHS* Isolated Central Mounting HoleQg (Max.) (nC) 210COMPLIANT Fast SwitchingQgs (nC) 30 Ease of ParallelingQgd (nC) 110Configuration Single Simple Drive Requirements Complia
sihfp360lc.pdf
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IRFP360LC, SiHFP360LCVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Ultra Low Gate ChargeVDS (V) 400 Reduced Gate Drive Requirement AvailableRDS(on) ()VGS = 10 V 0.20 Enhanced 30 V VGS Rating RoHS*COMPLIANT Reduced Ciss, Coss, CrssQg (Max.) (nC) 110 Isolated Central Mounting HoleQgs (nC) 28 Dynamic dV/dt RatedQgd (nC) 45 Repetitive A
irfp32n50k irfp32n50kpbf sihfp32n50k.pdf
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IRFP32N50K, SiHFP32N50KVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 500AvailableRequirementRDS(on) ()VGS = 10 V 0.135RoHS* Improved Gate, Avalanche and Dynamic dV/dtQg (Max.) (nC) 190 COMPLIANTRuggednessQgs (nC) 59 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 84and CurrentCon
irfp32n50k sihfp32n50k.pdf
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IRFP32N50K, SiHFP32N50KVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 500AvailableRequirementRDS(on) ()VGS = 10 V 0.135RoHS* Improved Gate, Avalanche and Dynamic dV/dtQg (Max.) (nC) 190 COMPLIANTRuggednessQgs (nC) 59 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 84and CurrentCon
sihfp350lc.pdf
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IRFP350LC, SiHFP350LCVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Ultra Low Gate ChargeVDS (V) 400Available Reduced Gate Drive RequirementRDS(on) ()VGS = 10 V 0.30 Enhanced 30V VGS RatingRoHS*COMPLIANT Reduced Ciss, Coss, CrssQg (Max.) (nC) 76 Isolated Central Mounting HoleQgs (nC) 20 Dynamic dV/dt RatedQgd (nC) 37 Repetitive Av
irfp360lc sihfp360lc.pdf
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IRFP360LC, SiHFP360LCVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Ultra Low Gate ChargeVDS (V) 400 Reduced Gate Drive Requirement AvailableRDS(on) ()VGS = 10 V 0.20 Enhanced 30 V VGS Rating RoHS*COMPLIANT Reduced Ciss, Coss, CrssQg (Max.) (nC) 110 Isolated Central Mounting HoleQgs (nC) 28 Dynamic dV/dt RatedQgd (nC) 45 Repetitive A
irfp340 sihfp340.pdf
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IRFP340, SiHFP340Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 400 Repetitive Avalanche Rated AvailableRDS(on) ()VGS = 10 V 0.55 Isolated Central Mounting Hole RoHS*Qg (Max.) (nC) 62 COMPLIANT Fast SwitchingQgs (nC) 10 Ease of ParallelingQgd (nC) 30 Simple Drive RequirementsConfiguration Single Compliant
irfp350 sihfp350.pdf
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IRFP350, SiHFP350Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 400Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.30RoHS* Isolated Central Mounting HoleCOMPLIANTQg (Max.) (nC) 150 Fast SwitchingQgs (nC) 23 Ease of ParallelingQgd (nC) 80 Simple Drive RequirementsConfiguration Single Compli
irfp340pbf sihfp340.pdf
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IRFP340, SiHFP340Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 400 Repetitive Avalanche Rated AvailableRDS(on) ()VGS = 10 V 0.55 Isolated Central Mounting Hole RoHS*Qg (Max.) (nC) 62 COMPLIANT Fast SwitchingQgs (nC) 10 Ease of ParallelingQgd (nC) 30 Simple Drive RequirementsConfiguration Single Compliant
irfp350lc sihfp350lc.pdf
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IRFP350LC, SiHFP350LCVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Ultra Low Gate ChargeVDS (V) 400Available Reduced Gate Drive RequirementRDS(on) ()VGS = 10 V 0.30 Enhanced 30V VGS RatingRoHS*COMPLIANT Reduced Ciss, Coss, CrssQg (Max.) (nC) 76 Isolated Central Mounting HoleQgs (nC) 20 Dynamic dV/dt RatedQgd (nC) 37 Repetitive Av
irfp360 sihfp360.pdf
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IRFP360, SiHFP360Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatedVDS (V) 400Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.20RoHS* Isolated Central Mounting HoleQg (Max.) (nC) 210COMPLIANT Fast SwitchingQgs (nC) 30 Ease of ParallelingQgd (nC) 110Configuration Single Simple Drive Requirements Complia
irfp350 sihfp350.pdf
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IRFP350, SiHFP350Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 400Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.30RoHS* Isolated Central Mounting HoleCOMPLIANTQg (Max.) (nC) 150 Fast SwitchingQgs (nC) 23 Ease of ParallelingQgd (nC) 80 Simple Drive RequirementsConfiguration Single Compli
irfp360 sihfp360.pdf
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IRFP360, SiHFP360Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatedVDS (V) 400Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.20RoHS* Isolated Central Mounting HoleQg (Max.) (nC) 210COMPLIANT Fast SwitchingQgs (nC) 30 Ease of ParallelingQgd (nC) 110Configuration Single Simple Drive Requirements Complia
sihfp350.pdf
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isc N-Channel MOSFET Transistor SiHFP350FEATURESWith TO-247 packagingWith low gate drive requirementsEasy to drive100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 400 VDSSV Gate
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