SIHFP340 datasheet, аналоги, основные параметры
Наименование производителя: SIHFP340
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ
- Максимальная рассеиваемая мощность: 150 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 400 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 11 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ -
Время нарастания: 27 ns
Cossⓘ - Выходная емкость: 400 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.55 Ohm
Тип корпуса: TO-247AC
Аналог (замена) для SIHFP340
- подборⓘ MOSFET транзистора по параметрам
SIHFP340 даташит
..1. Size:1548K vishay
irfp340 sihfp340.pdf 
IRFP340, SiHFP340 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 400 Repetitive Avalanche Rated Available RDS(on) ( )VGS = 10 V 0.55 Isolated Central Mounting Hole RoHS* Qg (Max.) (nC) 62 COMPLIANT Fast Switching Qgs (nC) 10 Ease of Paralleling Qgd (nC) 30 Simple Drive Requirements Configuration Single Compliant
..2. Size:1554K vishay
irfp340pbf sihfp340.pdf 
IRFP340, SiHFP340 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 400 Repetitive Avalanche Rated Available RDS(on) ( )VGS = 10 V 0.55 Isolated Central Mounting Hole RoHS* Qg (Max.) (nC) 62 COMPLIANT Fast Switching Qgs (nC) 10 Ease of Paralleling Qgd (nC) 30 Simple Drive Requirements Configuration Single Compliant
8.1. Size:1580K vishay
sihfp350.pdf 
IRFP350, SiHFP350 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 400 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.30 RoHS* Isolated Central Mounting Hole COMPLIANT Qg (Max.) (nC) 150 Fast Switching Qgs (nC) 23 Ease of Paralleling Qgd (nC) 80 Simple Drive Requirements Configuration Single Compli
8.2. Size:1001K vishay
sihfp360.pdf 
IRFP360, SiHFP360 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rated VDS (V) 400 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.20 RoHS* Isolated Central Mounting Hole Qg (Max.) (nC) 210 COMPLIANT Fast Switching Qgs (nC) 30 Ease of Paralleling Qgd (nC) 110 Configuration Single Simple Drive Requirements Complia
8.3. Size:188K vishay
irfp31n50l sihfp31n50l.pdf 
IRFP31N50L, SiHFP31N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Super Fast Body Diode Eliminates the Need for VDS (V) 500 External Diodes in ZVS Applications Available RDS(on) ( )VGS = 10 V 0.15 RoHS* Lower Gate Charge Results in Simpler Drive Qg (Max.) (nC) 210 COMPLIANT Requirements Qgs (nC) 58 Enhanced dV/dt Capabilities Offer Improved Ruggedness
8.4. Size:1037K vishay
sihfp360lc.pdf 
IRFP360LC, SiHFP360LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Ultra Low Gate Charge VDS (V) 400 Reduced Gate Drive Requirement Available RDS(on) ( )VGS = 10 V 0.20 Enhanced 30 V VGS Rating RoHS* COMPLIANT Reduced Ciss, Coss, Crss Qg (Max.) (nC) 110 Isolated Central Mounting Hole Qgs (nC) 28 Dynamic dV/dt Rated Qgd (nC) 45 Repetitive A
8.5. Size:175K vishay
irfp32n50k irfp32n50kpbf sihfp32n50k.pdf 
IRFP32N50K, SiHFP32N50K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Available Requirement RDS(on) ( )VGS = 10 V 0.135 RoHS* Improved Gate, Avalanche and Dynamic dV/dt Qg (Max.) (nC) 190 COMPLIANT Ruggedness Qgs (nC) 59 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 84 and Current Con
8.6. Size:170K vishay
irfp32n50k sihfp32n50k.pdf 
IRFP32N50K, SiHFP32N50K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Available Requirement RDS(on) ( )VGS = 10 V 0.135 RoHS* Improved Gate, Avalanche and Dynamic dV/dt Qg (Max.) (nC) 190 COMPLIANT Ruggedness Qgs (nC) 59 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 84 and Current Con
8.7. Size:1307K vishay
sihfp350lc.pdf 
IRFP350LC, SiHFP350LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Ultra Low Gate Charge VDS (V) 400 Available Reduced Gate Drive Requirement RDS(on) ( )VGS = 10 V 0.30 Enhanced 30V VGS Rating RoHS* COMPLIANT Reduced Ciss, Coss, Crss Qg (Max.) (nC) 76 Isolated Central Mounting Hole Qgs (nC) 20 Dynamic dV/dt Rated Qgd (nC) 37 Repetitive Av
8.8. Size:1031K vishay
irfp360lc sihfp360lc.pdf 
IRFP360LC, SiHFP360LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Ultra Low Gate Charge VDS (V) 400 Reduced Gate Drive Requirement Available RDS(on) ( )VGS = 10 V 0.20 Enhanced 30 V VGS Rating RoHS* COMPLIANT Reduced Ciss, Coss, Crss Qg (Max.) (nC) 110 Isolated Central Mounting Hole Qgs (nC) 28 Dynamic dV/dt Rated Qgd (nC) 45 Repetitive A
8.9. Size:1574K vishay
irfp350 sihfp350.pdf 
IRFP350, SiHFP350 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 400 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.30 RoHS* Isolated Central Mounting Hole COMPLIANT Qg (Max.) (nC) 150 Fast Switching Qgs (nC) 23 Ease of Paralleling Qgd (nC) 80 Simple Drive Requirements Configuration Single Compli
8.10. Size:192K vishay
irfp31n50l irfp31n50lpbf sihfp31n50l.pdf 
IRFP31N50L, SiHFP31N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Super Fast Body Diode Eliminates the Need for VDS (V) 500 External Diodes in ZVS Applications Available RDS(on) ( )VGS = 10 V 0.15 RoHS* Lower Gate Charge Results in Simpler Drive Qg (Max.) (nC) 210 COMPLIANT Requirements Qgs (nC) 58 Enhanced dV/dt Capabilities Offer Improved Ruggedness
8.11. Size:1303K vishay
irfp350lc sihfp350lc.pdf 
IRFP350LC, SiHFP350LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Ultra Low Gate Charge VDS (V) 400 Available Reduced Gate Drive Requirement RDS(on) ( )VGS = 10 V 0.30 Enhanced 30V VGS Rating RoHS* COMPLIANT Reduced Ciss, Coss, Crss Qg (Max.) (nC) 76 Isolated Central Mounting Hole Qgs (nC) 20 Dynamic dV/dt Rated Qgd (nC) 37 Repetitive Av
8.12. Size:995K vishay
irfp360 sihfp360.pdf 
IRFP360, SiHFP360 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rated VDS (V) 400 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.20 RoHS* Isolated Central Mounting Hole Qg (Max.) (nC) 210 COMPLIANT Fast Switching Qgs (nC) 30 Ease of Paralleling Qgd (nC) 110 Configuration Single Simple Drive Requirements Complia
8.13. Size:1579K infineon
irfp350 sihfp350.pdf 
IRFP350, SiHFP350 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 400 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.30 RoHS* Isolated Central Mounting Hole COMPLIANT Qg (Max.) (nC) 150 Fast Switching Qgs (nC) 23 Ease of Paralleling Qgd (nC) 80 Simple Drive Requirements Configuration Single Compli
8.14. Size:999K infineon
irfp360 sihfp360.pdf 
IRFP360, SiHFP360 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rated VDS (V) 400 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.20 RoHS* Isolated Central Mounting Hole Qg (Max.) (nC) 210 COMPLIANT Fast Switching Qgs (nC) 30 Ease of Paralleling Qgd (nC) 110 Configuration Single Simple Drive Requirements Complia
8.15. Size:260K inchange semiconductor
sihfp350.pdf 
isc N-Channel MOSFET Transistor SiHFP350 FEATURES With TO-247 packaging With low gate drive requirements Easy to drive 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 400 V DSS V Gate
Другие IGBT... SIHFP250, SIHFP254, SIHFP260, SIHFP264, SIHFP26N60L, SIHFP27N60K, SIHFP31N50L, SIHFP32N50K, IRFP260, SIHFP350, SIHFP350LC, SIHFP360, SIHFP360LC, SIHFP440, SIHFP448, SIHFP460N, SIHFP9140
